SiC MOSFETs Gate Driver With Minimum Propagation Delay Time and Auxiliary Power Supply With Wide Input Voltage Range for High-Temperature Applications

Author(s):  
Zhiliang Zhang ◽  
Kaiqi Yao ◽  
Guangjie Ke ◽  
Ke Zhang ◽  
Zhesi Gao ◽  
...  
2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000207-000213
Author(s):  
B. M. McCue ◽  
R. L. Greenwell ◽  
M. I. Laurence ◽  
B. J. Blalock ◽  
S. K. Islam ◽  
...  

Developments in automotive (particularly hybrid-electric vehicles), aerospace, and energy production industries have led to expanding research interest in integrated circuit (IC) design toward high-temperature applications. A high-voltage, high-temperature silicon-on-insulator (SOI) process allows for circuit design to expand into these extreme environment applications. Nearly all electronic devices require a reliable supply voltage capable of operating under various supply voltages and load currents. These supply voltages and load currents can be either DC or time-varying signals. In this work, a stable supply voltage for embedded circuits is generated on chip via a voltage regulator producing a stable 5-V output voltage. Although applications of this voltage regulator are not limited to gate driver circuits, this regulator has been developed to meet the demands of a gate driver IC. The voltage regulator must be able to provide reliable output voltage over an input range from 10 V to 30 V, a temperature range of −25°C to 200°C, and output loads from 0 mA to 200 mA. Additionally, low power stand-by operation is provided to help reduce heat generation resulting in lower operating junction temperature. The designed voltage regulator has been successfully tested from −50°C to 200°C while demonstrating an output voltage variation of less than 10 mV under the full range of input voltage. Additionally, line regulation tests from 10 V to 30 V show a 12-ppm/V supply sensitivity. Full temperature and input voltage range tests reveal that the no-load supply current draw is within 17 mA while still providing in excess of 200-mA load current upon demand. Modifications to the existing design or off-chip biasing can widen the range of attainable output voltages and drive capabilities.


2005 ◽  
Vol 18 (3) ◽  
pp. 505-514
Author(s):  
Dusanka Bundalo ◽  
Branimir Ðordjevic ◽  
Zlatko Bundalo

Principles and possibilities of synthesis and design of quaternary multiple valued regenerative CMOS logic circuits with high-impedance output state are de- scribed and proposed in the paper. Two principles of synthesis and implementation of CMOS regenerative quaternary multiple-valued logic circuits with high-impedance output state are proposed and described: the simple circuits with smaller number of transistors, and the buffer/driver circuits with decreased propagation delay time. The schemes of such logic circuits are given and analyzed by computer simulations. Some of computer simulation results confirming descriptions and conclusions are also given in the paper.


2021 ◽  
Author(s):  
Ritchinder R. S. Samrai

This project is concerned with the application of the ZigBee communication standard for implementing a temperature measurement system. Due to ZigBee's low-power and low data rate features, it is ideal for analog sensor systems. Digi's ZigBee devices called XBee are used in this project. The XBee devices meet all the ZigBee standard. The XBee device has the advantage of being programmed with API firmware (application programming interface). XBee's API provides fast and reliable communication between the remote stations and the base station. The remote station has three different modules: power supply, temperature sensor and XBee device. The power supply is designed to output 3.3V. The temperature sensor is designed so that the output stays within the XBee's maximum analog input voltage range of 0V to 1.2V. The XBee device is programmed as a router. The base station has three different modules: Arduino microcontroller, LCD display and XBee device. The Arduino is programmed to receive the analog readings from the XBee device and convert them into temperature readings The temperature readings are displayed on the LCD display. The XBee device is programmed as a coordinator. The design successfully worked for 3 remote stations and 1 base station.


2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000118-000121
Author(s):  
ZiHao Zhang ◽  
Jebreel M. Salem ◽  
Dong Sam Ha

Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications using commercial-off-the-shelf (COTS) 4H-SiC transistors. The proposed voltage reference adopts Widlar bandgap reference topology, and it aims to provide a negative reference voltage for Gallium Nitride (GaN) circuits operating at high temperatures. Measurement results indicate that the proposed circuit provides a negative reference voltage with a low temperature coefficient of 42 ppm/°C for temperatures ranging from 25 °C to 250 °C. The proposed circuit also operates reliably for a wide supply voltage range of −7.5 V to −15 V for the temperature range.


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