scholarly journals Larger guts and faster growth in mice selected for high basal metabolic rate

2021 ◽  
Vol 17 (10) ◽  
Author(s):  
Julita Sadowska ◽  
Andrzej K. Gębczyński ◽  
Marek Konarzewski
Keyword(s):  
Growth Rate ◽  
Metabolic Rate ◽  
Basal Metabolic Rate ◽  
High Growth ◽  
Postnatal Growth ◽  
High Energy ◽  
High Growth Rate ◽  
Functional Link ◽  
Size Growth ◽  
Future Outcomes

Postnatal growth in birds and mammals is the time of highest vulnerability and relatively high energy demands and therefore shapes the organisms' future outcomes. Several different factors might impose limitations on growth in juveniles, one of them being the efficiency of the digestive process and size of the gastrointestinal tract. We tested the gut size–growth rate relationship using a unique experimental model—mice from a selection experiment designed to produce two lines with divergent levels of basal metabolic rate (BMR): the high BMR (H-BMR) and low BMR (L-BMR) line types. These lines differ with respect to not only BMR, but also correlated traits—internal organ size and food intake. Applying a cross-fostering design and a thermoregulatory burden imposed by shaving the mothers, we demonstrated that the mass of intestine strongly affected the growth rate, with the H-BMR pups having larger intestines and growing faster, and with reduced growth rate of pups of both lines nursed by shaved L-BMR mothers. Our study also provides a functional link between high growth rate of neonates and high BMR of adults, partly reflecting metabolic costs of maintenance of their guts.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

scholarly journals Influence of Adding Encapsulated Phase Change Materials in Aerial Lime Based Mortars

2013 ◽  
Vol 687 ◽  
pp. 255-261 ◽  
Author(s):  
Sandra Cunha ◽  
José Barroso Aguiar ◽  
Victor Ferreira ◽  
António Tadeu
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Renewable Energy Sources ◽  
High Growth ◽  
High Energy ◽  
High Growth Rate ◽  
Aesthetic Appearance ◽  
Hardened State ◽  
High Energy Consumption

Increasingly in a society with a high growth rate and standards of comfort, the need to minimize the currently high energy consumption by taking advantage of renewable energy sources arises. The mortars with incorporation of phase change materials (PCM) have the ability to regulate the temperature inside buildings, contributing for an increase in the level of thermal comfort and reduction of the use of heating, ventilation and air conditioning (HVAC) equipment, using only the energy supplied by the sun. However, the incorporation of PCM in mortars modifies some of its characteristics. Therefore, the main objective of this study was the characterization of mortars doped with two different phase change materials. Specific properties of different PCM, such as particle size, shape and enthalpy were studied, as well as the properties of the fresh and hardened state of these mortars. Nine different compositions were developed which were initially doped with microcapsules of PCM A and subsequently doped with microcapsules of PCM B. It was possible to observe that the incorporation of phase change materials in mortars causes differences in properties such as compressive strength, flexural strength and shrinkage. After the study of the behaviour of these mortars with the incorporation of two different phase change materials, it was possible to select the composition with a better compromise between its aesthetic appearance, physical and mechanical characteristics.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shell Growth ◽  
Light Output ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Current Injection ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Plane Region

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.

High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document