Single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance using auxiliary bootstrapped charge pumper

2002 ◽  
Author(s):  
R.L. Lin ◽  
F.C. Lee
Keyword(s):  
Duty Cycle ◽  
Power Supply ◽  
Operation Performance ◽  
Turn On ◽  
High Side ◽  
Gate Driver ◽  
Single Power

Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000206-000213
Author(s):  
David Gras ◽  
Christophe Pautrel ◽  
Amir Fanaei ◽  
Gregory Thepaut ◽  
Maxime Chabert ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Power Supply ◽  
High Efficiency ◽  
High Reliability ◽  
System Level ◽  
Switching Frequency ◽  
Solder Paste ◽  
High Side ◽  
Gate Driver

In this paper we present a highly integrated, high-temperature isolated, half-bridge power gate driver demo board, based on turnkey X-REL chipset: XTR26010 (High-Temperature Intelligent Gate Driver), XTR40010 (High-Temperature Isolated Two Channel Transceiver), XTR30010 (High-Temperature PWM Controller), and XTR2N0825 (High-Temperature 80V N-Channel Power MOSFET). The XTR26010 is the key circuit in this chipset for power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. Furthermore, the XTR26010 circuit implements an unprecedented functionality for high-temperature drivers allowing safe operation at system level by preventing any cross-conduction between high-side and low-side switches, through isolated communication between high-side and low-side drivers. The XTR40010 is used for isolated data communication between a microcontroller or a PWM controller with the power driver (XTR26010). For supplying the half-bridge gate driver, a compact isolated flyback power supply has been developed thanks to the versatile voltage mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system has been successfully tested while driving different brands of SiC MOSFETs up to Ta=200°C, 600kHz of switching frequency and 600V high-voltage bus (limited by isolation transformers used). The demo board presented can be easily modified to drive other SiC and GaN transistors available in the market. The 200°C limitation of the demo board is due to passives, PCB material, and the solder paste used. However, all X-REL active circuits have been qualified within specifications well above 230°C.

scholarly journals Prototipe Power Supply Gate driver untuk Multilevel Inverter dengan Menggunakan Flyback Converter Multi Output

2020 ◽  
Vol 19 (01) ◽  
pp. 33-42
Author(s):  
Novie Ayub Windarko ◽  
Akhmad Puryanto ◽  
Rachma Prilian Eviningsih ◽  
Moh. Zaenal Efendi ◽  
Eka Prasetyono ◽  
...  
Keyword(s):  
Power Supply ◽  
Multilevel Inverter ◽  
Flyback Converter ◽  
Turn On ◽  
Gate Driver ◽  
Multi Level ◽  
Switching Devices

Dengan perkembangan konverter elektronika daya, kebutuhan untuk memperkecil ukuran dan keandalan semakin meningkat. Dengan meningkatnya frekuensi switching pada konverter, maka dv/dt yang tinggi dapat menyebabkan kesalahan dalam turn-on ataupun turn-off switching devices. Masalah-masalah tersebut dapat diatasi dengan menerapkan tegangan bias negatif untuk melakukan turn-off switching devices. Makalah ini mengusulkan prototipe power supply gate driver yang dikhususkan untuk Multi Level Inverter (MLI). Sebuah prototipe power supply gate driver yang menggunakan satu unit konverter flyback dengan multi output untuk tegangan bias positif dan negatif, serta terisolasi galvanis sebanyak switching devices MLI. Dengan menggunakan topologi dasar flyback maka konverter ini memiliki isolasi galvanis melalui trafo frekuensi tinggi. Dari hasil eksperimen proses switching bisa berubah dari kondisi dari on menuju off dan dari off menuju on bisa berjalan secara sempurna.

scholarly journals A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2449
Author(s):  
Hongyan Zhao ◽  
Jiangui Chen ◽  
Yan Li ◽  
Fei Lin
Keyword(s):  
Thermal Conductivity ◽  
Breakdown Voltage ◽  
Basic Principle ◽  
Double Pulse ◽  
Experimental Results ◽  
Switching Frequency ◽  
Turn On ◽  
Proof Testing ◽  
Gate Driver ◽  
Drive Circuit

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

scholarly journals Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET

2021 ◽  
Vol 11 (5) ◽  
pp. 2210
Author(s):  
Bartosz Lasek ◽  
Przemysław Trochimiuk ◽  
Rafał Kopacz ◽  
Jacek Rąbkowski
Keyword(s):  
Gate Voltage ◽  
Drain Current ◽  
Theoretical Background ◽  
Dissipated Energy ◽  
Feedback Signal ◽  
Power Losses ◽  
Turn On ◽  
Speed Up ◽  
Gate Driver ◽  
The Right

This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is necessary as the gate current should be reduced during the rise of the drain current to avoid overshoots and oscillations. The gate voltage is switched at the right moments on the basis of the feedback signal provided from a measurement of the voltage across the parasitic source inductance of the module. This approach simplifies the circuit and provides no additional power losses in the measuring circuit. The paper contains the theoretical background and detailed description of the active gate driver design. The model of the parasitic-based active gate driver was verified using the double-pulse procedure both in Saber simulations and laboratory experiments. The active gate driver decreases the turn-on energy of a 1.7 kV/325 A SiC MOSFET by 7% comparing to a conventional gate driver (VDS = 900 V, ID = 270 A, RG = 20 Ω). Furthermore, the proposed active gate driver lowered the turn-on cycle time from 478 to 390 ns without any serious oscillations in the main circuit.

A Novel High Power Factor Soft-Switching Converter

2012 ◽  
Vol 433-440 ◽  
pp. 5549-5555
Author(s):  
Yun Tao Yue ◽  
Yan Lin
Keyword(s):  
Power Factor ◽  
High Power ◽  
Power Supply ◽  
High Efficiency ◽  
Soft Switching ◽  
Switching Converter ◽  
Turn On ◽  
High Power Factor ◽  
Power Factor Corrector ◽  
Zero Voltage

A novel scheme of low power communication power supply with high power factor and soft-switching is presented, a power factor corrector and dc/dc converter of passive lossless soft-switching is based on a ML4803 IC control. DC/DC converter introduces a novel two-transistor forward soft-switching technique, which realizes zero-voltage turn-on and turn-off, with no additional switches. a communication power supply module is developed in this paper. It has the characteristics of rapid dynamic response, high power factor, high efficiency and small bulk ect.

scholarly journals A special high-frequency soft-switched DC/DC power supply for GCT gate driver

2021 ◽  
Author(s):  
Jahangir Afsharian
Keyword(s):  
Power Supply ◽  
High Frequency ◽  
Optimization Procedure ◽  
Power Supplies ◽  
Zero Voltage Switching ◽  
General Power ◽  
Gate Driver ◽  
Isolation Transformer ◽  
Experimental Use ◽  
Gate Drivers

This thesis is devoted to the development of a novel parallel isolated power supply (PIPS) for the gate driver of integrated Gate Commutated Thyristors (GCT). The proposed PIPS is essentially a special high frequency soft switched DC/DC converter, integrating six parallel isolated power supplies in one module where each power supply generates a regulated dc supply for the GCT gate driver. In commercial GCT power supplies, a high-voltage isolation transformer is indispensable but highly inefficient in terms of cost and size, which can be significantly improved by the optimized transformer. In all, this design strives to achieve a general power supply for powering up the gate drivers of all types of GCT devices in all MV applications with minimal changes in configuration. In this thesis, the configuration of PIPS is presented and its operating principle is elaborated. The transformer optimization procedure satisfying the voltage isolation requirement of GCT gate drivers is extensively discussed. The performance of PIPS, including the front end DC/DC converter, zero voltage switching phase-shift full bridge (ZVS-PS-FB) converter, and the optimization of the transformer, is verified by simulations and experiments where a 360W laboratory prototype is built for the experimental use.

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