Characterization and Benchmarking of the Low Intertier Thermal Resistance of Three-Dimensional Hybrid Cu/Dielectric Wafer-to-Wafer Bonding

2017 ◽  
Vol 139 (1) ◽  
Author(s):  
Herman Oprins ◽  
Vladimir Cherman ◽  
Tomas Webers ◽  
Abdellah Salahouelhadj ◽  
Soon-Wook Kim ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Wafer Bonding ◽  
Three Dimensional ◽  
Measurement Data ◽  
Thermal Characterization ◽  
Test Chip ◽  
Thermal Test ◽  
Wafer Pair ◽  
Transient Measurement

In this paper, we present the design of a passive test chip with thermal test structures in the Metal 1 layer of the back-end of line (BEOL) for the experimental thermal characterization of the intertier thermal resistance of wafer-pairs fabricated by three-dimensional (3D) hybrid Cu/dielectric wafer-to-wafer (W2W) bonding. The thermal test structures include heater elements and temperature sensors. The steady-state or transient measurement data are combined with a modeling study to extract the thermal resistance of the bonded interface for the fabricated bonded wafer pair. The extracted thermal resistance of the die–die interface created by hybrid wafer-to-wafer bonding is compared to literature data for die-to-die (D2D) or die-to-wafer (D2W) stacking with microbumps. The low thermal resistance of the thin bonded dielectric interface indicates that hybrid Cu/dielectric bonding is a promising technology to create 3D chip stacks with a low thermal die-to-die resistance.

A Scalable Multi-Functional Thermal Test Chip Family: Design and Evaluation

2001 ◽  
Vol 123 (4) ◽  
pp. 323-330 ◽  
Author(s):  
Zs. Benedek ◽  
B. Courtois ◽  
G. Farkas ◽  
E. Kolla´r ◽  
S. Mir ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Thermal Characterization ◽  
Thermal Engineering ◽  
Test Chip ◽  
Basic Cell ◽  
Thermal Test ◽  
Wide Range ◽  
The Family ◽  
Test Chips

Nowadays, thermal characterization of IC packages and packaging technologies is becoming a key task in thermal engineering. To support this by measurements, we developed a family of thermal test chips that allow a wide range of possible applications. Our chips are based on the same basic cell that is mainly covered by dissipating resistors and also contains a temperature sensor. These basic cells are organized into arrays of different size. The arrays are designed such that further “super arrays” can also be built for tiling up larger package cavities. The first members of the family, TMC9 and TMC81, have been manufactured. Our measurements show that the goals aimed at the design have been achieved.

Thermal characterization of ABS-Graphene blended three dimensional printed functional prototypes for electro chemical energy storage

2018 ◽  
Vol 1 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Kamaljit Singh Boparai ◽  
Rupinder Singh
Keyword(s):  
Energy Storage ◽  
Structural Changes ◽  
Fused Deposition Modeling ◽  
Morphological Changes ◽  
Three Dimensional ◽  
Thermal Characterization ◽  
Chemical Energy ◽  
Flow Index ◽  
Fused Deposition

This study highlights the thermal characterization of ABS-Graphene blended three dimensional (3D) printed functional prototypes by fused deposition modeling (FDM) process. These functional prototypes have some applications as electro-chemical energy storage devices (EESD). Initially, the suitability of ABS-Graphene composite material for FDM applications has been examined by melt flow index (MFI) test. After establishing MFI, the feedstock filament for FDM has been prepared by an extrusion process. The fabricated filament has been used for printing 3D functional prototypes for printing of in-house EESD. The differential scanning calorimeter (DSC) analysis was conducted to understand the effect on glass transition temperature with the inclusion of Graphene (Gr) particles. It has been observed that the reinforced Gr particles act as a thermal reservoir (sink) and enhances its thermal/electrical conductivity. Also, FT-IR spectra realized the structural changes with the inclusion of Gr in ABS matrix. The results are supported by scanning electron microscopy (SEM) based micrographs for understanding the morphological changes.

scholarly journals Synthesis, Spectral, Structural and Thermal Characterization of Inorganic Crystal: Phenyl Trimethylammonium Tetrachlorocobaltate

2019 ◽  
Vol 31 (8) ◽  
pp. 1779-1784
Author(s):  
V. Mohanraj ◽  
R. Pavithra ◽  
M. Thenmozhi ◽  
R. Umarani
Keyword(s):  
Three Dimensional ◽  
Thermal Characterization ◽  
Dimensional Structure ◽  
X Ray Diffraction ◽  
Monoclinic Crystal ◽  
Evaporation Technique ◽  
Ft Ir ◽  
Thermal Stability Of ◽  
Ft Ir Spectroscopy

Phenyl trimethylammonium tetrachlorocobaltate, crystals were grown by slow evaporation technique. The crystal was bright, transparent. The three dimensional structure of the phenyl trimethylammonium tetrachlorocobaltate was obtained from single crystal X-ray diffraction studies. The molecule belongs to monoclinic crystal system with C2/c space group. The presence of functional groups and modes of vibrations were identified by FT-IR spectroscopy. 1H NMR spectroscopy was also used to characterise the compound and the thermal stability of the crystal was established by TGA/DT analysis. This work undergoes phase transition which makes the study interesting.

Flip Chip Thermal Test Vehicle Design: Requirements, Evaluations, and Validations

2003 ◽  
Author(s):  
Teck Joo Goh ◽  
Chia-Pin Chiu ◽  
K. N. Seetharamu ◽  
G. A. Quadir ◽  
Z. A. Zainal
Keyword(s):  
Flip Chip ◽  
Printed Circuit Board ◽  
Thermal Characterization ◽  
Circuit Board ◽  
Vehicle Design ◽  
Test Chip ◽  
Test Vehicle ◽  
Design Processes ◽  
Thermal Test ◽  
Design Requirements

This paper reviews the design of a flip chip thermal test vehicle. Design requirements for different applications such as thermal characterization, assembly process optimization, and product burn-in simulation are outlined. The design processes of different thermal test chip structures including the temperature sensor and passive heaters are described in detail. In addition, the design of fireball heater, a novel test chip structure used for evaluating the effectiveness of heat spreading of advanced thermal solutions, is also illustrated. The design considerations and processes of the package substrate and printed circuit board with special emphasis on the physical routing of the thermal test chip structures are described. These design processes are supported with thermal data from various finite-element analyses (FEA) carried out to evaluate the capability and limitations of thermal test vehicle design. Design optimization as the outcome of these analyses is also elaborated. Lastly, the validation and calibration procedures of the thermal test vehicle are presented in this paper.

scholarly journals Thermal Characterization of Low-Dimensional Materials by Resistance Thermometers

Materials ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 1740 ◽  
Author(s):  
Yifeng Fu ◽  
Guofeng Cui ◽  
Kjell Jeppson
Keyword(s):  
Thermal Performance ◽  
Three Dimensional ◽  
Thermal Characterization ◽  
Resistance Thermometer ◽  
Light Emitting ◽  
Resistance Thermometers ◽  
Low Dimensional ◽  
Low Dimensional Materials ◽  
Boron Nitride Films

The design, fabrication, and use of a hotspot-producing and temperature-sensing resistance thermometer for evaluating the thermal properties of low-dimensional materials are described in this paper. The materials that are characterized include one-dimensional (1D) carbon nanotubes, and two-dimensional (2D) graphene and boron nitride films. The excellent thermal performance of these materials shows great potential for cooling electronic devices and systems such as in three-dimensional (3D) integrated chip-stacks, power amplifiers, and light-emitting diodes. The thermometers are designed to be serpentine-shaped platinum resistors serving both as hotspots and temperature sensors. By using these thermometers, the thermal performance of the abovementioned emerging low-dimensional materials was evaluated with high accuracy.

Thermal Characterization of Two Opposing Carbon Nanotube Arrays Using Diffraction-Limited Infrared Microscopy

2005 ◽  
Author(s):  
Xuejiao Hu ◽  
Matt Panzer ◽  
Kenneth E. Goodson
Keyword(s):  
Thermal Resistance ◽  
Contact Region ◽  
Thermal Characterization ◽  
Interface Structure ◽  
Infrared Microscopy ◽  
Carbon Nanotube Arrays ◽  
Cnt Arrays ◽  
Significant Temperature ◽  
Resistance Value

Due to their extremely high thermal conductivity, carbon nanotubes (CNTs) have received many research interests for thermal management applications. An advanced thermal interface structure made by two opposing, partially over-lapped CNT arrays is designed for thermally connecting two contact surfaces. The performance of this interface structure is thermally characterized using diffraction-limited infrared microscopy. Significant temperature discontinuities are found at the end of the CNT-CNT contact region, which indicates a large thermal resistance between CNTs. Due to this inter-tube resistance, the thermal performance of the CNT-based interface structure is far below expectation, with a thermal resistance value of about 3.8 × 10−4 K·m2/W. Possible mechanisms of heat transfer between CNTs, which result in the large inter-tube resistance, are discussed.

200. mm Silicon Wafer-to-Wafer Bonding with Thin Ti Layer under BEOL-Compatible Process Conditions

2004 ◽  
Vol 843 ◽  
Author(s):  
J. Yu ◽  
J. J. McMahon ◽  
J.-Q. Lu ◽  
R. J. Gutmann
Keyword(s):  
Wafer Bonding ◽  
Three Dimensional ◽  
Complete Removal ◽  
External Pressure ◽  
Reduced Form ◽  
Process Conditions ◽  
Manufacturing Cost ◽  
Wafer Level ◽  
Integrity Test ◽  
Wafer Pair

ABSTRACTWafer level monolithic three-dimensional (3D) integration is an emerging technology to realize enhanced performance and functionality with reduced form-factor and manufacturing cost. The cornerstone for this 3D processing technology is full-wafer bonding under back-end-of-the-line (BEOL) compatible process conditions. For the first time to our knowledge, we demonstrate nearly void-free 200 mm wafer-to-wafer bonding with an ultra-thin Ti adhesive coating, annealed at BEOL-compatible temperature (400 °C) in vacuum with external pressure applied. Mechanical integrity test showed that bonded wafer pair survived after a stringent three-step thinning process (grinding/polishing/wet-etching) with complete removal of top Si wafer, while allowing optical inspection of bonding interface. Mechanisms contributing to the strong bonding at Ti/Si interface are briefly discussed.

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