Low activation energy field-effect transistors fabricated by bar-assisted meniscus shearing

We synthesized three asymmetric anthracene derivatives, in which 2-phvA shows a high field-effect mobility of 10 cm2 V−1 s−1. This work demonstrates the potential advantages of asymmetric structures for high-performance organic semiconductors.

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Thermal behavior characterization for MOSFETs and BJTs in hazardous locations

10.23967/j.rimni.2021.03.002 ◽

2021 ◽

Vol 37 (1) ◽

Author(s):

D. Cárdenas ◽

J. Delgado

Keyword(s):

Activation Energy ◽

Thermal Behavior ◽

Field Effect ◽

Heat Dissipation ◽

Field Effect Transistors ◽

Controlled Environment ◽

Bipolar Junction Transistors ◽

Non Linear ◽

Thermal Difference ◽

A Performance

This paper shows a numerical polynomial approach to the topic of how bipolar junction transistors (BJT) and field effect transistors (FET) can be safe or unsafe when operating in explosive atmospheres. The most used transistors have been analyzed thermographically, working in a controlled environment, to characterize their thermal behavior. The target is to prevent the transistor from creating conditions that achieve the minimum activation energy for combustible vapors, dusts, or fibers/flyings. We have brought the transistors to their nominal values, specified by working currents and voltages, and confirmed that the effect of heat dissipation in a BJT is non-linear and much greater than in a MOSFET. We have experimentally found a thermal difference of more than 200ºC of overheating of a common BJT compared to a MOSFET with similar load in fixed polarization. We found temperatures above 300ºC in BJTs operating within their nominal ranges and conditions, when the accepted “safe” temperature is not supposed to exceed 200ºC in any case. Through a performance-based analysis focused on temperature, our research suggests that equipment with BJT technologies should not be implemented in certain areas of classified locations or explosive zones; so MOSFET technologies are preferable

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GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156404002296 ◽

2004 ◽

Vol 14 (01) ◽

pp. 175-195 ◽

Cited By ~ 1

Author(s):

SERGEY L. RUMYANTSEV ◽

NEZIH PALA ◽

MICHAEL. S. SHUR ◽

MICHAEL E. LEVINSHTEIN ◽

REMIS GASKA ◽

...

Keyword(s):

Thin Films ◽

Activation Energy ◽

Field Effect ◽

Field Effect Transistors ◽

Activation Energies ◽

Barrier Layers ◽

Algan Barrier ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Local Levels

AlGaN thin films and Schottky barrier Al 0.4 Ga 0.6 N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN / GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN / InGaN / GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.

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Electric field dependent activation energy of electron transport in fullerene diodes and field effect transistors: Gill’s law

Applied Physics Letters ◽

10.1063/1.3557503 ◽

2011 ◽

Vol 98 (9) ◽

pp. 092114 ◽

Cited By ~ 32

Author(s):

A. Pivrikas ◽

Mujeeb Ullah ◽

H. Sitter ◽

N. S. Sariciftci

Keyword(s):

Activation Energy ◽

Electron Transport ◽

Electric Field ◽

Field Effect ◽

Field Effect Transistors ◽

Field Dependent

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Electrical Properties of 3C-SiC and its application to FET

MRS Proceedings ◽

10.1557/proc-97-259 ◽

1987 ◽

Vol 97 ◽

Cited By ~ 14

Author(s):

S. Yoshida ◽

K. Endo ◽

E. Sakuma ◽

S. Misawa ◽

H. Okumura ◽

...

Keyword(s):

Activation Energy ◽

Vapor Deposition ◽

Field Effect ◽

Room Temperature ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Luminescent Properties ◽

Photoluminescence Spectra ◽

Heating Up

ABSTRACTElectrical and luminescent properties of nondoped, and N-doped n-type 3C-SiC layers epitaxially grown on Si(100) by chemical vapor deposition were studied. Nondoped n-type epilayers with carrier concentration of 1×1016cm−3 and the Hall mobility of 750cm2/Vs at room temperature have the activation energy of donors, Ed=2OmeV, which is different from that of the donors in the N-doped layers. The photoluminescence spectra of nondoped layers are different from those of N-doped ones. These results suggest that the donors in the unintentionally doped n-type 3C-SiC are not due to N impurities. 45–70 % of N-donors in the N-doped epilayers are compensated.Schottky-barrier and MOS-type field-effect transistors have been fabricated from 3C-SiC. The transistor operations of MESFETs and MOSFETs were studied at elevated temperatures up to 440°C. Transconductances of 1.7mS/mm and 0.15mS/mm for MESFET and 0.8 and 0.05mS/mm for MOSFET at room temperature and 440°C, respectively, were obtained. The drain currentvoltage characteristics of both the FETs at room temperature did not change in the least after heating up to 440°C in the air.

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