Adjustable electrical characteristics in hybrid Si/PEDOT:PSS core/shell nanowire hetero-junctions

2017 ◽  
Vol 5 (16) ◽  
pp. 3932-3936 ◽  
Author(s):  
Wenhui Lu ◽  
Shuai Zhang ◽  
Enqi Dai ◽  
Bin Miao ◽  
Yiran Peng ◽  
...  
Keyword(s):  
Core Shell ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
P Type

Si/PEDOT:PSS core/shell nanowire hetero-junctions with adjustable electrical characteristics are reported. They exhibit an ohmic behavior ascribed to p-type Si/PEDOT:PSS, whereas n-type Si/PEDOT:PSS displays a rectifying nature.

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 377-380 ◽  
Author(s):  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Corrado Bongiorno ◽  
Salvatore di Franco ◽  
Raffaella Lo Nigro ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Electrical Characteristics ◽  
Key Factors ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission ◽  
P Type ◽  
Resistance Value

This work reports on the electrical and microstructural properties of Ti/Al/Ni contacts to p-type implanted 4H-SiC obtained by rapid thermal annealing of a metal stack of Ti (70 nm)/Al (200 nm)/Ni (50 nm). The contact characteristics were monitored at increasing value of the annealing temperature. The Ohmic behavior of the contact, with a specific contact resistance value of 2.3×10-4Ω·cm2, is obtained for an annealing at 950 °C. The structural analyses of the contact, carried out by XRD and TEM, reveal the occurrence of reactions, with the detection of the Al3Ni2and AlTi phases in the upper part of the contact and of an epitaxially oriented TiC layer at the interface. These reactions are considered the key factors in the formation of an Ohmic contact in our annealed Ti/Al/Ni system. The temperature-dependence study of the electrical characteristics reveals a predominant thermionic field emission (TFE) mechanism for the current conduction through the contact, with a barrier height of 0.56 eV.

A novel process for SiGe Core-Shell JAM Transistors Fabrication and thermal annealing effect on its electrical performance

2020 ◽  
Vol 1 (2) ◽  
Author(s):  
Ashish Kumar ◽  
Wen-Hsi Lee
Keyword(s):  
Process Condition ◽  
Subthreshold Swing ◽  
Electrical Performance ◽  
Core Shell ◽  
Electrical Characteristics ◽  
Thermal Budget ◽  
New Process ◽  
Comparable Performance ◽  
Higher Temperature ◽  
Film Annealing

 In this study, we fabricate Si/SiGe core-shell Junctionless accumulation mode (JAM)FinFET devices through a rapid and novel process with four main steps, i.e. e-beam lithography definition, sputter deposition, alloy combination annealing, and chemical solution etching. The height of Si core is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. After finishing the fabrication of devices, we widely studied the electrical characteristics of poly Si/SiGe core-shell JAM FinFET transistors from a view of different Lg and Wch. A poly-Si/SiGe core -shell JAMFETs was successfully demonstrated and it also exhibits  a superior subthreshold swing of 81mV/dec and high on/off ratio > 105 when annealing for 1hr at 600°C. The thermal diffusion process condition for this study are 1hr at 600°C and 6hr at 700°C for comparison. The annealing condition at 700oC for 6 hours shows undesired electrical characteristics against the other. Results suggests that from over thermal budget causes a plenty of Ge to precipitate against to form SiGe thin film. Annealing JAMFETs at low temperature shows outstanding Subthreshold swing and better swing condition when compared to its counterpart i.e. at higher temperature. This new process can still fabricate a comparable performance to classical planar FinFET in driving current. 

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN

2005 ◽  
Vol 20 (2) ◽  
pp. 456-463 ◽  
Author(s):  
Jiin-Long Yang ◽  
J.S. Chen ◽  
S.J. Chang
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contact ◽  
Incident Angle ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
P Type

The distribution of Au and NiO in NiO/Au ohmic contact on p-type GaN was investigated in this work. Au (5 nm) films were deposited on p-GaN substrates by magnetron sputtering. Some of the Au films were preheated in N2 ambient to agglomerate into semi-connected structure (abbreviated by agg-Au); others were not preheated and remained the continuous (abbreviated by cont-Au). A NiO film (5 nm) was deposited on both types of samples, and all samples were subsequently annealed in N2 ambient at the temperatures ranging from 100 to 500 °C. The surface morphology, phases, and cross-sectional microstructure were investigated by scanning electron microscopy, glancing incident angle x-ray diffraction, and transmission electron microscopy. I-V measurement on the contacts indicates that only the 400 °C annealed NiO/cont-Au/p-GaN sample exhibits ohmic behavior and its specific contact resistance (ρc) is 8.93 × 10−3 Ω cm2. After annealing, Au and NiO contact to GaN individually in the NiO/agg-Au/p-GaN system while the Au and NiO layers become tangled in the NiO/cont-Au/p-GaN system. As a result, the highly tangled NiO-Au structure shall be the key to achieve the ohmic behavior for NiO/cont-Au/p-GaN system.

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 684-690
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

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