Effect of high-temperature solder void on heat dissipation performance of Smart Power Module

Author(s):  
Mingjing Zhai ◽  
Mengjie Guo
2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.


2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.


2021 ◽  
Author(s):  
Daisuke Hiroe ◽  
Kazuki Nakamura ◽  
Kotaro Sato ◽  
Kakida Masaki ◽  
Takanori Sugita ◽  
...  

2018 ◽  
Vol 86 (12) ◽  
pp. 107-112
Author(s):  
Fumiki Kato ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kenichi Koui ◽  
Kinuyo Watanabe ◽  
...  

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.


2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.


2007 ◽  
Vol 4 (3) ◽  
pp. 105-111 ◽  
Author(s):  
S. Pillalamarri ◽  
R. Puligadda ◽  
C. Brubaker ◽  
M. Wimplinger ◽  
S. Pargfrieder

Wafer thinning has been effectively used to improve heat dissipation in power devices and to fabricate flexible substrates, small chip packages, and multiple chips in a package. Wafer handling has become an important issue due to the tendency of thinned wafers to warp and fold. Thinned wafers need to be supported during the backgrinding process, lithography, deposition, etc. Temporary wafer bonding using removable adhesives provides a feasible route to wafer thinning. Existing adhesives meet only a partial list of performance requirements. They do not meet the requirements of high-temperature stability combined with ease of removal. This paper reports on the development of a wide range of temporary adhesives to be used in wafer thinning applications that use both novel and conventional bonding and debonding methods. We have developed a series of novel removable high-temperature spin-on adhesives with excellent bonding properties and a wide range of operating temperatures for bonding and/or debonding to achieve a better processing window.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000312-000317
Author(s):  
Adam Morgan ◽  
Xin Zhao ◽  
Jason Rouse ◽  
Douglas Hopkins

Abstract One of the most important advantages of wide-bandgap (WBG) devices is high operating temperature (>200°C). Power modules have been recognized as an enabling technology for many industries, such as automotive, deep-well drilling, and on-engine aircraft controls. These applications are all required to operate under some form of extreme environmental conditions. Silicone gels are the most popular solution for the encapsulation of power modules due to mechanical stress relief enabled by a low Young's modulus, electrical isolation achieved due to high dielectric strength, and a dense material structure that protects encapsulated devices against moisture, chemicals, contaminants, etc. Currently, investigations are focused on development of silicone gels with long-term high-temperature operational capability. The target is to elevate the temperature beyond 200°C to bolster adoption of power modules in the aforementioned applications. WACKER has developed silicone gels with ultra-high purity levels of < 2ppm of total residual ions combined with > 200°C thermal stability. In this work, leakage currents through a group of WACKER Chemie encapsulant silicone gels (A, B, C) are measured and compared for an array of test modules after exposure to a 12kV voltage sweep at room temperature up to 275°C, and thermal aging at 150°C for up to more than 700 hours. High temperature encapsulants capable of producing leakage currents less than 1μA, are deemed acceptable at the given applied blocking voltage and thermal aging soak temperature. To fully characterize the high temperature encapsulants, silicone gel A, B, and C, an entire high temperature module is used as a common test vehicle. The power module test vehicle includes: 12mil/40mil/12mil Direct Bonded Copper (DBC) substrates, gel under test (GUT), power and Kelvin connected measurement terminals, thermistor thermal sensor to sense real-time temperature, and 12mil Al bonding wires to manage localized high E-Fields around wires. It was ultimately observed that silicone gels B and C were capable of maintaining low leakage current capabilities under 12kV and 275°C conditions, and thus present themselves as strong candidates for high-temperature WBG device power modules and packaging.


2015 ◽  
Vol 2015 (1) ◽  
pp. 000644-000648
Author(s):  
Mary Liu ◽  
Wusheng Yin

Solder joint encapsulant adhesives have been successfully used to enhance the strength of solder joints and improve thermal cycling as well as drop performance in finished products. The use of solder joint encapsulant adhesives can eliminate the need for underfill materials and the underfill process altogether, thus simplifying rework, which results in a lower cost of ownership. Solder joint encapsulant adhesives include: low temperature and high temperature solder joint encapsulant adhesives, and their derivatives. Each solder joint encapsulant adhesive has: unfilled and filled solder joint encapsulant adhesives, and solder joint encapsulant paste. Each solder joint encapsulant product has been designed for different applications. In this paper, we are going to discuss the details and future of solder joint encapsulant adhesives.


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