EFFECTS OF Co CONCENTRATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF Zn1−xCoxS FILMS

2020 ◽  
Vol 27 (08) ◽  
pp. 1950196
Author(s):  
SHUFENG LI ◽  
LI WANG ◽  
XUEQIONG SU ◽  
YONG PANG ◽  
DONGWEN GAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Doping Concentration ◽  
Index Formula ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Co Doping ◽  
Energy Formula

Amorphous and crystalline Zn[Formula: see text]CoxS ([Formula: see text], 0.3, 0.5) thin films were grown on sapphire (Al2O3) substrates by pulsed laser deposition at substrate temperature of 25∘C and 800∘C, respectively. The X-ray diffraction results show that the crystalline film has a cubic zinc blende structure and the crystalline quality decreased with increasing Co-doping concentration. The X-ray diffraction and X-ray photoelectron spectroscopy spectra reveal that the samples reached an overdoping state at Co-doping concentration of [Formula: see text]. The absorbance of films increases and the absorption edge shifts to longer wave length direction with increasing Co-doping concentration. The redshift of the band gap energy depends on the Co composition associating with the Urbach energy. Furthermore, the refractive index and dielectric constant increase with increasing Co-doping concentration. The dispersion parameters, such as dispersion energy ([Formula: see text]), oscillator energy ([Formula: see text]), static refractive index ([Formula: see text]), static dielectric constant ([Formula: see text]), interband transition strength moments ([Formula: see text] and [Formula: see text]), oscillator strength [Formula: see text] and oscillator wavelength [Formula: see text], have been analyzed by Wemple–DiDomenico single oscillator model. All these parameters were found to be dependent upon the Co-doping concentration in the Zn[Formula: see text]CoxS thin films.

scholarly journals Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 55-72
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Indium Content ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Evaporation Technique ◽  
High Indium Content ◽  
Diffraction Patterns

Alloys of InxSe1-x were prepared by quenching technique withdifferent In content (x=10, 20, 30, and 40). Thin films of these alloyswere prepared using thermal evaporation technique under vacuum of10-5 mbar on glass, at room temperature R.T with differentthicknesses (t=300, 500 and 700 nm). The X–ray diffractionmeasurement for bulk InxSe1-x showed that all alloys havepolycrystalline structures and the peaks for x=10 identical with Se,while for x=20, 30 and 40 were identical with the Se and InSestandard peaks. The diffraction patterns of InxSe1-x thin film showthat with low In content (x=10, and 20) samples have semicrystalline structure, The increase of indium content to x=30decreases degree of crystallinity and further increase of indiumcontent to x=40 leads to convert structure to amorphous. Increase ofthickness from 300 to 700nm increases degree of crystallinity for allindium content. Transmittance measurements were used to calculaterefractive index n and the extinction coefficient k using Swanepole’smethod. The optical constants such as refractive index (n), extinctioncoefficient (k) and dielectric constant (εr, εi) increases for low indiumcontent samples and decreases for high indium content samples,while increase of thickness increases optical constants for all xvalues. The oscillator energy E0, dispersion energy Ed, and otherparameters have been determined by Wemple - DiDomenico singleoscillator approach.

Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

2004 ◽  
Vol 468 (1-2) ◽  
pp. 316-321 ◽  
Author(s):  
Teresa Oh ◽  
Kyoung Suk Oh ◽  
Kwang-Man Lee ◽  
Chi Kyu Choi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Hydrogen Bonds ◽  
Diffraction Pattern ◽  
X Ray Diffraction ◽  
X Ray

TRANSPORT PROPERTIES OF THERMALLY EVAPORATED In2Se3 THIN FILMS

2009 ◽  
Vol 16 (05) ◽  
pp. 723-729 ◽  
Author(s):  
D. NITHYAPRAKASH ◽  
B. PUNITHAVENI ◽  
J. CHANDRASEKARAN
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ac Conductivity ◽  
Thermal Evaporation ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Cbh Model ◽  
X Ray ◽  
Correlated Barrier Hopping ◽  
Tan Δ

Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as-grown films were amorphous in nature and became polycrystalline γ-In2Se3 films after annealing. The ac conductivity and dielectric properties of In2Se3 films have been investigated in the frequency range 100 Hz–100 kHz. The ac conductivity σ ac is found to be proportional to ωn where n < 1. The temperature dependence of both ac conductivity and the parameter n is reasonably well interpreted by the correlated barrier hopping (CBH) model. The values of dielectric constant ε and loss tangent tan δ were found to increase with frequency and temperature. The ac conductivity of the films was found to be hopping mechanism. In I–V characteristic for different field and temperature were studied and it has been found that the conduction process is Poole–Frenkel type.

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

2012 ◽  
Vol 485 ◽  
pp. 144-148
Author(s):  
Jian Lin Chen ◽  
Yan Jie Ren ◽  
Jian Chen ◽  
Jian Jun He ◽  
Ding Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Doping Concentration ◽  
Doped Zno ◽  
Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

scholarly journals The Effect of Annealing Temperature on Structural and Solid State Properties of Aluminium Zinc Oxide (AlZnO) Deposited by Chemical Bath technique

2021 ◽  
Vol 6 (1) ◽  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Refractive Index ◽  
Solid State ◽  
Annealing Temperature ◽  
Deposition Technique ◽  
X Ray ◽  
Different Characteristics ◽  
Constant Refractive Index

In this work, we studied the effect of annealing temperature on the structural and solid state properties of AlZnO thin films using Chemical bath deposition technique. The thin films grown was annealed at various temperatures of 100oC, 150oC to 200oC The morphological and structural properties were studied using XRD and SEM, while the optical properties were studied using UVVIS Spectroscopy from where the bad gap, dielectric constant, refractive index, extinction coefficient and optical conductivity were deduced from the theoretical equations.From the result, it is observed that there is effect of annealing temperature on these properties such that the grain size and x-ray characteristics depicted different characteristics at these various temperatures.

scholarly journals Effect of Indium Doping on the Structural and Optical Properties of CdO thin films

2019 ◽  
Vol 24 (3) ◽  
pp. 84
Author(s):  
Muthanna K. Mahmood1 ◽  
Hanan R. A. Ali1 ◽  
Khudheir A. Mishjil2
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Doping Concentration ◽  
Energy Gap ◽  
Mean Square ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Indium Doping ◽  
Cdo Thin Films

The aim of this study is to investigate the effect of indium doping on structural and optical characteristics of CdO thin films prepared by spray pyrolysis. According to x-ray diffraction analysis, the studied samples are polycrystalline with preferred orientation along (111) orientation. The surface topography determined by AFM and SEM indicates that the surface roughness and root mean square (RMS) values were increased as the indium doping concentration increased. The determinedoptical energy gap were found to lie between (2.47-2.84)eV.   http://dx.doi.org/10.25130/tjps.24.2019.051

Sintering, Microstructure and Electrical Properties of MnO2 and CuO-Doped [Na0.515K0.485]0.94Li0.06(Nb0.99Ta0.01)O3 Ceramics

2013 ◽  
Vol 770 ◽  
pp. 258-261
Author(s):  
Pornsuda Bomlai
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Room Temperature ◽  
Secondary Recrystallization ◽  
Lead Free ◽  
Reaction Sintering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Doping ◽  
Sintering Method

Ceramics with formula (1-x-y)[Na0.515K0.485]0.94Li0.06(Nb0.99Ta0.01)O3 (NKLNT) xMnO2yCuO (when x, y = 0, 0.005 and 0.01) were prepared by a reaction sintering method. The effects of doping level on sinterability and properties of NKLNT ceramics were studied. The results indicated that the co-doping of MnO2 and CuO was effective in promoting the densification of ceramics. Grain growth during secondary recrystallization was also affected, leading to larger grain size with x, y = 0.01 sample. X-ray diffraction data showed that the orthorhombic tetragonal morphotropic phase boundary existed in all the samples. At room temperature, the dielectric properties of NKLNT ceramics were improved by doping of appropriate MnO2 and CuO content. The temperature dependence of dielectric constant showed a decrease slightly in Curie temperature (TC) with increasing MnO2 and CuO content. The composition with x = 0.005, y = 0 exhibited favorable properties for the promising lead-free piezoelectric candidate material.

Effect of the La3+-Doping Concentration on the Properties of TiO2 Thin Films by Sol-Gel Process

2014 ◽  
Vol 1082 ◽  
pp. 451-454
Author(s):  
Tao Bai ◽  
Shi Gen Zhu
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Dip Coating ◽  
Significant Weight Loss ◽  
Titanium Tetraisopropoxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process ◽  
Rare Earth La

Various rare earth (La3+) doped titaniumdioxide(TiO2) thin films (La3+-doped TiO2) have been successfully prepared on a glass substrate by a sol–gel dip coating route using titanium tetraisopropoxide and lanthanum chloride as the initial materials. After the La3+-doped TiO2 thin films were calcined at 500°C for 1h, the effect of La3+-doping on the properties of films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and thermogravimetric- differential scanning calorimeter techniques (TG/DTG). The XRD results showed that all La3+-doped TiO2 thin films contained only a single crystalline phase of anatase TiO2 after calcining at 500°C for 1h. Moreover, the XRD results also revealed that the crystallinity and crystalline size decreased with increased La3+-doping. SEM micrographs showed that all La3+- doped TiO2 thin films have smooth surfaces containing granular nanocrystallines and are without cracks. TG/DTG measurement showed that there was a significant weight loss of the TiO2 precursor calcined in the temperature range from ambient to 660 °C, which was due to the volatilizing of water and organic and the phase transformation.

Effects of Fe and Ni Co-Doping on the Optical Properties of TiO2 Thin Films

2019 ◽  
Vol 19 (01) ◽  
pp. 1850046
Author(s):  
Mahboubeh Yeganeh ◽  
Maliheh Mousavi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Vacancies ◽  
Visible Region ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Co Doping ◽  
Uv Visible

In this work, the effects of Fe/Ni co-doping on structural and optical properties of TiO2 thin films were investigated by the X-ray diffraction, scanning electron microscope and UV-visible spectroscopy. The optical properties of transmittance, extinction coefficient, refractive index, real and imaginary parts of dielectric constant of the thin films, prepared by spray pyrolysis, revealed that the absorption in visible region increases due to the influence of Fe/Ni co-doping. The widening of the gap energies is observed as a result of doping. The increased optical gap as a consequence of doping can be explained by decreasing the size of nanoparticles, as confirmed by SEM and increasing the formation of oxygen vacancies as a result of Ni[Formula: see text] substitution to Ti[Formula: see text] and appearance of the Burstein–Moss effect.

scholarly journals Ta Doping Effect on Structural and Optical Properties of InTe Thin Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1887
Author(s):  
Chunmin Liu ◽  
Yafei Yuan ◽  
Xintong Zhang ◽  
Jing Su ◽  
Xiaoxiao Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Doping Concentration ◽  
Photon Absorption ◽  
X Ray Diffraction ◽  
Linear Absorption ◽  
X Ray ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Ta Doping

The objective of this work was to study the influence of Ta doping on the structural, transmittance properties, linear absorption parameter, and nonlinear absorption properties of InTe thin films. The as-deposited samples with different Ta doping concentrations were prepared by a magnetron co-sputtering technique and then annealed in nitrogen atmosphere. Structural investigations by X-ray diffraction revealed the tetragonal structure of InTe samples and that the crystallinity decreases with increasing Ta doping concentration. Further structural analysis by Raman spectra also showed good agreement with X-ray diffraction results. The Ta doping concentration and sample thickness determined by energy-dispersive X-ray spectroscopy and scanning electron microscopy increased as Ta dopant increased. In addition, X-ray photoelectron spectroscopic was carried out to analyze the chemical states of the elements. UV–VIS–NIR transmittance spectra were applied to study the transmittance properties and calculate the linear absorption coefficient. Due to Burstein–Moss effect, the absorption edge moved to shorter wavelengths. Meanwhile, the values of band gap were found to increase from 1.71 ± 0.02 eV to 1.85 ± 0.01 eV with the increase of Ta doping concentration. By performing an open aperture Z-scan technique, we found that all Ta-doped InTe samples exhibited two-photon absorption behaviors. The nonlinear optical absorption parameters, such as modulation depth, two-photon absorption coefficient, and two-photon absorption cross-section, decrease with increasing Ta concentration, whereas the damage threshold increases from 176 ± 0.5 GW/cm2 to 242 ± 0.5 GW/cm2. These novel properties show the potential for applications in traditional optoelectronic devices and optical limiters.

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