scholarly journals A Controllable Constant Power Generator in 0.35 μm CMOS Technology for Thermal-Based Sensor Applications

2018 ◽  
Vol 2018 ◽  
pp. 1-12
Author(s):  
Milena Zogović Erceg
Keyword(s):  
Relative Error ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Load Resistance ◽  
Cmos Technology ◽  
Constant Power ◽  
Power Generator ◽  
Sensor Applications ◽  
Wide Range ◽  
Resistive Loads

A CMOS controllable constant power generator based on multiplier/divider circuit is presented. It generates constant power for a wide range of the resistive loads. For the generated power of 5 mW, and the resistance range from 0.5 kΩ to 1.5 kΩ, the relative error of dissipated power is less than 0.6%. For single supply voltage of 5 V, presented controllable constant power generator generates power from 0.5 mW to 7.8 mW, for the load resistance dynamic range from 3 up to 15, while the relative error of generated power is less than 2%. The frequency bandwidth of the proposed design is up to 5 MHz. Through the detailed analysis of the loop gain, it is shown that the circuit has no stability problems.

scholarly journals An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2551
Author(s):  
Kwang-Il Oh ◽  
Goo-Han Ko ◽  
Jeong-Geun Kim ◽  
Donghyun Baek
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Frequency Divider ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Radar Sensor ◽  
Frequency Locking ◽  
Current Reuse ◽  
Sensor Applications ◽  
Locking Range

An 18.8–33.9 GHz, 2.26 mW current-reuse (CR) injection-locked frequency divider (ILFD) for radar sensor applications is presented in this paper. A fourth-order resonator is designed using a transformer with a distributed inductor for wideband operating of the ILFD. The CR core is employed to reduce the power consumption compared to conventional cross-coupled pair ILFDs. The targeted input center frequency is 24 GHz for radar application. The self-oscillated frequency of the proposed CR-ILFD is 14.08 GHz. The input frequency locking range is from 18.8 to 33.8 GHz (57%) at an injection power of 0 dBm without a capacitor bank or varactors. The proposed CR-ILFD consumes 2.26 mW of power from a 1 V supply voltage. The entire die size is 0.75 mm × 0.45 mm. This CR-ILFD is implemented in a 65 nm complementary metal-oxide semiconductor (CMOS) technology.

A 12-BIT 400-MS/s CURRENT-STEERING DAC WITH DEGLITCHING TECHNIQUE

2014 ◽  
Vol 23 (01) ◽  
pp. 1450004 ◽  
Author(s):  
XIAOBO XUE ◽  
XIAOLEI ZHU ◽  
QIFENG SHI ◽  
LENIAN HE
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Signal Frequency ◽  
Current Steering ◽  
Digital To Analog Converter ◽  
Measurement Results ◽  
Voltage Swing ◽  
Current Steering Dac ◽  
Low Supply Voltage

In this paper, a 12-bit current-steering digital-to-analog converter (DAC) employing a deglitching technique is proposed. The deglitching technique is realized by lowering the voltage swing of the control signal as well as by using a method of glitch counteraction (GC). A new switch–driver structure is designed to enable the effectiveness of the GC and provide sufficient driving capability under a low supply voltage. Moreover, the control signal's rise/fall asymmetry which increases the glitch error can be suppressed by using the proposed switch–driver structure. The 12-bit DAC is implemented in 180 nm CMOS technology. The measurement results show that the spurious free dynamic range (SFDR) at low signal frequency is 78.8 dB, and it is higher than 70 dB up to 60 MHz signal frequency at 400 MS/s. The measured INL and DNL are both less than ±0.6 LSB.

scholarly journals Ladder-Based Synthesis and Design of Low-Frequency Buffer-Based CMOS Filters

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2931
Author(s):  
Waldemar Jendernalik ◽  
Jacek Jakusz ◽  
Grzegorz Blakiewicz
Keyword(s):  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Low Frequency ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Biomedical Sensors ◽  
Filter Synthesis ◽  
Cascade Method

Buffer-based CMOS filters are maximally simplified circuits containing as few transistors as possible. Their applications, among others, include nano to micro watt biomedical sensors that process physiological signals of frequencies from 0.01 Hz to about 3 kHz. The order of a buffer-based filter is not greater than two. Hence, to obtain higher-order filters, a cascade of second-order filters is constructed. In this paper, a more general method for buffer-based filter synthesis is developed and presented. The method uses RLC ladder prototypes to obtain filters of arbitrary orders. In addition, a set of novel circuit solutions with ultra-low voltage and power are proposed. The introduced circuits were synthesized and simulated using 180-nm CMOS technology of X-FAB. One of the designed circuits is a fourth-order, low-pass filter that features: 100-Hz passband, 0.4-V supply voltage, power consumption of less than 5 nW, and dynamic range above 60 dB. Moreover, the total capacitance of the proposed filter (31 pF) is 25% lower compared to the structure synthesized using a conventional cascade method (40 pF).

scholarly journals Receiver Designs for Electronic Toll Collection Systems : A Survey

2020 ◽  
pp. 576-581
Author(s):  
Rarika Ravi ◽  
Anu Assis
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Automatic Gain Control ◽  
Power Level ◽  
Cmos Technology ◽  
Electronic Toll Collection ◽  
Chip Area ◽  
Advantages And Disadvantages ◽  
Digitally Controlled ◽  
Toll Collection

<p>This paper discusses about different receiver designs adopted so far for various electronic toll collection systems. A comparative analysis based on the discussions is also provided. It shows that each design has it's own advantages and disadvantages compared to others. The main aim of this paper is to identify the most suitable design. The researches shows that the receiver design described in the 5.8GHz digitally controlled DSRC receiver for Chinese electronic toll collection system is the most suitable one. Here all RF, IF blocks and digital baseband for on-chip automatic gain control, are integrated on an RF-SoC. The proposed digitally controlled LNA and mixer circuits are elaborated. The technology used is 0.13μm CMOS technology. The RF block occupies a chip area of 0.75mm2. It consumes 22mA under a 1.5V supply voltage. The bit error rate maintains better than 10-6, the input power level varies from -75dBm to -8dBm. This design provides a receiver sensitivity improvement of at least 25%, and a dynamic range enhancement of at least 12%.</p>

scholarly journals A Novel Highly Linear Voltage-To-Time Converter (VTC) Circuit for Time-Based Analog-To-Digital Converters (ADC) Using Body Biasing

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2033
Author(s):  
Ahmed Elgreatly ◽  
Ahmed Dessouki ◽  
Hassan Mostafa ◽  
Rania Abdalla ◽  
El-sayed El-Rabaie
Keyword(s):  
Power Consumption ◽  
Software Defined Radio ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
The Body ◽  
Analog To Digital Converters ◽  
Clock Frequency ◽  
Analog To Digital ◽  
Operation Speed

Time-based analog-to-digital converter is considered a crucial part in the design of software-defined radio receivers for its higher performance than other analog-to-digital converters in terms of operation speed, input dynamic range and power consumption. In this paper, two novel voltage-to-time converters are proposed at which the input voltage signal is connected to the body terminal of the starving transistor rather than its gate terminal. These novel converters exhibit better linearity, which is analytically proven in this paper. The maximum linearity error is reduced to 0.4%. In addition, the input dynamic range of these converters is increased to 800 mV for a supply voltage of 1.2 V by using industrial hardware-calibrated TSMC 65 nm CMOS technology. These novel designs consist of only a single inverter stage, which results in reducing the layout area and the power consumption. The overall power consumption is 18 μW for the first proposed circuit and 15 μW for the second proposed circuit. The novel converter circuits have a resolution of 5 bits and operate at a maximum clock frequency of 500 MHz.

Area-Efficient Capacitor-Splitting Switching Scheme with a Nearly Constant Common-Mode Voltage for SAR ADCs

2019 ◽  
Vol 29 (10) ◽  
pp. 2020005
Author(s):  
Hao Wang ◽  
Wenming Xie ◽  
Zhixin Chen
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Sampling Rate ◽  
Cmos Technology ◽  
Switching Scheme ◽  
Common Mode ◽  
Analog To Digital ◽  
Common Mode Voltage ◽  
Switching Method ◽  
Area Efficient

A novel area-efficient switching scheme is proposed for the successive approximation register (SAR) analog-to-digital converters (ADCs). The capacitor-splitting structure, charge-average switching technique, and [Formula: see text] (equal to [Formula: see text]/4) are combined together and optimized to realize the proposed switching scheme. [Formula: see text] is only used in the last two bit cycles, which affects the ADC accuracy little and reduces capacitor area by half. It achieves a 98% less switching energy and an 87.5% less capacitor area compared with the conventional switching method. In addition, the DAC output common-mode voltage is approximately constant. Thus, the proposed switching method is a good tradeoff among power consumption, capacitor area, DAC output common-mode voltage, and ADC accuracy. The proposed SAR ADC is simulated in 0.18[Formula: see text][Formula: see text]m CMOS technology with a supply voltage of 0.6[Formula: see text]V and at a sampling rate of 20[Formula: see text]kS/s. The signal-to-noise-distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 58.2 and 73.7[Formula: see text]dB, respectively. The effective number of bits (ENOB) is 9.4. It consumes 42[Formula: see text]nW, resulting in a figure-of-merit (FoM) of 3.11 fJ/conversion-step.

LOW VOLTAGE, LOW POWER CHEBYSHEV FILTER IN 0.18 μm CMOS TECHNOLOGY

2013 ◽  
Vol 22 (07) ◽  
pp. 1350053 ◽  
Author(s):  
S. REKHA ◽  
T. LAXMINIDHI
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Transconductance Amplifier ◽  
Low Pass ◽  
Unity Gain ◽  
Design Centering ◽  
Low Supply Voltage

This paper presents an active-RC continuous time filter in 0.18 μm standard CMOS technology intended to operate on a very low supply voltage of 0.5 V. The filter designed, has a 5th order Chebyshev low pass response with a bandwidth of 477 kHz and 1-dB passband ripple. A low-power operational transconductance amplifier (OTA) is designed which makes the filter realizable. The OTA uses bulk-driven input transistors and feed-forward compensation in order to increase the Dynamic Range and Unity Gain Bandwidth, respectively. The paper also presents an equivalent circuit of the OTA and explains how the filter can be modeled using descriptor state-space equations which will be used for design centering the filter in the presence of parasitics. The designed filter offers a dynamic range of 51.3 dB while consuming a power of 237 μW.

The Design of CIFF Structure Three-Order Switched-Capacitor Sigma-Delta Modulator

2012 ◽  
Vol 433-440 ◽  
pp. 5727-5732
Author(s):  
Jun Han ◽  
Wei Dong Wang
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Optimization Technique ◽  
Cmos Technology ◽  
Switched Capacitor ◽  
Clock Frequency ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Transconductance Amplifier ◽  
A Chain

This paper presents the design and implementation of a single-loop three-order switched-capacitor sigma-delta modulator(SDM) with a standard 0.18um CMOS technology. A current optimization technique is utilized in proposed design to reduce the power of operational transconductance amplifier(OTA).Using a chain of Integrators with weighted feed-forward summation(CIFF) structure and optimized single-stage class-A OTA with positive feed-back to minimize the power consumption. The SDM has been presented with an over-sampling ratio of 128,clock frequency 6.144MHz,24kHz band- width, and achieves a peak SNR of 100dB,103dB dynamic range. The whole circuits consume 2.87mW from a single 1.8V supply voltage.

A Simple and Efficient Charge Injection Error Compensation Structure for MOS Sampling Switches

2018 ◽  
Vol 27 (08) ◽  
pp. 1850130 ◽  
Author(s):  
Saeed Naghavi ◽  
Mojde Nematzade ◽  
Niloofar Sharifi ◽  
Tohid Moradi Khanshan ◽  
Adib Abrishamifar ◽  
...  
Keyword(s):  
Input Signal ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Sampling Rate ◽  
Charge Injection ◽  
Sampled Data ◽  
Sampling Errors ◽  
Wide Range ◽  
Sinusoidal Input ◽  
Simulation Results

This paper introduces a new technique to design an analog MOS switch to be used in sampled-data circuits. In any sampled-data system, the accuracy of the sampling switch is a critical parameter to determine the overall performance of the system. To satisfy accuracy requirements of the switch, a novel technique to reduce channel charge injection error is proposed. The proposed switch has a very simple structure and it uses a small area of the chip. Also, it has a low on-resistance and its variation over the input signal range is acceptable. In order to evaluate the performance of the proposed switch, simulations are done in a 0.18[Formula: see text][Formula: see text]m standard CMOS technology. Simulation results show that the sampling errors produced by the channel charge injection is eliminated through a cancellation technique using an auxiliary transistor. The output error charge due to charge injection over a wide range of the input signal variation is very low (less than 1.45[Formula: see text]fC). Also, simulation results show that the proposed switch achieves signal-to-noise plus distortion ratio (SNDR) of 85.05[Formula: see text]dB, effective number of bits (ENOB) of 13.83, total harmonic distortion (THD) of [Formula: see text]87.23[Formula: see text]dB and spurious-free dynamic range (SFDR) of 88.14[Formula: see text]dB for a 1[Formula: see text]MHz sinusoidal input of 800[Formula: see text]mV peak-to-peak amplitude at 50[Formula: see text]MHz sampling rate with a 1.8[Formula: see text]V supply voltage.

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