A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDER

2013 ◽  
Vol 12 (02) ◽  
pp. 1350011
Author(s):  
JAYRAM SHRIVAS ◽  
SHYAM AKASHE ◽  
NITESH TIWARI
Keyword(s):  
Leakage Current ◽  
Power Supply ◽  
Low Voltage ◽  
Full Adder ◽  
Leakage Power ◽  
Power Gating ◽  
Sleep Transistors ◽  
Power Application ◽  
High Level ◽  
Standby Mode

Optimization of power is a very important issue in low-voltage and low-power application. In this paper, we have proposed power gating technique to reduce leakage current and leakage power of one-bit full adder. In this power gating technique, we use two sleep transistors i.e., PMOS and NMOS. PMOS sleep transistor is inserted between power supply and pull up network. And NMOS sleep transistor is inserted between pull down network and ground terminal. These sleep transistors (PMOS and NMOS) are turned on when the circuit is working in active mode. And sleep transistors (PMOS and NMOS) are turned off when circuit is working in standby mode. We have simulated one-bit full adder and compared with the power gating technique using cadence virtuoso tool in 45 nm technology at 0.7 V at 27°C. By applying this technique, we have reduced leakage current from 2.935 pA to 1.905 pA and leakage power from 25.04μw to 9.233μw. By using this technique, we have reduced leakage power up to 63.12%.

scholarly journals Forced stack sleep transistor (FORTRAN): A new leakage current reduction approach in CMOS based circuit designing

2021 ◽  
Vol 34 (2) ◽  
pp. 259-280
Author(s):  
Sankit Kassa ◽  
Neeraj Misra ◽  
Rajendra Nagaria
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Power Efficiency ◽  
High Performance ◽  
Low Voltage ◽  
Full Adder ◽  
Leakage Power ◽  
Modes Of Operation ◽  
Power Circuit ◽  
Current Reduction

Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low-voltage, and high-performance VLSI applications. This research article discusses a new low-power circuit design the approach of FORTRAN (FORced stack sleep TRANsistor), which decreases the leakage power efficiency in the CMOS-based circuit outline in VLSI domain. FORTRAN approach reduces leakage current in both active as well as standby modes of operation. Furthermore, it is not time intensive when the circuit goes from active mode to standby mode and vice-versa. To validate the proposed design approach, experiments are conducted in the Tanner EDA tool of mentor graphics bundle on projected circuit designs for the full adder, a chain of 4-inverters, and 4- bit multiplier designs utilizing 180nm, 130nm, and 90nm TSMC technology node. The outcomes obtained show the result of a 95-98% vital reduction in leakage power as well as a 15-20% reduction in dynamic power with a minor increase in delay. The result outcomes are compared for accuracy with the notable design approaches that are accessible for both active and standby modes of operation.

scholarly journals Ultra-Low-Voltage Self-Body Biasing Scheme and Its Application to Basic Arithmetic Circuits

VLSI Design ◽  
2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
Ramiro Taco ◽  
Marco Lanuzza ◽  
Domenico Albano
Keyword(s):  
Low Voltage ◽  
Temperature Fluctuations ◽  
Process Variations ◽  
Full Adder ◽  
Leakage Power ◽  
Dynamic Threshold ◽  
Silicon Area ◽  
Body Biasing ◽  
Cmos Design ◽  
High Level

The gate level body biasing (GLBB) is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS) circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.

scholarly journals An Efficient Power Optimized 32 bit BCD Adder Using Multi-Channel Technique

2017 ◽  
Vol 6 (02) ◽  
pp. 07-12
Author(s):  
Diksha Siddhamshittiwar
Keyword(s):  
Average Power ◽  
Full Adder ◽  
Deep Submicron ◽  
Power Reduction ◽  
Vlsi Circuits ◽  
Power Gating ◽  
Static Power ◽  
Simulation Results ◽  
Efficient Power ◽  
Standby Mode

Static power reduction is a challenge in deep submicron VLSI circuits. In this paper 28T full adder circuit, 14T full adder circuit and 32 bit power gated BCD adder using the full adders respectively were designed and their average power was compared. In existing work a conventional full adder is designed using 28T and the same is used to design 32 bit BCD adder. In the proposed architecture 14T transmission gate based power gated full adder is used for the design of 32 bit BCD adder. The leakage supremacy dissipated during standby mode in all deep submicron CMOS devices is reduced using efficient power gating and multi-channel technique. Simulation results were obtained using Tanner EDA and TSMC_180nm library file is used for the design of 28T full adder, 14T full adder and power gated BCD adder and a significant power reduction is achieved in the proposed architecture.

DESIGN OF LOW POWER 14T FULL ADDER CELL USING DOUBLE GATE MOSFET WITH MTCMOS REDUCTION TECHNIQUE AT 45 NANOMETER TECHNOLOGY

2013 ◽  
Vol 12 (06) ◽  
pp. 1350042
Author(s):  
ANUJ KUMAR SHRIVASTAVA ◽  
SHYAM AKASHE
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
Full Adder ◽  
Basic Block ◽  
Double Gate ◽  
Arithmetic Circuit ◽  
Double Gate Mosfet ◽  
Rf Devices ◽  
Power Application ◽  
Circuit Technique

Full adder is the basic block of arithmetic circuit found in microcontroller and microprocessor inside arithmetic and logic unit (ALU). Improving the performance of the adder is essential for upgrading the performance of digital electronics circuit where adder is employed. In this paper, a single bit full adder circuit has been designed with the help of double gate (MOSFET), the used parameters value has been varied significantly for improving the performance of full adder circuit. Double gate transistor circuit considers as a promising candidate for low power application domain as well as used in radio frequency (RF) devices. Multi-threshold CMOS (MTCMOS) is the most used circuit technique to reduce the leakage current in idle circuit. In this paper, different parameters are analyzed on MTCMOS Technique. MTCMOS technique achieves 99.6% reduction of leakage current, active power is reduced by 42.64% and delay is reduced by 71.9% as compared with conventional double gate 14T full adder. Simulation results of double gate full adder have been performed on cadence virtuoso tool with 45 nm technology.

scholarly journals Ultra-Low Leakage Arithmetic Circuits Using Symmetric and Asymmetric FinFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-13 ◽  
Author(s):  
Farid Moshgelani ◽  
Dhamin Al-Khalili ◽  
Côme Rozon
Keyword(s):  
Work Function ◽  
Leakage Current ◽  
Power Supply ◽  
Full Adder ◽  
Arithmetic Circuits ◽  
University Of Florida ◽  
Low Leakage ◽  
The University

We are examining different configurations and circuit topologies for arithmetic components such as adder and compressor circuits using both symmetric and asymmetric work-function FinFETs. Based on extensive characterization data, for the carry generation of a mirror full adder using symmetric devices, both leakage current and delay are decreased by 25% and 50%, respectively, compared to results in the literature. For the 14-transistor (14T) full adder topology, both leakage and delay are decreased by 23% and 29%, respectively, compared to the mirror topology. The 14T adder topology, using asymmetric devices without any additional power supply, achives reduction in leakage current by 85% with a small degradation of 7% in delay. The compressor circuits, using asymmetric devices for one of the proposed configurations, achieve reduction in both leakage current and delay by 86% and 4%, respectively. All simulations are based on a 25 nm FinFET technology using the University of Florida UFDG model.

scholarly journals Design of Low Leakage Arithmetic Logic circuit Using Efficient Power Gating Schemes

2019 ◽  
Vol 7 (3) ◽  
pp. 11-18
Author(s):  
Yogesh Kulshethra ◽  
Manish Kule
Keyword(s):  
Leakage Current ◽  
Supply Voltage ◽  
Leakage Power ◽  
Power Gating ◽  
Design Constraint ◽  
Analysis And Design ◽  
Complex Arithmetic ◽  
Look Ahead ◽  
Simulation Results ◽  
Gating Scheme

As technology scales towards nanometer regime the leakage power consumption emerging as a major design constraint for the analysis and design of complex arithmetic logic circuits. In this paper, comparative analysis of standby leakage current and sleep to active mode transition leakage current has been done. An innovative power gating approaches is also analyzed which targets maximum reduction of major leakage current. To analyze we introduce the stacking power gating scheme, we implemented this scheme on carry look ahead adder circuit and then simulation has been done using stacking power gating scheme with 45nm technology parameters. The simulation results by using this scheme in BPTM 45nm technology with supply voltage of 0.9V at room temperature shows that leakage reduction can be improved by 47.14% as on comparison with single transistor gating scheme on comparing with conventional scheme Also, another novel approach has been analyzed with diode based stacking power gating scheme for further reduction in leakage power. The simulation results depicts that the analyzed design leads to efficient carry look ahead adder circuit in terms of leakage power, active power and delay.

Hybrid Approach of Within-Clock Power Gating and Normal Power Gating to Reduce Power

2016 ◽  
Vol 25 (05) ◽  
pp. 1650044 ◽  
Author(s):  
Debanjali Nath ◽  
Priyanka Choudhury ◽  
Sambhu Nath Pradhan
Keyword(s):  
Power Supply ◽  
Critical Path ◽  
Hybrid Approach ◽  
Leakage Power ◽  
Total Power ◽  
Power Gating ◽  
Path Delay ◽  
Clock Period ◽  
Finite State ◽  
A New Technique

Power gating (PG) is used to reduce leakage power by shutting down the power supply of the inactive block of the circuit. PG technique for finite state machine (FSM) is used to reduce not only leakage power but also the switching power of circuit. One FSM is partitioned into two sub-FSMs and encoded for minimizing total power for the power-gated design of the circuit. Depending on the state of the machine, at a time one sub-FSM is power gated by shutting off the power supply. There is a complete eradication of power in power-gated sub-FSM, but another one is in an active mode that continues to dissipate power. There is a scope to reduce leakage in active sub-FSM if the clock period is larger than the critical path delay of the combinational part of this sub-FSM. In this condition, there is a certain portion of the clock period which is idle and in this period PG may be used. The objective of this paper is to reduce power by applying PG at circuit level to the active sub-FSM, whereas, inactive sub-FSM is still power gated. This paper presents a new technique, called WCPG_IN_PG, which reduces the power of active sub-FSM (within the clock period) and power-gated FSM. By varying the frequency, power results are reported for different input combinations.

A Power-Gating Scheme for MCML Circuits with Separable-Sizing Sleep Transistors

2014 ◽  
Vol 8 (1) ◽  
pp. 306-315
Author(s):  
Yeliang Geng ◽  
Jianping Hu ◽  
Kaiyu Zou
Keyword(s):  
Current Mode ◽  
Full Adder ◽  
Threshold Power ◽  
High Threshold ◽  
Power Gating ◽  
Power Efficient ◽  
Current Mode Logic ◽  
Micro Power ◽  
Sleep Transistors ◽  
Gating Scheme

Power-efficient designs are essential for micro-power sensor systems. This paper presents a power-gating scheme for MCML (MOS Current Mode Logic) circuits with separable-sizing sleep transistors. In the proposed scheme, two high-threshold power-gating transistors are inserted between load transistors and outputs of the MCML circuits. The widths and lengths of sleep transistors in power-gated blocks are separately adjusted, which are independent of the bias circuit. Basic cells and a 1-bit full adder are used to verify the correctness of the proposed scheme. The power consuming comparisons between conventional MCML and proposed power-gating MCML circuits are carried out. The 1-bit MCML full adder based on the proposed scheme nearly saves 36% of energy dissipations with respect to no-power-gating MCML one, for a power-gating activity of 0.6. Moreover, the proposed power-gating MCML circuit also has a great advantage in power dissipations in high frequency regions compared with the power-gating static CMOS ones. The power consumption of the MCML 1-bit full adder based on the proposed scheme is 63.2%, 44.8%, and 36.97% compared with the powergating static CMOS one when the operating frequency is 1GHz, 1.5GHz, and 2GHz, respectively.

Performance Analysis of Leakage Current Reduction in Standby Mode of Zigbee SoC Using Active Mode Logic

2018 ◽  
Vol 15 (2) ◽  
pp. 525-529 ◽  
Author(s):  
K. Parthiban ◽  
S. Sasikumar
Keyword(s):  
Leakage Current ◽  
Power Supply ◽  
Data Security ◽  
High Speed ◽  
Wireless Sensor ◽  
Active Mode ◽  
High Efficient ◽  
Current Reduction ◽  
Standby Mode ◽  
Speed Grade

Zigbee SoC plays an important role in transferring and receiving the data in wireless sensor networks for its data security and high speed grade. The active mode of Zigbee SoC consumes power from power supply directly and standby mode of Zigbee SoC consumes no power from the power supply unit. There may be a leakage current in standby mode of the circuit which further linearly degrades the performance of the Zigbee SoC. This paper proposes a low power and high efficient active mode logic of the power gating methodology in Zigbee SoC to reduce the leakage current. The circuit in proposed Zigbee SoC has less number of transistors than the conventional methodology and hence the proposed system has low delay as 2.29 * 10–8 ms.

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