scholarly journals Modification of secondary products of processing triticale into starch with a new strain of the fungus Geotrichium candidum

2020 ◽  
Vol 224 ◽  
pp. 04033
Author(s):  
V V Kolpakova ◽  
R V Ulanova ◽  
D S Kulikov
Keyword(s):  
Amino Acids ◽  
Growth Rate ◽  
High Growth ◽  
Essential Amino Acids ◽  
Culture Liquid ◽  
Geotrichum Candidum ◽  
High Growth Rate ◽  
Ribosomal Genes ◽  
Secondary Products ◽  
Efficient Separation

The aim of this work was to study the possibility of using a new strain of the fungus Geotrichum candidum for the bioconversion of serum remaining after the isolation of starch and proteins from triticale grain. The fungus strain Geotrichum candidum 977 was isolated from the steep waters of triticale grains formed during the production of starch and identified on the basis of analysis of the sequence of ribosomal genes. The strain was characterized by large cells efficient separation of biomass from the culture liquid and high growth rate. On protein-free whey, which remains after isolating proteins from steeping waters the fungus assimilated glucose, maltotriose, fructose and did not assimilate maltose. At a pH of 5.0 the growth of the fungus was not observed at a pH of 5.5 to 6.5 it was weak at a pH of 7.5 to 8.5, the productivity of the fungus increased 1.8 times and amounted to 3.00-3,15 g / 100 cm3. During growth the strain alkalized the medium from pH 5.5 to pH 8.5. The microbial-plant concentrate contained 33.3 ± 2.1% protein and 19 amino acids with a predominance of alanine, aspartic, glutamic acids, lysine, threonine and leucine. The score of essential amino acids exceeded 100% with the exception of sulfurcontaining ones (64 -72%). Thus, the possibility of using a new strain of the fungus G. Candidum 977 for the utilization of wastewater generated during the production of starch and proteins from triticale grains has been shown to obtain fodder protein concentrates.

Glucose, alpha-amino nitrogen, and amino acid exchange across the hindlimb in young double-muscled type bulls maintained at two growth rates

1996 ◽  
Vol 76 (2) ◽  
pp. 193-202 ◽  
Author(s):  
J. L. Hornick ◽  
C. Van Eenaeme ◽  
S. Gauthier ◽  
P. Baldwin ◽  
L. Istasse
Keyword(s):  
Amino Acids ◽  
Growth Rate ◽  
Blood Flow ◽  
Soybean Meal ◽  
Rapid Growth ◽  
Amino Nitrogen ◽  
Vena Cava ◽  
High Growth ◽  
Essential Amino Acids ◽  
Protein Supplementation

The effect of growth rate and protein supplementation on muscle metabolism of eight bulls from the Belgian Blue breed, double-muscled type, was investigated by the arterio-venous difference technique. A low growth (LG) group was maintained at a low growth rate over 36 d, and a rapid growth (RG) group for 28 d before receiving a fattening diet allowing for a rapid growth. At the end of the RG period the RG bulls received a supplement of protected soybean meal. Animals were fitted with an aortic ultrasonic blood flow probe and with catheters in the aorta and the vena cava. The blood flow in the hindlimbs of bulls varied greatly by time of the day but was higher in the RG group. The RG group had a higher arterio-venous difference (AVD) and uptake of alpha-amino nitrogen while AVD in essential amino acids was four times higher and uptake eight times higher. Significant higher AVD or uptake was observed in individual amino acids such as leucine, isoleucine and lysine. The supplementation with protected soybean meal had significant negative effect on the uptake of several amino acids. It was concluded that caution should be exercised when measuring punctually blood flow in muscle tissue, for example by dilution techniques. At high growth rate, the requirements for amino acids are larger than for glucose. Excess protein provides no additional benefit. Key words: Bull, hindlimb catheterism, growth rate, protected soy bean, metabolite

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shell Growth ◽  
Light Output ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Current Injection ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Plane Region

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.

High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition
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