Prognostic Health Monitoring of Damage Progression in Leadfree Electronics Under Sequential Exposure to Thermal Aging and Thermal Cycling
Deployed electronic systems may be subjected to cyclic thermo-mechanical loads during storage and subsequent to deployment. Aging has been previously shown to affect the reliability and constitutive behavior of second-level leadfree interconnects. Prognostication of accrued damage and assessment of residual life is extremely critical for ultra-high reliability systems in which the cost of failure is too high. The presented methodology uses leading indicators of failure based on micro-structural evolution of damage to identify impending failure in electronic systems subjected to sequential stresses of thermal aging and thermal cycling. The methodology has been demonstrated on area-array ball-grid array test assemblies with Sn3Ag0.5Cu interconnects subjected to thermal aging at 125°C and thermal cycling from −55 to 125°C for various lengths of time and cycles. Damage equivalency methodologies have been developed to map damage accrued in thermal aging to the reduction in thermo-mechanical cyclic life based on damage proxies. Prognostic metrics including α-λ metric, sample standard deviation, mean square error, mean absolute percentage error, average bias, relative accuracy, and cumulative relative accuracy have been used to compare the performance of the damage proxies.