5-GHz WLAN Standards Compliant Image Reject Radio Receiver on Low-cost SiGe-CMOS Technology

2006 ◽  
Author(s):  
Domenico Zito ◽  
Bruno Neri
Keyword(s):  
Low Cost ◽  
Cmos Technology ◽  
Radio Receiver ◽  
5 Ghz

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

scholarly journals Compact Uniplanar Multi Feed Multi Band ACS Monopole Antenna Loaded With Multiple Radiating Branches for Portable Wireless Devices

2018 ◽  
Vol 7 (2) ◽  
pp. 68-75 ◽  
Author(s):  
P. N. Vummadisetty ◽  
A. Kumar
Keyword(s):  
Low Cost ◽  
Impedance Matching ◽  
Ground Plane ◽  
Wireless Devices ◽  
Research Article ◽  
Resonant Modes ◽  
Wireless Device ◽  
Printed Monopole ◽  
5 Ghz ◽  
Multi Band

This research article presents, a compact 0.19 λ x 0.32 λ size ACS fed printed monopole wideband antenna loaded with multiple radiating branches suitable for LTE2300/WiBro, 5 GHz WLAN and WiMAX applications. The proposed triple band uniplanar antenna encompasses of C shaped strip, L shaped strip, rectangular shaped strip and a lateral ground plane. All the radiating strips and ground plane are etched on the 26 × 15 m size low cost FR4 epoxy substrate. This designed geometry evoked three independent reonances at 2.3 GHz, 3.5 GHz and 5.5 GHz with precise impedance matching over each operating band. The reflection coefficient ( ) response of the presented antenna demonstrates three distinct resonant modes associated with -10 dB bandwidths are about 2.24-2.40 GHz, 3.38-3.83 GHz and 5.0-6.25 GHz respectively. From the study, it is also observed that the proposed design works perfect with microstrip as well as CPW feedings. Hence the designed Multi Feed Multi Band (MFMB) antenna can be easily deployed in to any portable wireless device that works for 2.3/3.5/ 5 GHz frequency bands.

Reconfigurable Antenna

2016 ◽  
pp. 237-263
Author(s):  
Mohamad Kamal A Rahim ◽  
Huda A. A. Majid ◽  
Mohamad Rijal Hamid
Keyword(s):  
Communication Systems ◽  
Low Cost ◽  
Wireless Systems ◽  
Reconfigurable Antennas ◽  
Effective Length ◽  
Slot Antenna ◽  
Wireless Communication Systems ◽  
Reconfigurable Antenna ◽  
5 Ghz ◽  
Narrow Bands

Reconfigurable antennas have attracted a lot of attention especially in future wireless communication systems. Superior features such as reconfigurable capability, low cost, multi-purpose functions and size miniaturization have given reconfigurable antennas advantage to be integrated into a wireless systems. In this chapter, two types of reconfigurable antennas are discussed. First, frequency reconfigurable narrowband microstrip slot antenna (FRSA) is presented. The proposed antenna is designed to operate at six reconfigurable frequency bands from 2 GHz to 5 GHz with bidirectional radiation pattern. The second antenna design is frequency reconfigurable narrowband patch-slot antenna (FRPSA) is presented. The antenna is a combination of a microstrip patch and slot antenna. Nine different narrow bands are produced by tuning the effective length of the slot. The performances of the antenna in term of simulated and measured results are presented. In conclusion, good agreement between the simulated and measured results has been attained.

scholarly journals Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 751
Author(s):  
Bart Vereecke ◽  
Els Van Besien ◽  
Deniz Sabuncuoglu Tezcan ◽  
Nick Spooren ◽  
Nicolaas Tack ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Imaging System ◽  
Low Cost ◽  
Cmos Technology ◽  
Image Sensors ◽  
Single Chip ◽  
Interference Filters ◽  
Monolithically Integrated ◽  
Recent Developments

Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec’s 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.

scholarly journals Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4663
Author(s):  
Rafel Perello-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Fluid Flow ◽  
Gas Sensing ◽  
Low Cost ◽  
Cmos Technology ◽  
Monolithically Integrated ◽  
Impact Reduction ◽  
Mems Resonators ◽  
Cmos Mems ◽  
Outstanding Result ◽  
The Impact

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure.

scholarly journals Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 444 ◽  
Author(s):  
Hao Yang ◽  
Xiaojiang Li ◽  
Guodong Wang ◽  
Jianbang Zheng
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Ion Beam ◽  
Lead Selenide ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Recombination Suppression ◽  
Mid Infrared ◽  
Physical Effects

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.

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