scholarly journals Development of All-Diamond Scanning Probes Based on Faraday Cage Angled Etching Techniques

MRS Advances ◽  
2020 ◽  
Vol 5 (35-36) ◽  
pp. 1899-1907
Author(s):  
C. Giese ◽  
P. Quellmalz ◽  
P. Knittel
Keyword(s):  
Inductively Coupled Plasma ◽  
Nitrogen Vacancy ◽  
Faraday Cage ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Scanning Probes ◽  
Major Disadvantage ◽  
Single Crystal Diamond ◽  
Application Fields ◽  
Process Complexity

ABSTRACTWe are proposing a novel fabrication method for single crystal diamond scanning probes for atomic force microscopy (AFM), exploiting Faraday cage angled etching (FCAE). Common, oxygen-based, inductively coupled plasma (ICP) dry etching processes for diamond are limited with respect to the achievable geometries. The fabrication of freestanding micro- and nanostructures is therefore challenging. This is a major disadvantage for several application fields e.g., for realizing scanning magnetometry probes based on nitrogen vacancy (NV) centres and capable of measuring magnetic fields at the nanoscale. Combining a planar design with FCAE and state-of-the-art electron beam lithography (EBL) yields a reduction of process complexity and cost compared to the established fabrication technology of micro-opto-mechanical diamond devices. Here, we report on the direct comparison of both approaches and present first proof-of-concept planar-FCAE-prototypes for scanning probe applications.

scholarly journals Influence of diatomite microstructure on its adsorption capacity for Pb(II)

2009 ◽  
Vol 41 (3) ◽  
pp. 309-317 ◽  
Author(s):  
S. Nenadovic ◽  
M. Nenadovic ◽  
R. Kovacevic ◽  
Lj. Matovic ◽  
B. Matovic ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Atomic Emission ◽  
Emission Spectrometry ◽  
Wastewater Remediation ◽  
X Ray Diffraction ◽  
Plasma Atomic Emission Spectrometry ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Treated Sample

The effect of microstructural changes caused by mechanical modification on adsorption properties of diatomite samples were investigated. The microstructure has been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) while the degree of metal adsorption was evaluated by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP AES). The results show that metal sorption capacity of diatomite is considerably improved after mechanical modification and it can be attributed to amorphysation of the material. Immobilization efficiency increased from 22% for untreated to 81% for the treated sample after 5h at BPR 4.This qualifies natural diatomite as a material for wastewater remediation.

Surface Plasma Characterization of Polyimide Films for Flexible Electronics

2014 ◽  
Vol 970 ◽  
pp. 132-135 ◽  
Author(s):  
Huseyin Kizil ◽  
Meryem Oznur Pehlivaner ◽  
Levent Trabzon
Keyword(s):  
Flexible Electronics ◽  
Inductively Coupled Plasma ◽  
Treatment Time ◽  
Flexible Substrate ◽  
Oxygen Plasma Treatment ◽  
Polyimide Films ◽  
Complete Wetting ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Low Dielectric

Flexible electronics have drawn much attention due to vast application possibilities. Polyimide was the substrate of choice as a flexible substrate owing to its properties such as good mechanical strength, high temperature resistance, good dimensional stability, and low dielectric constant. The adhesion between metal and polymer substrate plays a crucial role for reliability of these applications and low adhesion was the cause for most failures. In this study, plasma surface treatments were applied on polyimide surface by inductively coupled plasma (ICP) treatment system. The results of contact angle measurements and atomic force microscopy (AFM) show a large increase in surface roughness with increasing treatment time. Complete wetting was found for both argon and oxygen plasma treatment. Analysis of chemical composition by FTIR reveals an increase in carbon-oxygen functional groups and the concentration of oxygen on the surfaces.

scholarly journals Partitioning and Surficial Segregation of Trace Elements in Iron Oxides in Hydrothermal Fluid Systems

Minerals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 57
Author(s):  
Nikolay Smagunov ◽  
Vladimir Tauson ◽  
Sergey Lipko ◽  
Dmitriy Babkin ◽  
Taisa Pastushkova ◽  
...  
Keyword(s):  
Trace Elements ◽  
Inductively Coupled Plasma ◽  
Absorption Spectrometry ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Fluid Systems ◽  
Nonautonomous Phase ◽  
Plasma Mass Spectrometry

Partitioning experiments were done by hydrothermal synthesis of crystals containing trace elements (TEs) by internal sampling of fluid at the temperature of 450 °C and pressure of 1 kbar. The crystal phases obtained were magnetite, hematite, and Ni-spinel, which were studied using X-ray diffraction (XRD), X-ray electron probe microanalysis (EPMA), laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS), atomic absorption spectrometry (AAS), and atomic force microscopy (AFM). The solutions from the sampler’s fluid probes were analysed by AAS for TEs included elements of the iron group plus aluminium. The highest co-crystallisation coefficients of TE and Fe between mineral and fluid (DTE/Fe) in magnetite were measured for V, Al, Ni and Cr (in decreasing order of n units in value), a lower value was observed for Co (2 × 10−1), and still lower values for Ti, Zn, and Mn (n × 10−2–10−3). In hematite, DTE/Fe values were highest for Al and V (order of n units in value), while lower values characterised Ti, Cr, and Co (n × 10−1–10−3), and the lowest values were exhibited by Cu, Mn, and Zn (n × 10−5). Copper was confirmed to be the most incompatible with all minerals studied; however, Cu had a high content on crystal surfaces. This surficial segregation contributes to the average TE concentration even when a thin layer of nonautonomous phase (NAP) is enriched in the element of interest. The accumulation of TEs on the surface of crystals increased bulk content 1–2 orders of magnitude above the content of structurally-bound elements even in coarse crystals. The inverse problem—evaluation of TE/Fe ratios in fluids involved in the formation of magnetite-containing deposits—revealed that the most abundant metals in fluids were Fe followed by Mn, Zn, and Cu, which comprised 10 to 30% of the total iron content.

scholarly journals Fabrication of Diamond Submicron Lenses and Cylinders by ICP Etching Technique with SiO2 Balls Mask

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1622 ◽  
Author(s):  
Zongchen Liu ◽  
Tian-Fei Zhu ◽  
Yan-Feng Wang ◽  
Irfan Ahmed ◽  
Zhangcheng Liu ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Coupling Efficiency ◽  
Nitrogen Vacancy ◽  
Diamond Surface ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Nitrogen Vacancy Center ◽  
Submicron Structures ◽  
Vacancy Center

Submicron lenses and cylinders exhibiting excellent properties in photodetector and quantum applications have been fabricated on a diamond surface by an inductively-coupled plasma (ICP) etching technique. During ICP etching, a layer containing 500 nm diameter balls of SiO2 was employed as mask. By changing the mixing ratio of O2, Ar and CF4 during ICP etching, several submicron structures were fabricated, such as cylinders and lenses. The simulation results demonstrated that such submicron structures on a diamond’s surface can greatly enhance the photon out-coupling efficiency of embedded nitrogen-vacancy center.

Post-CMP Cleaning of Atom-Scale Planarization Surface of Computer Hard Disk Substrate

2010 ◽  
Vol 97-101 ◽  
pp. 1181-1185
Author(s):  
Nai Jing Bu ◽  
Hong Lei ◽  
Ru Ling Chen ◽  
Xiao Li Hu
Keyword(s):  
Inductively Coupled Plasma ◽  
Hard Disk ◽  
Atomic Emission ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Cleaning Solution ◽  
Hard Disk Substrate ◽  
Cleaning Methods ◽  
Disk Substrate

At present, the surface of computer hard disk substrate has reached atom-scale planarization after chemical mechanical polishing (CMP). Post-CMP cleaning is one of the key factors influencing the CMP performances. During cleaning, cleaning solution and cleaning methods play a key role in cleaning quality and effectiveness. In the present paper, alkylpolyoxyethylene alcohol carboxylic ester (FAC) surfactant was synthesized and its cleaning performances on atom-scale planarization surface of computer hard disk substrate were investigated. Microscope analysis indicated that the prepared detergent containing FAC surfactant exhibited improved cleaning performances compared with the commercial detergent. Further, inductively coupled plasma (ICP) atomic emission spectrometer, auger electron spectrogram (AES) and atomic force microscopy (AFM) analyses after static corrosion test showed that the prepared cleaning solution had lower corrosion to hard disk substrate.

scholarly journals Effect of low-damage inductively coupled plasma on shallow nitrogen-vacancy centers in diamond

2015 ◽  
Vol 107 (7) ◽  
pp. 073107 ◽  
Author(s):  
Felipe Fávaro de Oliveira ◽  
S. Ali Momenzadeh ◽  
Ya Wang ◽  
Mitsuharu Konuma ◽  
Matthew Markham ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Nitrogen Vacancy ◽  
Inductively Coupled ◽  
Nitrogen Vacancy Centers

scholarly journals Plasma Treatments and Light Extraction from Fluorinated CVD-Grown (400) Single Crystal Diamond Nanopillars

2020 ◽  
Vol 6 (2) ◽  
pp. 37
Author(s):  
Mariusz Radtke ◽  
Abdallah Slablab ◽  
Sandra Van Vlierberghe ◽  
Chao-Nan Lin ◽  
Ying-Jie Lu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Light Extraction ◽  
Ambient Conditions ◽  
Remarkable Effect ◽  
Inductively Coupled ◽  
Single Crystal Diamond ◽  
Optically Detected

We investigate the possibilities to realize light extraction from single crystal diamond (SCD) nanopillars. This was achieved by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV−). We focus on the naturally-generated by chemical vapor deposition (CVD) growth of NV−. Applied diamond was neither implanted with 14N+, nor was the CVD synthesized SCD annealed. To investigate the possibility of light extraction by the utilization of NV−’s bright photoluminescence at room temperature and ambient conditions with the waveguiding effect, we have performed a top-down nanofabrication of SCD by electron beam lithography (EBL) and dry inductively-coupled plasma/reactive ion etching (ICP-RIE) to generate light focusing nanopillars. In addition, we have fluorinated the diamond’s surface by dedicated 0 V SF6 ICP plasma. Light extraction and spin manipulations were performed with photoluminescence (PL) spectroscopy and optically detected magnetic resonance (ODMR) at room temperature. We have observed a remarkable effect based on the selective 0 V SF6 plasma etching and surprisingly, in contrast to literature findings, deactivation of NV− centers. We discuss the possible deactivation mechanism in detail.

scholarly journals Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 513
Author(s):  
Tianfei Zhu ◽  
Yan Liang ◽  
Zongchen Liu ◽  
Jiao Fu ◽  
Yanfeng Wang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Gold Film ◽  
Nitrogen Vacancy ◽  
Diamond Surfaces ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Nitrogen Vacancy Center ◽  
Nitrogen Vacancy Centers ◽  
Vacancy Center

In this study, nitrogen-vacancy center emissions from nanocone structures fabricated on diamond surfaces by gold film annealing and inductively coupled plasma etching techniques were characterized. First, the diamond substate deposited with gold film was annealed to form a nano-sized dot mask. Second, through inductively coupled plasma etching, nanocone-shaped structures were fabricated using optimized gold dots as masks. Finally, the as-fabricated nanocone and planar structures were investigated with photoluminescence experiments at temperatures ranging from room temperature to 80 K, with the results showing approximately two-fold higher emission values for nitrogen-vacancy centers from nanocones.

Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature

2007 ◽  
Vol 336-338 ◽  
pp. 2228-2231
Author(s):  
Xiao Qiang Wang ◽  
De Yan He ◽  
Jun Shuai Li
Keyword(s):  
Optical Properties ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Nano Crystalline ◽  
Si Films

Si films were deposited by inductively coupled plasma chemical vapor deposition at room temperature with a mixture of SiH4/H2. The microstructure of the film was characterized with Fourier transform of infrared, Raman spectroscopy, atomic force microscopy. We found that SiH4 concentration strongly affects the structure of Si films and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration. The analysis for optical properties of the films suggested that the optical band gap EOPT of films are distinctively lower than those of amorphous Si films. It has been observed that the EOPT of sample decreases with the increasing of H content in film.

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

2004 ◽  
Vol 14 (03) ◽  
pp. 756-761 ◽  
Author(s):  
D. BUTTARI ◽  
A. CHINI ◽  
A. CHAKRABORTY ◽  
L. MCCARTHY ◽  
H. XING ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Inductively Coupled Plasma ◽  
Laser Interferometry ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Atomic Force ◽  
Template Process ◽  
Wide Range

Inductively coupled plasma (ICP) etching of GaN with high selectivity over Al .22 Ga .78 N in BCl 3/ SF 6 mixtures has been studied. Selectivity and surface morphology were investigated over a wide range of pressures (3.75–37.5mTorr), RF powers (30–120 W), ICP powers (100–400 W), and SF 6/ BCl 3 ratios (0.1–0.7). Higher pressures, lower dc biases, and higher SF 6/ BCl 3 ratios increased the GaN to AlGaN selectivity. Selectivities up to 25 were measured by laser interferometry. A root mean square (rms) surface roughness of 0.67 nm was measured by atomic force microscopy (AFM) after removal of 0.5 μm from a GaN template (process selectivity: 15, as-grown rms surface roughness: 0.56 nm). A degradation in surface morphology, with the gradual formation of pits, was observed for selectivities above 10.

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