Area-Efficient Capacitor-Splitting Switching Scheme with a Nearly Constant Common-Mode Voltage for SAR ADCs

2019 ◽  
Vol 29 (10) ◽  
pp. 2020005
Author(s):  
Hao Wang ◽  
Wenming Xie ◽  
Zhixin Chen

A novel area-efficient switching scheme is proposed for the successive approximation register (SAR) analog-to-digital converters (ADCs). The capacitor-splitting structure, charge-average switching technique, and [Formula: see text] (equal to [Formula: see text]/4) are combined together and optimized to realize the proposed switching scheme. [Formula: see text] is only used in the last two bit cycles, which affects the ADC accuracy little and reduces capacitor area by half. It achieves a 98% less switching energy and an 87.5% less capacitor area compared with the conventional switching method. In addition, the DAC output common-mode voltage is approximately constant. Thus, the proposed switching method is a good tradeoff among power consumption, capacitor area, DAC output common-mode voltage, and ADC accuracy. The proposed SAR ADC is simulated in 0.18[Formula: see text][Formula: see text]m CMOS technology with a supply voltage of 0.6[Formula: see text]V and at a sampling rate of 20[Formula: see text]kS/s. The signal-to-noise-distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 58.2 and 73.7[Formula: see text]dB, respectively. The effective number of bits (ENOB) is 9.4. It consumes 42[Formula: see text]nW, resulting in a figure-of-merit (FoM) of 3.11 fJ/conversion-step.

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740051 ◽  
Author(s):  
Yunfeng Hu ◽  
Chao Xiong ◽  
Bin Li

A 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) with an energy-efficient and area-efficient switching scheme was presented. By using C-2C dummy capacitor and an extra reference [Formula: see text] for the last capacitor, the proposed switching scheme achieves 97.65% switching energy saving, 87.2% capacitor area reduction and 47.06% switches reduction, compare to conventional switching scheme. The ADC was implemented in a 180 nm CMOS technology 1.8 V power supply, at sampling rate of 100 kS/s, the ADC achieves an SNDR of 57.84 dB and consumes 0.975 [Formula: see text], resulting in a figure-of-merit (FOM) of 15.3 fJ/conversion-step.


2017 ◽  
Vol 27 (01) ◽  
pp. 1850010 ◽  
Author(s):  
Donglin Zhu ◽  
Maliang Liu ◽  
Zhangming Zhu

In this paper, a high energy saving digital-to-analog converter (DAC) switching scheme with common-mode voltage variation in 1LSB is proposed for successive approximation register (SAR) analog-to-digital converters (ADCs). Based on the third reference ([Formula: see text]), split-capacitor technique and complementary switching method, the proposed switching scheme achieves a 99.6% switching energy reduction and a 75% area reduction compared to the conventional architecture, furthermore, the common-mode voltage varies only 1LSB during a conversion cycle.


Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2033
Author(s):  
Ahmed Elgreatly ◽  
Ahmed Dessouki ◽  
Hassan Mostafa ◽  
Rania Abdalla ◽  
El-sayed El-Rabaie

Time-based analog-to-digital converter is considered a crucial part in the design of software-defined radio receivers for its higher performance than other analog-to-digital converters in terms of operation speed, input dynamic range and power consumption. In this paper, two novel voltage-to-time converters are proposed at which the input voltage signal is connected to the body terminal of the starving transistor rather than its gate terminal. These novel converters exhibit better linearity, which is analytically proven in this paper. The maximum linearity error is reduced to 0.4%. In addition, the input dynamic range of these converters is increased to 800 mV for a supply voltage of 1.2 V by using industrial hardware-calibrated TSMC 65 nm CMOS technology. These novel designs consist of only a single inverter stage, which results in reducing the layout area and the power consumption. The overall power consumption is 18 μW for the first proposed circuit and 15 μW for the second proposed circuit. The novel converter circuits have a resolution of 5 bits and operate at a maximum clock frequency of 500 MHz.


2013 ◽  
Vol 22 (09) ◽  
pp. 1340014 ◽  
Author(s):  
SIDA AMY SHEN ◽  
SHUANG XIE ◽  
WAI TUNG NG

This paper presents a 4-bit windowed delay-line analog-to-digital converter (ADC) implemented in 65 nm CMOS technology for VLSI dynamic voltage scaling power management applications. Good linearity is achieved in the proposed power and area efficient ADC without the use of resistors for compensation. The circuit performance was analyzed theoretically and verified experimentally. The measured DNL is within ±0.25 LSB and INL ±0.15 LSB. It occupies an area of 0.009 mm2. With a sampling rate of 4 MHz, the ADC consumes 14 μW with an ENOB of 4.1 and voltage sensing range from 0.87 V to 1.32 V.


Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 421
Author(s):  
Min-Jae Seo

This work presents a 12 bit 200 MS/s dual-residue pipelined successive approximation registers (SAR) analog-to-digital converter (ADC) with a single open-loop residue amplifier (RA). By using the inherent characteristics of the SAR conversion scheme, the proposed ADC sequentially generates two residue levels from the single RA, which eliminates the need for inter-stage gain-matching calibration. To convert the sequentially generated the two residues, a capacitive interpolating SAR ADC (I-SAR ADC) is also proposed. The I-SAR ADC is very compact because it consists of the one comparator, a CDAC, and control logic like a conventional SAR ADC. In addition, the I-SAR ADC needs no static power dissipation for the residue interpolation. A prototype ADC fabricated in a 40 nm CMOS technology occupies an active area of 0.026 mm2. At a 200 MS/s sampling-rate with the Nyquist input, the ADC achieves an SNDR (Signal-to-Noise distortion ratio) of 62.1 dB and 67.1 dB SFDR (Spurious-Free Dynamic Range), respectively. The total power consumed is 3.9 mW under a 0.9 V supply. Without any inter-stage mismatch calibration, the ADC achieve Walden Figure-of-Merit (FoM) of 19.0 fJ/conversion-step.


2021 ◽  
Vol 11 (6) ◽  
pp. 2528 ◽  
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti

A novel, inverter-based, fully differential, body-driven, rail-to-rail, input stage topology is proposed in this paper. The input stage exploits a replica bias control loop to set the common mode current and a common mode feed-forward strategy to set its output common mode voltage. This novel cell is used to build an ultralow voltage (ULV), ultralow-power (ULP), two-stage, unbuffered operational amplifier. A dual path compensation strategy is exploited to improve the frequency response of the circuit. The amplifier has been designed in a commercial 130 nm CMOS technology from STMicroelectronics and is able to operate with a nominal supply voltage of 0.3 V and a power consumption as low as 11.4 nW, while showing about 65 dB gain, a gain bandwidth product around 3.6 kHz with a 50 pF load capacitance and a common mode rejection ratio (CMRR) in excess of 60 dB. Transistor-level simulations show that the proposed circuit outperforms most of the state of the art amplifiers in terms of the main figures of merit. The results of extensive parametric and Monte Carlo simulations have demonstrated the robustness of the proposed circuit to PVT and mismatch variations.


Symmetry ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 1757
Author(s):  
Shouping Li ◽  
Jianjun Chen ◽  
Bin Liang ◽  
Yang Guo

This paper proposed a digital background calibration algorithm with positive and negative symmetry error tolerance to remedy the capacitor mismatch for successive approximation register analog-to-digital converters (SAR ADCs). Compensate for the errors caused by capacitor mismatches and improve the ADC performance. Combination with a tri-level switching scheme based on the common-mode voltage Vcm to achieve capacitor reduction and high switching energy efficiency. The proposed calibration algorithm significantly improves capacitor mismatch without resorting to extensive computation or dedicated circuits. The active area is 0.046 mm2 in 40 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology. The post-simulation results show the effective number of bits (ENOB) improves from 8.23 bits to 11.36 bits, signal-to-noise-and distortion ratio (SNDR) improves from 51.33 dB to 70.15 dB, respectively, before and after calibration. This improves the spurious-free dynamic range (SFDR) by 24.13 dB, from 61.50 dB up to 85.63 dB. The whole ADC’s power consumption is only 0.3564 mW at sampling rate fs =2 MS/s and Nyquist input frequency, with a figure-of-merit (FOM) 67.8 fJ/conv.-step.


2013 ◽  
Vol 748 ◽  
pp. 847-852
Author(s):  
Jun Yang ◽  
Hong Hui Deng ◽  
Rui Zhang ◽  
Yong Sheng Yin

A high performance sample-and-hold (S/H) circuit with input common mode feedback (ICMFB) is presented. The ICMFB is used to ensure that the input common mode voltage for the sample-and-hold amplifier (SHA) is maintained at a known value during the hold phase of operation in order to reduce the differential output error when the sample capacitor and feedback capacitor has mismatch. Meanwhile, bootstrapped switches are used to lower the switch on-resistance and reduce the effect of switch non-idealities. Then a low power two stage high gain wideband SHA is designed to guarantee the holding accuracy. Hspice simulated results based on SMIC 0.13μm 1P5M CMOS process under 1.2V supply voltage shows a 108.4 dB spurious free dynamic range (SFDR) at Nyquist input @Fs=100MS/s. The designed S/H circuit has been used in the front end of 14-bit 100MS/s Pipelined ADC adapted for single-ended applications.


2014 ◽  
Vol 23 (01) ◽  
pp. 1450004 ◽  
Author(s):  
XIAOBO XUE ◽  
XIAOLEI ZHU ◽  
QIFENG SHI ◽  
LENIAN HE

In this paper, a 12-bit current-steering digital-to-analog converter (DAC) employing a deglitching technique is proposed. The deglitching technique is realized by lowering the voltage swing of the control signal as well as by using a method of glitch counteraction (GC). A new switch–driver structure is designed to enable the effectiveness of the GC and provide sufficient driving capability under a low supply voltage. Moreover, the control signal's rise/fall asymmetry which increases the glitch error can be suppressed by using the proposed switch–driver structure. The 12-bit DAC is implemented in 180 nm CMOS technology. The measurement results show that the spurious free dynamic range (SFDR) at low signal frequency is 78.8 dB, and it is higher than 70 dB up to 60 MHz signal frequency at 400 MS/s. The measured INL and DNL are both less than ±0.6 LSB.


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