scholarly journals The Bamboo Standing Stock Analysis in Karo Highland, North Sumatera - Indonesia

2021 ◽  
Vol 912 (1) ◽  
pp. 012002
Author(s):  
Samsuri ◽  
A Zaitunah ◽  
A G Ahmad ◽  
M F Ramadhan

Abstract Bamboo is a type of grass with a high growth rate and can be a substitute for wood. The bamboo container is vast in range, so it is easy to cultivate. The number and distribution of Bamboo need to know how much Bamboo is available to meet market demand. This study aims to determine the standing stock of Bamboo in Karo districts. The method used is the multistage sampling method, which is to take samples on the map and continue with sampling in the field. Research shows that the dominant types are rope bamboo rope and green bamboo. The number of clumps found was between 600 and 1,600 per hectare. The average number of stems is 1,231 stems per ha. The most number clump bamboo ranges from 20 – 30 unit/ha; the most length bamboo section is between 25 – 30 cm.

2020 ◽  
Vol 7 (1) ◽  
pp. 40
Author(s):  
Anis Zubaidah ◽  
Sri Samsundari ◽  
Yudi Arifraeka Insan

Permintaan pasar yang tinggi pada ikan manfish sangat sulit terpenuhi dikarenakan pertumbuhan ikan manfish yang lambat. Solusi untuk memperbaiki pertumbuhan ikan manfish yaitu mengetahui padat tebar yang baik untuk ikan manfish serta ditambah penerapan teknologi resirkulasi yang di harapkan pertumbuhan ikan menjadi lebih cepat. Berdasarkan permasalahan itu maka dilakukannya penelitian ini untuk melihat respon ikan terhadap pertumbuhan. Metode yang digunakan dalam penelitian ini adalah metode Rancangan Acak Lengkap. Penelitian ini menggunakan 4 perlakuan (P1 (3 ekor/L dengan 25 liter air yaitu 75 ekor/wadah), P2 (6 ekor/L dengan 25 liter air yaitu 150 ekor/wadah), P3 (9 ekor/L dengan 25 liter air yaitu 225 ekor/wadah), dan P4 (12 ekor/L dengan 25 liter air yaitu 300 ekor/wadah) yang masing-masing perlakuan diulang sebanyak 3 kali ulangan. Hasil penelitian menunjukkan bahwa nilai rerata SGR (specific growth rate) yang terbaik adalah pada pelakuan P1 dengan pelakuan 3 ekor/L dengan air 25 liter yaitu 75 ekor/wadah, dengan rerata SGR sebesar 5,12 %. Laju pertumbuhan panjang yang terbaik adalah pada pelakuan P1 dengan pelakuan 3 ekor/L dengan air 25 liter yaitu 75 ekor/wadah, dengan rerata laju pertumbuhan panjang sebesar 1,40 %. Kelangsungan hidup (survival rate) terbesar adalah pada perlakuan P1 dengan pelakuan 3 ekor/L dengan air 25 liter yaitu 75 ekor/wadah, dengan rerata kelangsungan hidup (survival rate) sebesar 86,22%. Secara statistik pada penelitian ini mendapatkan hasil berpengaruh nyata terdapat pertumbuhan dan kelulusan hidup.Kata kunci: ikan manfish; resirkulasi; petumbuhan; kelulusan hidup High market demand for manfish is challenging to fulfill due to the slow growth of manfish. The solution to improve the growth of manfish is knowing good stocking density for manfish and adding the application of recirculation technology, which is expected to accelerate fish growth. Based on these problems, this study was conducted to see the response of fish to growth. The method used in this study is a completely randomized design method. In this study, we were using four treatments (P0 (3 fish/L with 25 liters of water is 75 fish/aquarium), P1 (6 fish/L with 25 liters of water is 150 fish/aquarium), P2 (9 fish /L with 25 liters water which is 225 fish/aquarium), and P3 (12 fish/L) with 25 liters of water, i.e., 300 fish/aquarium), each of which is repeated three times. The results show that the best SGR (specific growth rate) was in the treatment P1 with the treatment of 3 fish/L with 25 liters of water, which is 75 fish/aquarium, with a mean SGR 5.12%. The best high growth rate was at P1 treatment with three fish/L treatment with 25 liters of water, which is 75 fish/aquarium, with a high growth rate 1.40%. The most significant survival rate was in treatment P1 with the treatment of 3 fish/L with 25 liters of water, which is 75 fish/aquarium, with a mean survival rate amounting 86.22%, statistically in this study getting influential results or there were growth and survival rate.Keywords: manfish; recirculation; growth; survival rate


2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.


2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.


2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  

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