scholarly journals DeepScaleTool : A Tool for the Accurate Estimation of Technology Scaling in the Deep-Submicron Era

Author(s):  
Satyabrata Sarangi ◽  
Bevan Baas
Author(s):  
Daniel Mueller-Gritschneder ◽  
Eric Cheng ◽  
Uzair Sharif ◽  
Veit Kleeberger ◽  
Pradip Bose ◽  
...  

AbstractDriven by technology scaling, integrated systems become more susceptible to various causes of random hardware faults such as radiation-induced soft errors. Such soft errors may cause malfunction of the system due to corruption of data or control flow, which may lead to unacceptable risks for life or property in safety-critical applications. Hence, safety-critical systems deploy protection techniques such as hardening and redundancy at different layers of the system stack (circuit, logic, architecture, OS/schedule, compiler, software, algorithm) to improve resiliency against soft errors. Here, cross-layer resilience techniques aim at finding lower cost solutions by providing accurate estimation of soft error resilience combined with a systematic exploration of protection techniques that work collaboratively across the system stack. This chapter demonstrates how to apply the cross-layer resilience principle on custom processors, fixed-hardware processors, accelerators, and SRAM memories (with a focus on soft errors) and presents key insights obtained.


2004 ◽  
Vol 48 (7) ◽  
pp. 1101-1109 ◽  
Author(s):  
K.W. Chew ◽  
K.S. Yeo ◽  
S.-F. Chu

1990 ◽  
Vol 182 ◽  
Author(s):  
Catherine Y. Wong ◽  
Tak H. Ning

AbstractPolysilicon is a key material widely used in MOSFET, bipolar, and BICMOS devices. As these technologies evolve into the deep submicron regime, several issues emerge in the applications of polysilicon that must be addressed. In sub-0.5µm MOSFET, fabrication and reliability of n + poly for NMOS and p + poly for PMOS should be studied. In bipolar technology, scaling limits of polysilicon emitter must be investigated. Understanding polysilicon, both in terms of its basic material and process characteristics and its characteristics in specific integrated process and/or integrated device structures, is definitely required in order to realize the full potential of ULSI technologies.


2014 ◽  
Vol 23 (10) ◽  
pp. 1450140
Author(s):  
DIMITRIS BEKIARIS ◽  
SOTIRIOS XYDIS ◽  
GEORGE ECONOMAKOS

In the era of deep submicron integration, digital design complexity is increasing with rates that are hard to follow. On one hand, market demand for newer, faster and reliable applications never stops. On the other hand, fabrication technology can not cover this demand with frequency increase and dimension shrinking only, as it has been done in the past. Reconfigurable computing is a new design paradigm that takes advantage of idle components or shared functionality between different algorithms, to maximize utilization and improve performance, based on efficient circuit switching interconnections. However, dense and fast switching interconnections bring power dissipation problems, which are more clear in the deep submicron domain. This paper, presents a systematic design methodology, handling performance, area and both dynamic and static power reduction optimizations in the ASIC domain, for a class of reconfigurable arithmetic components, which can be used as IPs in register-transfer level (RTL) and above RTL synthesis methodologies (electronic system level — ESL, high-level synthesis — HLS, IP-based). Both operand bitwidth and technology scaling are explored, showing that the overall proposed architecture offers clear advantages as device dimensions shrink.


VLSI Design ◽  
2011 ◽  
Vol 2011 ◽  
pp. 1-19 ◽  
Author(s):  
Subhra Dhar ◽  
Manisha Pattanaik ◽  
Poolla Rajaram

In recent years, the demand for power sensitive designs has grown significantly due to the fast growth of battery-operated portable applications. As the technology scaling continues unabated, subthreshold device design has gained a lot of attention due to the low-power and ultra-low-power consumption in various applications. Design of low-power high-performance submicron and deep submicron CMOS devices and circuits is a big challenge. Short-channel effect is a major challenge for scaling the gate length down and below 0.1 μm. Detailed review and potential solutions for prolonging CMOS as the leading information technology proposed by various researchers in the past two decades are presented in this paper. This paper attempts to categorize the challenges and solutions for low-power and low-voltage application and thus provides a roadmap for device designers working in the submicron and deep submicron region of CMOS devices separately.


Author(s):  
W. R. Schucany ◽  
G. H. Kelsoe ◽  
V. F. Allison

Accurate estimation of the size of spheroid organelles from thin sectioned material is often necessary, as uniquely homogenous populations of organelles such as vessicles, granules, or nuclei often are critically important in the morphological identification of similar cell types. However, the difficulty in obtaining accurate diameter measurements of thin sectioned organelles is well known. This difficulty is due to the extreme tenuity of the sectioned material as compared to the size of the intact organelle. In populations where low variance is suspected the traditional method of diameter estimation has been to measure literally hundreds of profiles and to describe the “largest” as representative of the “approximate maximal diameter”.


Author(s):  
Virginie Crollen ◽  
Julie Castronovo ◽  
Xavier Seron

Over the last 30 years, numerical estimation has been largely studied. Recently, Castronovo and Seron (2007) proposed the bi-directional mapping hypothesis in order to account for the finding that dependent on the type of estimation task (perception vs. production of numerosities), reverse patterns of performance are found (i.e., under- and over-estimation, respectively). Here, we further investigated this hypothesis by submitting adult participants to three types of numerical estimation task: (1) a perception task, in which participants had to estimate the numerosity of a non-symbolic collection; (2) a production task, in which participants had to approximately produce the numerosity of a symbolic numerical input; and (3) a reproduction task, in which participants had to reproduce the numerosity of a non-symbolic numerical input. Our results gave further support to the finding that different patterns of performance are found according to the type of estimation task: (1) under-estimation in the perception task; (2) over-estimation in the production task; and (3) accurate estimation in the reproduction task. Moreover, correlation analyses revealed that the more a participant under-estimated in the perception task, the more he/she over-estimated in the production task. We discussed these empirical data by showing how they can be accounted by the bi-directional mapping hypothesis ( Castronovo & Seron, 2007 ).


1969 ◽  
Vol 62 (4_Suppla) ◽  
pp. S23-S35
Author(s):  
B.-A. Lamberg ◽  
O. P. Heinonen ◽  
K. Liewendahl ◽  
G. Kvist ◽  
M. Viherkoski ◽  
...  

ABSTRACT The distributions of 13 variables based on 10 laboratory tests measuring thyroid function were studied in euthyroid controls and in patients with toxic diffuse or toxic multinodular goitre. Density functions were fitted to the empirical data and the goodness of fit was evaluated by the use of the χ2-test. In a few instances there was a significant difference but the material available was in some respects too small to allow a very accurate estimation. The normal limits for each variable was defined by the 2.5 and 97.5 percentiles. It appears that in some instances these limits are too rigorous from the practical point of view. It is emphasized that the crossing point of the functions for euthyroid controls and hyperthyroid patients may be a better limit to use. In a preliminary analysis of the diagnostic efficiency the variables of total or free hormone concentration in the blood proved clearily superior to all other variables.


Author(s):  
Sweta Pendyala ◽  
Dave Albert ◽  
Katherine Hawkins ◽  
Michael Tenney

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.


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