scholarly journals The simulation, fabrication technology and characteristic research of micro-pressure sensor with isosceles trapezoidal beam-membrane

2020 ◽  
Vol 34 (29) ◽  
pp. 2050285
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Yibo Liu ◽  
Dianzhong Wen
Keyword(s):  
Pressure Sensor ◽  
Supply Voltage ◽  
Pressure Sensors ◽  
Simulation Models ◽  
Micro Electro Mechanical System ◽  
Fabrication Technology ◽  
Silicon Membrane ◽  
Pressure Sensitive ◽  
Mems Technology ◽  
Sensitive Characteristics

A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams (ITBs) and four piezoresistors. To investigate how the elastic silicon membrane affects pressure sensitive characteristics, simulation models based on ANSYS 15.0 software were used to analyze the effect of structural dimension on the characteristics of pressure sensor. According to that, the chips of micro-pressure sensors were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text] orientation. The experimental results show that the proposed sensor achieves a better sensitivity of 9.64 mV/kPa and an excellent linearity of 0.09%F.S. in the range of 0–3.0 kPa at room temperature and a supply voltage of 5.0 V, with a super temperature coefficient of sensitivity (TCS) about - 2180 ppm/[Formula: see text] from −40[Formula: see text] to 85[Formula: see text] and low pressure measurement less than 3.0 kPa.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

scholarly journals Single-Layer Pressure Textile Sensors with Woven Conductive Yarn Circuit

2020 ◽  
Vol 10 (8) ◽  
pp. 2877 ◽  
Author(s):  
Gaeul Kim ◽  
Chi Cuong Vu ◽  
Jooyong Kim
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Layer ◽  
Fast Response ◽  
Resistance Change ◽  
Load Pressure ◽  
Pressure Sensitive ◽  
High Durability ◽  
Textile Sensors ◽  
Conductive Fibers

Today, e-textiles have become a fundamental trend in wearable devices. Fabric pressure sensors, as a part of e-textiles, have also received much interest from many researchers all over the world. However, most of the pressure sensors are made of electronic fibers and composed of many layers, including an intermediate layer for sensing the pressure. This paper proposes the model of a single layer pressure sensor with electrodes and conductive fibers intertwined. The plan dimensions of the fabricated sensors are 14 x 14 mm, and the thickness is 0.4 mm. The whole area of the sensor is the pressure-sensitive point. As expected, results demonstrate an electrical resistance change from 283 Ω at the unload pressure to 158 Ω at the load pressure. Besides, sensors have a fast response time (50 ms) and small hysteresis (5.5%). The hysteresis will increase according to the pressure and loading distance, but the change of sensor loading distance is very small. Moreover, the single-layer pressure sensors also show high durability under many working cycles (20,000 cycles) or washing times (50 times). The single-layer pressure sensor is very thin and more flexible than the multi-layer pressure sensor. The structure of this sensor is also expected to bring great benefits to wearable technology in the future.

Flexible hemispheric microarrays of highly pressure-sensitive sensors based on breath figure method

Nanoscale ◽  
2018 ◽  
Vol 10 (22) ◽  
pp. 10691-10698 ◽  
Author(s):  
Zhihui Wang ◽  
Ling Zhang ◽  
Jin Liu ◽  
Hao Jiang ◽  
Chunzhong Li
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Pressure Sensing ◽  
Sensing Range ◽  
Pressure Sensitive ◽  
Breath Figure ◽  
Breath Figure Method ◽  
Flexible Pressure Sensors

Flexible pressure sensors with interlocked hemispheric microstructures are prepared by a novel breath figure strategy. The subtle microstructure remarkably improves the sensitivity and pressure sensing range of the pressure sensor.

A pressure-deformation analytical model for rectangular diaphragm of MEMS pressure sensors

2017 ◽  
Vol 31 (05) ◽  
pp. 1750046
Author(s):  
Wu Zhou ◽  
Dong Wang ◽  
Huijun Yu ◽  
Bei Peng
Keyword(s):  
Pressure Sensor ◽  
Applied Pressure ◽  
Influence Factors ◽  
Pressure Sensors ◽  
Superposition Method ◽  
Uniform Load ◽  
Pressure Sensitive ◽  
Partial Load ◽  
Mems Pressure Sensors ◽  
Measured Pressure

Rectangular diaphragm is commonly used as a pressure sensitive component in MEMS pressure sensors. Its deformation under applied pressure directly determines the performance of micro-devices, accurately acquiring the pressure–deflection relationship, therefore, plays a significant role in pressure sensor design. This paper analyzes the deflection of an isotropic rectangular diaphragm under combined effects of loads. The model is regarded as a clamped plate with full surface uniform load and partially uniform load applied on its opposite sides. The full surface uniform load stands for the external measured pressure. The partial load is used to approximate the opposite reaction of the silicon island which is planted on the diaphragm to amplify the deformation displacement, thus to improve the sensitivity of the pressure sensor. Superposition method is proposed to calculate the diaphragm deflections. This method considers separately the actions of loads applied on the simple supported plate and moments distributed on edges. Considering the boundary condition of all edges clamped, the moments are constructed to eliminate the boundary rotations caused by lateral load. The diaphragm’s deflection is computed by superposing deflections which produced by loads applied on the simple supported plate and moments distributed on edges. This method provides higher calculation accuracy than Galerkin variational method, and it is used to analyze the influence factors of the diaphragm’s deflection, includes aspect ratio, thickness and the applied force area of the diaphragm.

A resonant high-pressure sensor based on dual cavities

2021 ◽  
Vol 31 (12) ◽  
pp. 124002
Author(s):  
Jie Yu ◽  
Yulan Lu ◽  
Deyong Chen ◽  
Junbo Wang ◽  
Jian Chen ◽  
...  
Keyword(s):  
High Pressure ◽  
Temperature Sensitivity ◽  
Pressure Sensor ◽  
Pressure Range ◽  
High Vacuum ◽  
Pressure Sensors ◽  
Anodic Bonding ◽  
Temperature Range ◽  
Pressure Sensitive ◽  
Ocean Sciences

Abstract High-pressure sensors enable expansive demands in ocean sciences, industrial controls, and oil explorations. Successful sensor realized in piezoresistive high-pressure sensors which suffer from the key issue of compromised accuracies due to serious temperature drifts. Herein, this paper presents a high accuracy resonant high-pressure sensor with the pressure range of 70 MPa. Different from conventional resonant high-pressure sensor, the developed sensor utilized a dual-resonator-cavity design to minimize temperature disturbances and improve the pressure sensitivities. Besides, four circle cavities were used to maintain a high vacuum level for resonators after anodic bonding process. In details, Dual resonators, which is parallelly placed in the tensile and compressive stresses areas of a rectangular pressure sensitive diaphragm, are separated vacuum-packaged in the parallel dual cavities. Thus, pressure under measurement bends the pressure sensitive diaphragm, producing an increased pressure sensitivity and a decreased temperature sensitivity by the differential outputs of the dual resonators. Parameterized mathematical models of the sensor were established and the parameters of the models were optimized to adjust the pressure sensitivities and the temperature sensitivities of the sensor. Simplified deep reactive ion etching was used to form the sensing structure of the sensor and only once anodic bonding was used to form vacuum packaging for the dual resonators. Experimental results confirmed that the Q values of the resonators were higher than 32 000. Besides, the temperature sensitivity of the sensor was reduced from 44 Hz °C−1 (494 ppm °C−1) to 1 Hz °C−1 (11 ppm °C−1) by the differential outputs of the dual resonators in the temperature range of −10 °C–60 °C under the pressure of 1000 kPa. In addition, the accuracy of the sensor was better than 0.02% FS within the pressure range of 110–6500 kPa and the temperature range of −10 °C–60 °C by using a polynomial algorithm.

A SOI-MEMS Piezoresistive Atmosphere Pressure Sensor

2013 ◽  
Vol 562-565 ◽  
pp. 394-397
Author(s):  
Li Dong Du ◽  
Zhan Zhao ◽  
Li Xiao ◽  
Meng Ying Zhang ◽  
Zhen Fang
Keyword(s):  
Silicon Wafer ◽  
Pressure Sensor ◽  
Strain Gauge ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Atmosphere Pressure ◽  
Piezoresistive Pressure Sensor ◽  
The Cost

In this paper, a SOI-MEMS (silicon on insulator- micro electro mechanical system) pizeoresistive atmosphere pressure sensor is presented using anodic bonding. Differently from the prevailing fabrication process of silicon piezoresistive pressure sensor: the device layer monocrystalline of SOI silicon wafer is used as the strain gauge with a simple deep etching process; and the SiO2 layer of SOI silicon wafer as the insulator between strain gauge and substrate. The whole fabrication processes of the designed sensor are very simple, and can reduce the cost of sensor. The Pressure-Voltage characteristic test results suggest a precision within 0.14% in linear fitting. It is shown that the temperature coefficient is 2718ppm/°C from the Typical temperature curve of the pressure sensors.

An Overmolded Pressure Sensor Package Using an Ultrathick Photoresist Sacrificial Layer

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
Lung-Tai Chen ◽  
Wood-Hi Cheng
Keyword(s):  
Pressure Sensor ◽  
Output Voltage ◽  
Sacrificial Layer ◽  
Pressure Sensors ◽  
Element Model ◽  
Silicon Membrane ◽  
Molding Process ◽  
Molding Compound ◽  
Voltage Drift ◽  
Sensor Package

This study presents a novel technique for an overmolded package of piezoresistive pressure sensors using an ultrathick photoresist sacrificial layer. A 150 μm photoresist block is placed just on the silicon membrane of the pressure sensor and removed after the molding transfer process. The removal of the photoresist block exposes and reserves a sensing channel in the overmolded pressure sensor package. Experimental observations reveal that the silicon membrane of the pressure sensor is completely free of any epoxy molding compound contamination after the transfer molding process. The effectiveness of the photoresist block in shielding the silicon membrane of the pressure sensor was confirmed. Experiment and finite element model results reveal that the packaged pressure sensor has similar sensing characteristics to those of an unpackaged pressure sensor at room temperature. However, the packaged pressure sensor exerts a thermomechanical stress on the silicon membrane of the pressure sensor, resulting in an undesired output voltage drift. Employing a proper package design can reduce the output voltage drift. The proposed packaging scheme has a small package volume and surface mount device compatible features, making it suitable for portable commercial devices.

FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor

2011 ◽  
Vol 464 ◽  
pp. 208-212
Author(s):  
Hai Bin Pan ◽  
Jian Ning Ding ◽  
Guang Gui Cheng ◽  
Hui Juan Fan
Keyword(s):  
Finite Element ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Fem Simulation ◽  
Sensor Chip ◽  
Stress Distributions ◽  
Island Structure ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Piezoresistive Pressure Sensors

In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.

scholarly journals 3D Printed Pressure Sensor Based on Surface Acoustic Wave Resonator

2021 ◽  
Vol 21 (3) ◽  
pp. 76-81
Author(s):  
Baofa Hu ◽  
Zhiwei Li ◽  
Yuanjie Wan ◽  
Peng Zhou ◽  
Chunquan Zhang ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Pressure Sensing ◽  
Wave Resonator ◽  
Mems Technology ◽  
3D Printed ◽  
Temperature And Pressure ◽  
Saw Resonators

Abstract This paper reports a 3-dimentional (3D) pressure sensor based on surface acoustic wave (SAW) resonators. The SAW resonators were designed and fabricated on 128°Y-X LiNbO3 substrate using the MEMS technology. The pressure sensing structure was 3D-printed using polyactic acid plastic, and two SAW resonators were integrated in the 3D-printed chamber structure for both temperature and pressure sensing. The SAW-based gas pressure sensors demonstrate a sensitivity of 589 ppm/MPa at the pressure range of 100-600 kPa and temperature of 40 °C.

SIMULATION METHODS OF PIEZORESISTIVE PRESSURE SENSORS IN ORDER TO IMPROVE CONSISTENCY

2012 ◽  
Vol 27 (02) ◽  
pp. 1350011 ◽  
Author(s):  
ZHAOHUA ZHANG ◽  
TIANLING REN ◽  
RUIRUI HAN ◽  
LI YUAN ◽  
BO PANG
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Simulation Method ◽  
Test Results ◽  
Silicon Membrane ◽  
Element Analysis ◽  
Piezoresistive Pressure Sensor ◽  
Consistency Results ◽  
Good Consistency ◽  
Piezoresistive Pressure Sensors

It is important to realize good consistency among different device units on a big wafer. The bad product consistency results from the processing deviation which is hard to control. A novel simulation method to control and reduce the influence of processing deviation on the sensitivity of a piezoresistive pressure sensor is provided in this paper. Based on finite element analysis (FEA) and mathematical integration, the performance of the pressure sensors is simulated. The pressure sensors are designed and fabricated according to the simulation results. The test results confirm that this simulation method can help to design the pressure sensor very precisely. From the simulation and test results, we find that properly enlarging the size of the square silicon membrane can improve the devices consistency.

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