scholarly journals Design of Low Leakage Arithmetic Logic circuit Using Efficient Power Gating Schemes

2019 ◽  
Vol 7 (3) ◽  
pp. 11-18
Author(s):  
Yogesh Kulshethra ◽  
Manish Kule
Keyword(s):  
Leakage Current ◽  
Supply Voltage ◽  
Leakage Power ◽  
Power Gating ◽  
Design Constraint ◽  
Analysis And Design ◽  
Complex Arithmetic ◽  
Look Ahead ◽  
Simulation Results ◽  
Gating Scheme

As technology scales towards nanometer regime the leakage power consumption emerging as a major design constraint for the analysis and design of complex arithmetic logic circuits. In this paper, comparative analysis of standby leakage current and sleep to active mode transition leakage current has been done. An innovative power gating approaches is also analyzed which targets maximum reduction of major leakage current. To analyze we introduce the stacking power gating scheme, we implemented this scheme on carry look ahead adder circuit and then simulation has been done using stacking power gating scheme with 45nm technology parameters. The simulation results by using this scheme in BPTM 45nm technology with supply voltage of 0.9V at room temperature shows that leakage reduction can be improved by 47.14% as on comparison with single transistor gating scheme on comparing with conventional scheme Also, another novel approach has been analyzed with diode based stacking power gating scheme for further reduction in leakage power. The simulation results depicts that the analyzed design leads to efficient carry look ahead adder circuit in terms of leakage power, active power and delay.

scholarly journals OPTIMAL DESIGN FOR GROUND BOUNCE NOISE REDUCTION USING SLEEP TRANSISTOR

2012 ◽  
pp. 110-116
Author(s):  
P. Sreenivasulu ◽  
Vasavi Prasanthi Dasari
Keyword(s):  
Noise Immunity ◽  
Supply Voltage ◽  
Full Adder ◽  
Cmos Technology ◽  
Threshold Current ◽  
Active Power ◽  
Leakage Power ◽  
Analysis And Design ◽  
Complex Arithmetic ◽  
Ground Bounce

As technology scales into the nanometer regime ground bounce noise and noise immunity are becoming important metric of comparable importance to leakage current, active power, delay and area for the analysis and design of complex arithmetic logic circuits. In this paper, low leakage 1bit full adder cells are proposed for mobile applications with low ground bounce noise and a novel technique has been introduced with improved staggered phase damping technique for further reduction in the peak of ground bounce noise. Noise immunity has been carefully considered since the significant threshold current of the low threshold voltage transition becomes more susceptible to noise. We introduced a new transistor resizing approach for 1bit full adder cells to determine the optimal sleep transistor size which reduce the leakage power and ground bounce noise. The simulation results depicts that the proposed design also leads to efficient 1bit full adder cells in terms of standby leakage power, active power, ground bounce noise and noise margin. We have performed simulations using Cadence Spectre 90nm standard CMOS technology at room temperature with supply voltage of 1V.

scholarly journals A Novel Cross-Latch Shift Register Scheme for Low Power Applications

2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin
Keyword(s):  
Power Consumption ◽  
Supply Voltage ◽  
Electrical Power ◽  
Average Power ◽  
Leakage Power ◽  
Shift Register ◽  
Cmos Process ◽  
Average Power Consumption ◽  
Simulation Results ◽  
Layout Area

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.

A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDER

2013 ◽  
Vol 12 (02) ◽  
pp. 1350011
Author(s):  
JAYRAM SHRIVAS ◽  
SHYAM AKASHE ◽  
NITESH TIWARI
Keyword(s):  
Leakage Current ◽  
Power Supply ◽  
Low Voltage ◽  
Full Adder ◽  
Leakage Power ◽  
Power Gating ◽  
Sleep Transistors ◽  
Power Application ◽  
High Level ◽  
Standby Mode

Optimization of power is a very important issue in low-voltage and low-power application. In this paper, we have proposed power gating technique to reduce leakage current and leakage power of one-bit full adder. In this power gating technique, we use two sleep transistors i.e., PMOS and NMOS. PMOS sleep transistor is inserted between power supply and pull up network. And NMOS sleep transistor is inserted between pull down network and ground terminal. These sleep transistors (PMOS and NMOS) are turned on when the circuit is working in active mode. And sleep transistors (PMOS and NMOS) are turned off when circuit is working in standby mode. We have simulated one-bit full adder and compared with the power gating technique using cadence virtuoso tool in 45 nm technology at 0.7 V at 27°C. By applying this technique, we have reduced leakage current from 2.935 pA to 1.905 pA and leakage power from 25.04μw to 9.233μw. By using this technique, we have reduced leakage power up to 63.12%.

scholarly journals Analysis of CMOS Comparator in 90nm Technology with Different Power Reduction Techniques

2018 ◽  
Vol 8 (6) ◽  
pp. 4922
Author(s):  
Anil Khatak ◽  
Manoj Kumar ◽  
Sanjeev Dhull
Keyword(s):  
Power Consumption ◽  
Leakage Current ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Power Reduction ◽  
Total Power ◽  
Low Power Consumption ◽  
Power Gating ◽  
Reduction Techniques ◽  
Total Power Consumption

To reduce power consumption of regenerative comparator three different techniques are incorporated in this work. These techniques provide a way to achieve low power consumption through their mechanism that alters the operation of the circuit. These techniques are pseudo NMOS, CVSL (cascode voltage switch logic)/DCVS (differential cascode voltage switch) & power gating. Initially regenerative comparator is simulated at 90 nm CMOS technology with 0.7 V supply voltage. Results shows total power consumption of 15.02 μW with considerably large leakage current of 52.03 nA. Further, with pseudo NMOS technique total power consumption increases to 126.53 μW while CVSL shows total power consumption of 18.94 μW with leakage current of 1270.13 nA. More then 90% reduction is attained in total power consumption and leakage current by employing the power gating technique. Moreover, the variations in the power consumption with temperature is also recorded for all three reported techniques where power gating again show optimum variations with least power consumption. Four more conventional comparator circuits are also simulated in 90nm CMOS technology for comparison. Comparison shows better results for regenerative comparator with power gating technique. Simulations are executed by employing SPICE based on 90 nm CMOS technology.

MODELING AND ANALYSIS OF LOW POWER 10 T FULL ADDER WITH REDUCED GROUND BOUNCE NOISE

2014 ◽  
Vol 23 (01) ◽  
pp. 1450005 ◽  
Author(s):  
RAGHVENDRA SINGH ◽  
SHYAM AKASHE
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Performance ◽  
Digital Circuits ◽  
Arithmetic Operation ◽  
Full Adder ◽  
Leakage Power ◽  
Modeling And Analysis ◽  
Complex Arithmetic ◽  
Ground Bounce

In the design of high performance complex arithmetic logic circuits, ground bounce noise, leakage current and leakage power are important and challenging issues in nanometer down scaling. In this paper, the low power and reduced ground bounce noise using 10 transistor full adder has been proposed. Full adder is the most important basic building of digital circuits employing arithmetic operation. Adder circuit is widely used in many digital circuits not only for arithmetic operation but also for address generation in processors and microcontrollers. It is therefore necessary to make these systems more efficient so that they consume less power. Here, we use stacking power gating technique to evaluate leakage current, power and ground bounce noise. This paper describes reduction of leakage power and ground bounce noise from the 10 T full adder circuits to make it more reliable to be used to have low power and stable and errorless output. All the simulation in this paper has been carried out using cadence virtuoso at 45 nm technology at various voltages and various temperatures. By using this technique the leakage current reduction can be improved by 80% and leakage power to 70% as compared to conventional 10 T full adder. Ground bounce noise can be reduced to 60% as compared to the base full adder.

scholarly journals Review a Low Power CMOS Charge Pump using Power Gating Techniques to Reduce Leakage Power

2018 ◽  
Vol 7 (3.1) ◽  
pp. 27
Author(s):  
Vengadeswari N ◽  
Priscilla Whitin
Keyword(s):  
Supply Voltage ◽  
Charge Pump ◽  
Major Elements ◽  
Leakage Power ◽  
Power Gating ◽  
Charge Pumps ◽  
Pumping Efficiency ◽  
Low Power Cmos ◽  
Two Parameters ◽  
Charge Pump Circuit

In most case, charge pump circuit is designed based on capacitor, where voltage is increased at each stage depending on each stage voltage gain. Major elements are all charge pumps circuits one is Pumping capacitors and diode connected MOS.To increases pumping efficiency is very higher for each stage of charge pump circuits. Pumping efficiency are limiting by two parameters one is parasitic capacitance and threshold voltage. The power dissipated from the circuit can be increased by attain of leakage current .To resist this leakage in the circuits the supply voltage is major concern. To reduce the leakage with the help of power gating technique .Charge pump circuits are to be designed and verified by using tanner t-spice tools. 

scholarly journals 3D Simulation-Based Acoustic Wave Resonator Analysis and Validation Using Novel Finite Element Method Software

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2715
Author(s):  
Ruth Yadira Vidana Morales ◽  
Susana Ortega Cisneros ◽  
Jose Rodrigo Camacho Perez ◽  
Federico Sandoval Ibarra ◽  
Ricardo Casas Carrillo
Keyword(s):  
Finite Element ◽  
High Performance ◽  
Cloud Services ◽  
3D Simulation ◽  
3D Simulations ◽  
Acoustic Resonators ◽  
Analysis And Design ◽  
Wave Resonator ◽  
Film Bulk ◽  
Simulation Results

This work illustrates the analysis of Film Bulk Acoustic Resonators (FBAR) using 3D Finite Element (FEM) simulations with the software OnScale in order to predict and improve resonator performance and quality before manufacturing. This kind of analysis minimizes manufacturing cycles by reducing design time with 3D simulations running on High-Performance Computing (HPC) cloud services. It also enables the identification of manufacturing effects on device performance. The simulation results are compared and validated with a manufactured FBAR device, previously reported, to further highlight the usefulness and advantages of the 3D simulations-based design process. In the 3D simulation results, some analysis challenges, like boundary condition definitions, mesh tuning, loss source tracing, and device quality estimations, were studied. Hence, it is possible to highlight that modern FEM solvers, like OnScale enable unprecedented FBAR analysis and design optimization.

scholarly journals Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1718
Author(s):  
Neha Gupta ◽  
Ambika Prasad Shah ◽  
Sajid Khan ◽  
Santosh Kumar Vishvakarma ◽  
Michael Waltl ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Leakage Power ◽  
Functional Improvement ◽  
Scaling Technique ◽  
Iot Applications ◽  
Sram Cell ◽  
Improved Stability ◽  
Supply Voltage Scaling ◽  
Power Delay Product

This paper proposes an error-tolerant reconfigurable VDD (R-VDD) scaled SRAM architecture, which significantly reduces the read and hold power using the supply voltage scaling technique. The data-dependent low-power 10T (D2LP10T) SRAM cell is used for the R-VDD scaled architecture with the improved stability and lower power consumption. The R-VDD scaled SRAM architecture is developed to avoid unessential read and hold power using VDD scaling. In this work, the cells are implemented and analyzed considering a technologically relevant 65 nm CMOS node. We analyze the failure probability during read, write, and hold mode, which shows that the proposed D2LP10T cell exhibits the lowest failure rate compared to other existing cells. Furthermore, the D2LP10T cell design offers 1.66×, 4.0×, and 1.15× higher write, read, and hold stability, respectively, as compared to the 6T cell. Moreover, leakage power, write power-delay-product (PDP), and read PDP has been reduced by 89.96%, 80.52%, and 59.80%, respectively, compared to the 6T SRAM cell at 0.4 V supply voltage. The functional improvement becomes even more apparent when the quality factor (QF) is evaluated, which is 458× higher for the proposed design than the 6T SRAM cell at 0.4 V supply voltage. A significant improvement of power dissipation, i.e., 46.07% and 74.55%, can also be observed for the R-VDD scaled architecture compared to the conventional array for the respective read and hold operation at 0.4 V supply voltage.

scholarly journals An Efficient Power Optimized 32 bit BCD Adder Using Multi-Channel Technique

2017 ◽  
Vol 6 (02) ◽  
pp. 07-12
Author(s):  
Diksha Siddhamshittiwar
Keyword(s):  
Average Power ◽  
Full Adder ◽  
Deep Submicron ◽  
Power Reduction ◽  
Vlsi Circuits ◽  
Power Gating ◽  
Static Power ◽  
Simulation Results ◽  
Efficient Power ◽  
Standby Mode

Static power reduction is a challenge in deep submicron VLSI circuits. In this paper 28T full adder circuit, 14T full adder circuit and 32 bit power gated BCD adder using the full adders respectively were designed and their average power was compared. In existing work a conventional full adder is designed using 28T and the same is used to design 32 bit BCD adder. In the proposed architecture 14T transmission gate based power gated full adder is used for the design of 32 bit BCD adder. The leakage supremacy dissipated during standby mode in all deep submicron CMOS devices is reduced using efficient power gating and multi-channel technique. Simulation results were obtained using Tanner EDA and TSMC_180nm library file is used for the design of 28T full adder, 14T full adder and power gated BCD adder and a significant power reduction is achieved in the proposed architecture.

scholarly journals Analysis On Power Gating Circuits Based Low Power VLSI Circuits (BCD Adder)

2021 ◽  
Vol 2089 (1) ◽  
pp. 012080
Author(s):  
M. Srinivas ◽  
K.V. Daya Sagar
Keyword(s):  
Energy Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Leakage Power ◽  
Vlsi Circuits ◽  
Battery Life

Abstract Currently, energy consumption in the digital circuit is a key design parameter for emerging mobile products. The principal cause of the power dissipation during idle mode is leakage currents, which are rising dramatically. Sub-threshold leakage is increased by the scaling of threshold voltage when gate current leakage increases because oxide thickness is scaled. With rising demands for mobile devices, leakage energy consumption has received even greater attention. Since a mobile device spends most of its time in standby mode, leakage power savings need to prolong the battery life. That is why low power has become a significant factor in CMOS circuit design. The required design and simulation of an AND gate with the BSIM4 MOS parameter model at 27 0C, supply voltage of 0,70V with CMOS technology of 65nm are the validation of the suitability of the proposed circuit technology. AND simulation. The performance parameters for the two AND input gate are compared with the current MTCMOS and SCCMOS techniques, such as sub-threshold leakage power dissipations in active and standby modes, the dynamic dissipation, and propagation period. The proposed hybrid super cutoff complete stack technique compared to the current MTCMOS technology shows a reduction in sub-threshold dissipation power dissipation by 3. 50x and 1.15x in standby modes and active modes respectively. The hybrid surface-cutting technique also shows savings of 2,50 and 1,04 in power dissipation at the sub-threshold in standby modes and active modes compared with the existing SCCMOS Technique.

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