Novel CMOS Current Inverting Differential Input Transconductance Amplifier and Its Application

2016 ◽  
Vol 26 (01) ◽  
pp. 1750010 ◽  
Author(s):  
Atul Kumar ◽  
Bhartendu Chaturvedi
Keyword(s):  
Active Element ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Operating Voltage ◽  
Performance Parameters ◽  
Quadrature Oscillator ◽  
Differential Input ◽  
Transconductance Amplifier ◽  
Electronically Controllable ◽  
Cmos Implementation

This paper presents the complementary metal oxide semiconductor (CMOS) implementation of active building block, namely, current inverting differential input transconductance amplifier (CIDITA) along with its performance parameters. The detailed study of the proposed CMOS CIDITA has been incorporated. The presented study shows the good performance of CIDITA in terms of good bandwidth range, good linear range of input current, high accuracy and low operating voltage. A new circuit of single active element-based quadrature oscillator is further realized to explore the workability of CIDITA. The proposed circuit of quadrature oscillator employs two grounded capacitors, one resistor and single CIDITA. The proposed quadrature oscillator provides both quadrature current outputs and quadrature voltage outputs simultaneously. The frequency of oscillation of the proposed quadrature oscillator is electronically controllable. The possible practical realization of the CIDITA using commercially available ICs is also given. HSPICE simulation results using 0.18[Formula: see text][Formula: see text]m CMOS parameters are given to validate the proposed theory.

scholarly journals Multiobjective Genetic Algorithms Program for the Optimization of an OTA for Front-End Electronics

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Abdelghani Dendouga ◽  
Slimane Oussalah ◽  
Damien Thienpont ◽  
Abdenour Lounis
Keyword(s):  
Genetic Algorithms ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Program Optimization ◽  
Circuit Simulator ◽  
Multiobjective Genetic Algorithms ◽  
Transconductance Amplifier ◽  
Analog Part ◽  
Unity Gain

The design of an interface to a specific sensor induces costs and design time mainly related to the analog part. So to reduce these costs, it should have been standardized like digital electronics. The aim of the present work is the elaboration of a method based on multiobjectives genetic algorithms (MOGAs) to allow automated synthesis of analog and mixed systems. This proposed methodology is used to find the optimal dimensional transistor parameters (length and width) in order to obtain operational amplifier performances for analog and mixed CMOS-(complementary metal oxide semiconductor-) based circuit applications. Six performances are considered in this study, direct current (DC) gain, unity-gain bandwidth (GBW), phase margin (PM), power consumption (P), area (A), and slew rate (SR). We used the Matlab optimization toolbox to implement the program. Also, by using variables obtained from genetic algorithms, the operational transconductance amplifier (OTA) is simulated by using Cadence Virtuoso Spectre circuit simulator in standard TSMC (Taiwan Semiconductor Manufacturing Company) RF 0.18 μm CMOS technology. A good agreement is observed between the program optimization and electric simulation.

Realization of Fractional-Order Double-Scroll Chaotic System Using Operational Transconductance Amplifier (OTA)

2017 ◽  
Vol 27 (01) ◽  
pp. 1850006 ◽  
Author(s):  
Mohammad Rafiq Dar ◽  
Nasir Ali Kant ◽  
Farooq Ahmad Khanday
Keyword(s):  
Fractional Order ◽  
Chaotic System ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Operational Transconductance Amplifiers ◽  
System A ◽  
Transconductance Amplifier ◽  
Theoretical Predictions

Realization of fractional-order double-scroll chaotic system using Operational Transconductance Amplifiers (OTAs) as active elements are presented in this paper. The fractional-order double-scroll chaotic system has been studied before as well using passive RC-ladder and tree-based structures but in this paper the requisite fractional-order integration has been accomplished through an integer-order multiple-feedback topology. As compared to double or multiple scroll chaotic systems existing in the open literature, the proposed realization offers the advantages of (a) low-voltage implementation, (b) integrablity as the design is resistor- and inductor-less and only grounded components have been employed in the design, and, (c) electronic tunability of the fractional order, time-constants and gain factors. In order to demonstrate the usefulness of the chaotic system, a simple secure message communication system has been designed and verified for its operation. The theoretical predictions of the proposed implementations have been verified by using 0.35[Formula: see text][Formula: see text]m complementary metal oxide semiconductor (CMOS) process file provided by Austrian Micro System (AMS).

scholarly journals TiO2-x films for bolometer applications: recent progress and perspectives

2021 ◽  
Author(s):  
Qiming Zhang ◽  
Ruiyang Yan ◽  
Xiaoyan Peng ◽  
YuShui Wang ◽  
Shuanglong Feng
Keyword(s):  
Infrared Imaging ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Performance Parameters ◽  
Large Area ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material ◽  
Good Thermal Stability ◽  
Photoelectric Performance

Abstract The bolometer is widely used in military and civilian infrared imaging due to its advantages of non-cooling, small size and portability. Thermosensitive materials seriously affect the performance of bolometers. As a kind of heat-sensitive material, the TiO2-x material has the advantages of good thermal stability, large-area preparation, and compatibility with the complementary metal-oxide semiconductor (CMOS) process. However, there is almost no review on the application of titanium oxide for bolometers. In this paper, we introduce the bolometer's main thermal and photoelectric performance parameters and the critical technologies to manufacture the bolometer. Finally, we will particularly emphasize the effects of preparation process parameters of TiO2 on the performance parameters temperature coefficient of resistance (TCR), 1/f noise, etc., were studied.

scholarly journals Design and analysis of current mirror OTA in 45 nm and 90 nm CMOS technology for bio-medical application

2020 ◽  
Vol 9 (1) ◽  
pp. 221-228
Author(s):  
Wan Mohammad Ehsan Aiman Wan Jusoh ◽  
Siti Hawa Ruslan
Keyword(s):  
Detection System ◽  
Complementary Metal Oxide Semiconductor ◽  
Medical Application ◽  
Cmos Technology ◽  
Open Loop ◽  
Oxide Semiconductor ◽  
Current Mirror ◽  
Ecg Signals ◽  
Transconductance Amplifier ◽  
And Performance

This paper proposed a design and performance analysis of current mirror operational transconductance amplifier (OTA) in 45 nm and 90 nm complementary metal oxide semiconductor (CMOS) technology for bio-medical application. Both OTAs were designed and simulated using Synopsys tools and the simulation results were analysed thoroughly. The OTAs were designed to be implemented in bio-potential signals detection system where the input signals were amplified and filtered according to the specifications. From the comparative analysis of both OTAs, the 45 nm OTA managed to produce open loop gain of 45 dB, with common mode rejection ratio (CMRR) of 93.2 dB. The 45 nm OTA produced only 1.113 μV√Hz of input referred noise at 1 Hz. The 45 nm OTA also consumed only 28.21 nW of power from ± 0.5 V supply. The low-power consumption aspect displayed by 45 nm OTA made it suitable to be implemented in bio-medical application such as bio-potential signals detection system where it can be used to amplify and filter the electrocardiogram (ECG) signals.

scholarly journals Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics

2017 ◽  
Vol 114 (20) ◽  
pp. 5107-5112 ◽  
Author(s):  
Ting Lei ◽  
Ming Guan ◽  
Jia Liu ◽  
Hung-Cheng Lin ◽  
Raphael Pfattner ◽  
...  
Keyword(s):  
Low Cost ◽  
Electronic Waste ◽  
Complementary Metal Oxide Semiconductor ◽  
Building Blocks ◽  
Consumer Electronics ◽  
Semiconducting Polymers ◽  
Oxide Semiconductor ◽  
Operating Voltage ◽  
Potential Applications ◽  
Transient Electronics

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal–oxide–semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m2) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

scholarly journals Excel Methods to Design and Validate in Microelectronics (Complementary Metal–Oxide–Semiconductor, CMOS) for Biomedical Instrumentation Application

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7486
Author(s):  
Graciano Dieck-Assad ◽  
José Manuel Rodríguez-Delgado ◽  
Omar Israel González Peña
Keyword(s):  
Integrated Circuits ◽  
Degrees Of Freedom ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Open Science ◽  
Oxide Semiconductor ◽  
Instrumentation Amplifier ◽  
Short Channel ◽  
Transconductance Amplifier ◽  
Cmos Mems

CMOS microelectronics design has evolved tremendously during the last two decades. The evolution of CMOS devices to short channel designs where the feature size is below 1000 nm brings a great deal of uncertainty in the way the microelectronics design cycle is completed. After the conceptual idea, developing a thinking model to understand the operation of the device requires a good “ballpark” evaluation of transistor sizes, decision making, and assumptions to fulfill the specifications. This design process has iterations to meet specifications that exceed in number of the available degrees of freedom to maneuver the design. Once the thinking model is developed, the simulation validation follows to test if the design has a good possibility of delivering a successful prototype. If the simulation provides a good match between specifications and results, then the layout is developed. This paper shows a useful open science strategy, using the Excel software, to develop CMOS microelectronics hand calculations to verify a design, before performing the computer simulation and layout of CMOS analog integrated circuits. The full methodology is described to develop designs of passive components, as well as CMOS amplifiers. The methods are used in teaching CMOS microelectronics to students of electronic engineering with industrial partner participation. This paper describes an exhaustive example of a low-voltage operational transconductance amplifier (OTA) design which is used to design an instrumentation amplifier. Finally, a test is performed using this instrumentation amplifier to implement a front-end signal conditioning device for CMOS-MEMS biomedical applications.

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