A Low Voltage, Low Power and Highly Linear CMOS Down-Conversion Gilbert Cell Mixer Using MGTR Method

2015 ◽  
Vol 24 (07) ◽  
pp. 1550098
Author(s):  
E. Morad ◽  
S. Z. Moussavi ◽  
M. Alasvandi ◽  
E. Rasouli
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Noise Figure ◽  
Supply Voltage ◽  
Local Oscillator ◽  
Input Power ◽  
Ism Band ◽  
Simulation Results ◽  
Linear Mixer ◽  
Down Conversion

A radio frequency (RF) low voltage and low power down conversion mixer with high linearity using TSMC 0.18-μm technology is presented which operates in 2.4 GHz Industrial Scientific and Medical (ISM) band. The local oscillator (LO) frequency is 2.1 GHz with an input power of 5 dBm, whereas IF frequency is 300 MHz. Multiple gated transistors (MGTRs) method is used to increase the linearity of Gilbert cell mixer. In this method an auxiliary transistor is used parallel to the transconductance stage transistor. This increases linearity by decreasing of transconductance stage transistor. The simulation results show an IIP3 improvement of 16.55 dBm. The proposed low power and highly linear mixer consumes a power of 4.46 mW from 1.8 V a supply voltage. The noise figure (NF) and gain conversion are about 13.8 dB and 9.11 dB, respectively.

A High-Linear CMOS Down Conversion Mixer Using Adjusting the Second and Third-Order Harmonic in Transconductance Stage

2014 ◽  
Vol 24 (01) ◽  
pp. 1550002 ◽  
Author(s):  
Mina Amiri ◽  
Adib Abrishamifar
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Simulation ◽  
Cmos Technology ◽  
Conversion Gain ◽  
Third Order ◽  
Cmos Mixer ◽  
Simulation Results ◽  
Down Conversion ◽  
Pmos Transistor

In this paper a new high-linear CMOS mixer is proposed. A well-known low voltage CMOS multiplier structure is used for mixer application in this paper and its linearity is provided by adjusting the value of a resistor, sizing the aspect ratio of a PMOS transistor and adding a proper value of inductor at the input stage. In simulation, a supply voltage as low as 1 V is applied to the circuit. Simulation results of improved mixer in a 0.18-μm CMOS technology illustrate 14 dB increases in IIP3 and also an increase around 1.4 dB is obtained in conversion gain. Furthermore, additional components which are used for improving linearity would not increase the power consumption and area significantly.

A Novel CNFET Technology Based 3 Bit Flash ADC for Low-Voltage High Speed SoC Application

2015 ◽  
Vol 19 ◽  
pp. 19-36 ◽  
Author(s):  
P.A. Gowri Sankar ◽  
G. Sathiyabama
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Circuit Design ◽  
Field Effect ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Flash Adc ◽  
Simulation Results

The continuous scaling down of metal-oxide-semiconductor field effect transistors (MOSFETs) led to the considerable impact in the analog-digital mixed signal integrated circuit design for system-on-chips (SoCs) application. SoCs trends force ADCs to be integrated on the chip with other digital circuits. These trends present new challenges in ADC circuit design based on existing CMOS technology. In this paper, we have designed and analyzed a 3-bit high speed, low-voltage and low-power flash ADC at 32nm CNFET technology for SoC applications. The proposed ADC utilizes the Threshold Inverter Quantization (TIQ) technique that uses two cascaded carbon nanotube field effect transistor (CNFET) inverters as a comparator. The TIQ technique proposed has been developed for better implementation in SoC applications. The performance of the proposed ADC is studied using two different types of encoders such as ROM and Fat tree encoders. The proposed ADCs circuits are simulated using Synopsys HSPICE with standard 32nm CNFET model at 0.9 input supply voltage. The simulation results show that the proposed 3 bit TIQ technique based flash ADC with fat tree encoder operates up to 8 giga samples per second (GSPS) with 35.88µW power consumption. From the simulation results, we observed that the proposed TIQ flash ADC achieves high speed, small size, low power consumption, and low voltage operation compared to other low power CMOS technology based flash ADCs. The proposed method is sensitive to process, temperature and power supply voltage variations and their impact on the ADC performance is also investigated.

A 2.4 GHz Low Voltage Low Power Folded Down-Conversion Quadrature Mixer Design

2013 ◽  
Vol 760-762 ◽  
pp. 526-530
Author(s):  
Ming Li ◽  
Zhi Qun Li ◽  
Chen Jian Wu ◽  
Meng Zhang ◽  
Jia Cao ◽  
...  
Keyword(s):  
Low Voltage ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Process ◽  
Folded Structure ◽  
Single Side ◽  
Mixer Design ◽  
Low Supply Voltage ◽  
Single Side Band ◽  
Down Conversion

This paper introduces a 2.4 GHz down-conversion quadrature mixer which applied in the Wireless Sensor Network (WSN). The mixer uses a folded structure which is modified based on the conventional Gilbert mixer. It is designed in 0.18μm RF CMOS process with a low supply voltage of 1V. The post-simulation results show that the mixer achieves a conversion gain (CG) of 9.0dB, the input 1dB compression point (IP1dB) of-7.6dBm, the third-order input intercept point (IIP3) of 2.2dBm, and the single side-band (SSB) noise figure (NF) is 13.9dB. The mixer core consumes current about 1.2mA from a 1V power supply.

A Low-Power, High-Gain, and Low-Noise 802.11a Down-Conversion Mixer in 0.35-μm SiGe Bi-CMOS Technology

2017 ◽  
Vol 26 (09) ◽  
pp. 1750134 ◽  
Author(s):  
Jun-Da Chen ◽  
Song-Hao Wang
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Cmos Process ◽  
Conversion Gain ◽  
Dc Power ◽  
Down Conversion

The paper presents a novel 5.15[Formula: see text]GHz–5.825[Formula: see text]GHz SiGe Bi-CMOS down-conversion mixer for WLAN 802.11a receiver. The architecture used is based on Gilbert cell mixer, the combination of MOS transistors and HBT BJT transistor device characteristics. The hetero-junction bipolar transistor (HBT) topology is adopted at the transconductance stage to improve power gain and reduce noise factor, and the LO series-parallel CMOS switch topology will be applied to reduce supply voltage and dc power at the switching stage. This mixer is implemented in TSMC 0.35-[Formula: see text]m SiGe Bi-CMOS process, and the chip size including the test pads is 1.175*0.843[Formula: see text]mm2. The main advantages for the proposed mixer are high conversion gain, a moderate linearity, low noise figure, and low power. The post-simulation results achieved are as follows: 14[Formula: see text]dB power conversion gain, [Formula: see text]6[Formula: see text]dBm input third-order intercept point (IIP3), 6.85[Formula: see text]dB double side band (DSB) noise figure. The total mixer current is about 1.54[Formula: see text]mA from 1.4[Formula: see text]V supply voltage including output buffer. The total dc power consumption is 2.15[Formula: see text]mW.

The Design of Ultra Low Power RF CMOS LNA in Nanometer Technology

2016 ◽  
pp. 229-251
Author(s):  
Kavyashree P. ◽  
Siva S. Yellampalli
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Ultra Low Power ◽  
Low Voltage Operation ◽  
Common Gate ◽  
Low Power Cmos ◽  
Power Application

In this chapter, an ultra low power CMOS Common Gate LNA (CGLNA) with a Capacitive Cross-Coupled (CCC) gm boosting scheme is designed and analysed. The technique described has been employed in literature to reduce the Noise Figure (NF) and power dissipation. In this work we have extended the concept for low voltage operation along with improving NF and also for significant reduction in current consumption. A gm boosted CCC-CGLNA is implemented in 90nm CMOS technology. It has a gain of 9.9dB and a noise figure of 0.87dB at 2.4GHz ISM band and consumes less power (0.5mw) from 0.6V supply voltage. The designed gm boosted CCC-CGLNA is suitable for low power application in CMOS technologies.

Low Voltage Low Power Folded Mixer for S-Band Wireless Applications

Frequenz ◽  
2014 ◽  
Vol 68 (11-12) ◽  
Author(s):  
Shiqiang Chen ◽  
Junfeng Wang
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Conversion Gain ◽  
Chip Area ◽  
Wireless Applications ◽  
Dc Power ◽  
Rf Signal

AbstractThis paper describes a low voltage low power (LV-LP) folded mixer for S-band wireless applications. The proposed mixer could convert a 10 MHz intermediate frequency (IF) signal to a 2.4 GHz RF signal with a local oscillator (LO) power of 0 dBm at 2.39 GHz. The comparison with the previous reported mixers shows that the proposed mixer has the advantages of lower voltage, lower power consumption and higher conversion gain than most of the other works. Simulation results demonstrate that the mixer a remarkable conversion gain of 10.5 dB while consuming only 0.65 mW DC power from a 0.8 V supply voltage. The input-referred third-order intercept point (IIP3) of the mixer is 3.75 dBm, and the chip area is only 0.525 mm

COMPOSITE TRANSISTOR CELL USING DYNAMIC BODY BIAS FOR HIGH GAIN AND LOW-VOLTAGE APPLICATIONS

2014 ◽  
Vol 23 (08) ◽  
pp. 1450108 ◽  
Author(s):  
VANDANA NIRANJAN ◽  
ASHWANI KUMAR ◽  
SHAIL BALA JAIN
Keyword(s):  
Low Power ◽  
Large Scale ◽  
Low Voltage ◽  
Supply Voltage ◽  
High Gain ◽  
Signal Frequency ◽  
Output Impedance ◽  
Self Cascode ◽  
Intrinsic Gain ◽  
Body Bias

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal analysis. The proposed cell can operate at low power supply voltage of 1 V and consumes merely 43.1 nW. PSpice simulation results using 180 nm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC) are included to prove the unique results. The proposed cell could constitute an efficient analog Very Large Scale Integration (VLSI) cell library in the design of high gain analog integrated circuits and is particularly interesting for biomedical and instrumentation applications requiring low-voltage low-power operation capability where the processing signal frequency is very low.

scholarly journals A 0.3 V Rail-to-Rail Ultra-Low-Power OTA with Improved Bandwidth and Slew Rate

2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Process ◽  
Slew Rate ◽  
Large Signal ◽  
Output Stage ◽  
Ultra Low Power ◽  
Input Stage ◽  
Rail To Rail

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.

Low-Power and Reference-Less Data and Clock Recovery Circuit for Visible Light Receivers

2018 ◽  
Author(s):  
Ming-Cheng Liu ◽  
Paul C.-P. Chao ◽  
Soh Sze Khiong
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Visible Light ◽  
Low Voltage ◽  
Supply Voltage ◽  
Clock And Data Recovery ◽  
Optical Receiver ◽  
Clock Recovery ◽  
Cmos Process ◽  
Rf Receiver

In this paper a low power all-digital clock and data recovery (ADCDR) with 1Mhz frequency has been proposed. The proposed circuit is designed for optical receiver circuit on the battery-less photovoltaic IoT (Internet of Things) tags. The conventional RF receiver has been replaced by the visible light optical receiver for battery-less IoT tags. With this proposed ADCDR a low voltage, low power consumption & tiny IoT tags can be fabricated. The proposed circuit achieve the maximum bandwidth of 1MHz, which is compatible with the commercial available LED and light sensor. The proposed circuit has been fabricated in TSMC 0.18um 1P6M standard CMOS process. Experimental results show that the power consumption of the optical receiver is approximately 5.58uW with a supply voltage of 1V and the data rate achieves 1Mbit/s. The lock time of the ADCDR is 0.893ms with 3.31ns RMS jitter period.

Low Power FGSRAM Cell Using Sleepy and LECTOR Technique

2016 ◽  
Vol 4 (2) ◽  
pp. 333 ◽  
Author(s):  
Kanan Bala Ray ◽  
Sushanta Kumar Mandal ◽  
Shivalal Patro
Keyword(s):  
Low Power ◽  
Power Supply ◽  
High Stability ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Floating Gate ◽  
Power Supply Voltage ◽  
Operation Analysis ◽  
Sram Cell ◽  
Simulation Results

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>

Sign in / Sign up

Export Citation Format

Share Document