scholarly journals Plasma and BIAS Modeling: Self-Consistent Electrostatic Particle-in-Cell with Low-Density Argon Plasma for TiC

2011 ◽  
Vol 2011 ◽  
pp. 1-13
Author(s):  
Jürgen Geiser ◽  
Sven Blankenburg
Keyword(s):  
Physical Vapor Deposition ◽  
Cell Model ◽  
Finite Size ◽  
Argon Plasma ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Low Density ◽  
Particle In Cell ◽  
Self Consistent

We motivate our study by simulating the particle transport of a thin film deposition process done by PVD (physical vapor deposition) processes. In this paper we present a new model taken into account a self-consistent electrostatic-particle in cell model with low density Argon plasma. The collision model are based of Monte Carlo simulations is discussed for DC sputtering in lower pressure regimes. In order to simulate transport phenomena within sputtering processes realistically, a spatial and temporal knowledge of the plasma density and electrostatic field configuration is needed. Due to relatively low plasma densities, continuum fluid equations are not applicable. We propose instead a Particle-in-cell (PIC) method, which allows the study of plasma behavior by computing the trajectories of finite-size particles under the action of an external and self-consistent electric field defined in a grid of points.

scholarly journals Controlling the flux of reactive species: a case study on thin film deposition in an aniline/argon plasma

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
D. Sciacqua ◽  
C. Pattyn ◽  
A. Jagodar ◽  
E. von Wahl ◽  
T. Lecas ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Argon Plasma ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Capacitively Coupled ◽  
Low Temperature Plasmas ◽  
Free Films

Abstract The plasma based synthesis of thin films is frequently used to deposit ultra-thin and pinhole-free films on a wide class of different substrates. However, the synthesis of thin films by means of low temperature plasmas is rather complex due to the great number of different species (neutrals, radicals, ions) that are potentially involved in the deposition process. This contribution deals with polymerization processes in a capacitively coupled discharge operated in a mixture of argon and aniline where the latter is a monomer, which is used for the production of plasma-polymerized polyaniline, a material belonging to the class of conductive polymers. This work will present a particular experimental approach that allows to (partially) distinguish the contribution of different species to the film growth and thus to control to a certain extent the properties of the resulting material. The control of the species flux emerging from the plasma and contributing to the film growth also sheds new light on the deposition process, in particular with respect to the role of the ion component. The analysis of the produced films has been performed by means of Fourier Transform Infrared spectroscopy (FTIR) and Near Edge X-ray Absorption Fine Structure spectroscopy (NEXAFS).

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

scholarly journals Aspects of thin film deposition on granulates by physical vapor deposition

2016 ◽  
Vol 70 (11) ◽  
Author(s):  
Andreas Eder ◽  
Gerwin H.S. Schmid ◽  
Harald Mahr ◽  
Christoph Eisenmenger-Sittner
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thin Film Deposition ◽  
Film Deposition

Spray Pyrolysis Thin Film Deposition Technique for Micro-Sensors and Devices

2020 ◽  
pp. 178-202
Author(s):  
Monoj Kumar Singha ◽  
Vineet Rojwal
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Deposition Technique ◽  
Uv Photodetector ◽  
Spray Process ◽  
Spray Pyrolysis Deposition ◽  
Deposition Techniques

Thin film is used for sensing and electronic devices applications. Various techniques are used for thin film deposition. This chapter presents the Spray pyrolysis deposition technique used for the growth of thin films sensing and device material. Spray pyrolysis is an inexpensive method to grow good crystalline thin film compared to other thin film deposition techniques. The chapter gives an overview of the spray process used for thin film deposition. Basic setup for this process is explained. Parameters affecting the deposition process is explained, as are the various spray methods. Finally, some examples of spray pyrolysis in different applications like a gas sensor, UV photodetector, solar cell, photocatalysis, and supercapacitor are discussed.

Duplex Hard Coatings with Aditional Ion Implantation

2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Scratch Test ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Hard Coatings ◽  
X Ray ◽  
Atomic Force ◽  
Tin Thin Films

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).

scholarly journals Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-Ray Optics

1989 ◽  
Vol 161 ◽  
Author(s):  
J.K. Shurtleff ◽  
D.D. Allred ◽  
R.T. Perkins ◽  
J.M. Thorne
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Atomic Layer Epitaxy ◽  
Ray Optics ◽  
X Ray ◽  
Vapor Deposition Technique ◽  
Number Of Cycles

ABSTRACTThin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques.ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics.We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.

Sign in / Sign up

Export Citation Format

Share Document