CHEMICAL-VAPOR-DEPOSITING (CVD) ALUMINIUM FILM ON STEEL SURFACE WITH THE DISPROPORTIONATION REACTION OF Al2S

2011 ◽  
Author(s):  
GUOYUAN WU ◽  
YONGNIAN DAI
Keyword(s):  
Steel Surface ◽  
Chemical Vapor ◽  
Disproportionation Reaction ◽  
Aluminium Film

scholarly journals Зависимость механических и трибологических свойств a-C : H : SiO-=SUB=-x-=/SUB=--пленок от амплитуды напряжения смещения подложки

2021 ◽  
Vol 91 (8) ◽  
pp. 1286
Author(s):  
А.С. Гренадеров ◽  
А.А. Соловьёв ◽  
К.В. Оскомов ◽  
М.О. Жульков
Keyword(s):  
Bias Voltage ◽  
Steel Surface ◽  
Chemical Vapor ◽  
Stainless Steel Surface ◽  
Aisi 316L ◽  
Substrate Bias Voltage ◽  
Mechanical And Tribological Properties ◽  
316L Steel ◽  
The Coefficient Of Friction ◽  
Pin On Disk

The paper presents the AISI 316L stainless steel surface modification by plasma-assisted chemical vapor deposition of a-C:H:SiOx film using the pulsed bipolar substrate bias voltage. The mechanical and tribological properties of the a-C:H:SiOx film and the steel surface are examined using the nanoindentation method and the pin-on-disk tribometer, respectively. The optimum value is obtained for the amplitude of the negative pulse of the bipolar bias voltage, when the hardness of the a-C:H:SiOx film is high (19±2 GPa). This hardness value is 3.5 times greater, than the hardness of the AISI 316L steel surface (5.5±0.1 GPa). At the same time, the coefficient of friction of the film is low (0.08), which is 9 times lower than that of the steel (0.72). The wear rate values are found to be 8.5×10-7 and 3.7×10-5 mm3N-1m-1 for the coated and uncoated steel, respectively. The structure and composition of the obtained films are studied by Raman spectroscopy and scanning electron microscopy.

scholarly journals Effect of Temperature on Anti-Corrosive Properties of Diamond-Like Carbon Coating on S355 Steel

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1659
Author(s):  
Mieczyslaw Scendo ◽  
Katarzyna Staszewska-Samson
Keyword(s):  
Heat Treatment ◽  
Corrosion Test ◽  
Carbon Coating ◽  
Steel Surface ◽  
Steel Substrate ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Diamond Like Carbon ◽  
Corrosive Environment ◽  
Dlc Coating

Influence of temperature on the anti-corrosive properties of a diamond-like carbon (DLC) coating, produced using plasma-enhanced chemical vapor deposition (PECVD) on the S355 steel substrate (S355/DLC), was investigated. Corrosion test of the materials were carried out using the electrochemical method. The corrosive environment was an alkaline solution of sodium chloride. The heat treatment of the materials was carried out in air atmosphere, at 400 and 800 °C. It was demonstrated that the DLC coating effectively protected the S355 steel surface from coming into contact with an aggressive corrosive environment. It was found, based on a corrosion test after a heat treatment at 400 °C, that the anti-corrosive properties of the DLC coating did not undergo significant changes. Due to the changes in the surface structure of S355/DLC, the microhardness (HV) of the DLC layer increased. However, after a heat treatment at 800 °C, the carbon coating on the S355 steel surface was destroyed and, thus, lost its protective effect on the substrate.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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