Microstructure and Electrical Property Correlations in Ga:ZnO Transparent Conducting Thin Films

2006 ◽  
Vol 957 ◽  
Author(s):  
Vikram Bhosle ◽  
Jagdish Narayan
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Zno Films ◽  
Nanocrystalline Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Texture Characteristics ◽  
Crystal Films ◽  
Amorphous Glass

ABSTRACTWe report the correlations between processing, microstructure and electrical properties of Ga doped ZnO films. Films with varying grain size were grown on amorphous glass by changing the substrate and pulsed laser deposition variables. The results corresponding to these films were compared with those from epitaxial single crystal films grown on (0001) sapphire. Microstructural characteristics were analyzed in detail by using X-ray diffraction and transmission electron microscopy. Electrical properties were evaluated by resistivity measurements in the temperature range of 15-300K and Hall measurements at room temperature. It was observed that the grain boundaries and orientation of grains (texture characteristics) affected the carrier concentration and the mobility considerably in nanocrystalline films deposited on glass substrates. This effect is envisaged to occur as a result of trapping of electrons and build up of a potential barrier across the grain boundaries. However, the resistivity in nanocrystalline films could be decreased significantly by carefully controlling the deposition conditions. For a film deposited on glass at 2000C and 1 mtorr of oxygen partial pressure, we attained a minimum resistivity value of 1.8 × 10-4Ω-cm. As a comparison, the epitaxial films on sapphire substrates showed a resistivity of 1.4 × 10-4 Ω-cm, deposited at 4000C and pressure of 2.4 × 10-2 torr. Role of grain boundaries and defects in controlling the carrier generation and transport is considered in detail and possible mechanisms limiting the electrical conductivity in films with different microstructures are identified.

XRD Investigations on Film Thickness and Substrate Temperature Effects of DC Magnetron Sputtered ZnO Films

2013 ◽  
Vol 845 ◽  
pp. 241-245
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Direct Current Plasma ◽  
Crystallite Sizes ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Diffraction Patterns

In this paper, direct current plasma magnetron sputter deposition technique was employed to deposit zinc oxide (ZnO) films on glass substrates. The magnetron sputtering process parameters including film thickness and substrate temperature were investigated. The crystallite sizes of the ZnO films were extracted from the measured X-ray diffraction patterns. The correlation of the crystallite size of the ZnO films with the film thickness and the substrate temperature will be discussed in this paper.

scholarly journals Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
J. Santos Cruz ◽  
S. A. Mayén Hernández ◽  
F. Paraguay Delgado ◽  
O. Zelaya Angel ◽  
R. Castanedo Pérez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Peroxide ◽  
Photocatalytic Activity ◽  
Electrical Properties ◽  
Absolute Temperature ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Blue Solution

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

Growth of epitaxial ZnO films on Si(111)

2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transparent Conducting Oxide ◽  
Deposition Process ◽  
Growth Direction ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.

Effect of Solution Concentration in the Optical and Structural Properties of ZnO Thin Films

2018 ◽  
Vol 18 ◽  
pp. 113-117 ◽  
Author(s):  
Abdelkader Hafdallah ◽  
Aimane Guedri ◽  
Mohamed Salah Aida ◽  
Nadhir Attaf
Keyword(s):  
Thin Films ◽  
Solution Concentration ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Optical Band Gaps ◽  
Optical Films ◽  
Spray Technique ◽  
Uv Visible

In the present work we prepared conducting and transparent thin films ZnO with different solution concentrations by pyrolysis spray technique on glass substrates. These films are obtained starting from solution of zinc acetate dehydrate [Zn(CH3COO)2.2H2O] dissolved in methanol, at substrate temperature fixed T =350°C with a concentration of solution vary from 0.05-0.2 M. Our interest is on the investigation of solution concentration on the structural and optical properties of these films. The X-ray diffraction (XRD) results showed that the synthesized ZnO films are polycrystalline with preferred orientation along the (002) plane. The optical films characterization was carried out by the UV-Visible transmission. The optical gap and films disorder were deduced from the absorption spectra, The values of optical band gaps vary between 3.24 and 3.43 eV.

scholarly journals Microstructure and Mechanical Properties of 4Al Alumina-Forming Austenitic Steel after Cold-Rolling Deformation and Annealing

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2767 ◽  
Author(s):  
Chenchen Jiang ◽  
Qiuzhi Gao ◽  
Hailian Zhang ◽  
Ziyun Liu ◽  
Huijun Li
Keyword(s):  
Grain Size ◽  
Cold Rolling ◽  
Grain Boundaries ◽  
Austenitic Steel ◽  
Rolling Reduction ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Cold Rolling Reduction ◽  
Average Grain Size ◽  
Cold Rolled

Microstructural evolutions of the 4Al alumina-forming austenitic steel after cold rolling with different reductions from 5% to 30% and then annealing were investigated using electron backscattering diffraction (EBSD), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Tensile properties and hardness were also measured. The results show that the average grain size gradually decreases with an increase in the cold-rolling reduction. The low angle grain boundaries (LAGBs) are dominant in the cold-rolled samples, but high angle grain boundaries (HAGBs) form in the annealed samples, indicating that the grains are refined under the action of dislocations. During cold rolling, high-density dislocations are initially introduced in the samples, which contributes to a large number of dislocations remaining after annealing. With the sustaining increase in cold-rolled deformation, the samples exhibit more excellent tensile strength and hardness due to the decrease in grain size and increase in dislocation density, especially for the samples subjected to 30% cold-rolling reduction. The contribution of dislocations on yield strength is more than 60%.

Preparation and Characterization of Nanocrystalline Gadolinium Oxide Powders and Films

2020 ◽  
Vol 850 ◽  
pp. 267-272 ◽  
Author(s):  
Regina Burve ◽  
Vera Serga ◽  
Aija Krūmiņa ◽  
Raimons Poplausks
Keyword(s):  
Electron Microscopy ◽  
Single Phase ◽  
Gadolinium Oxide ◽  
X Ray Diffraction ◽  
Cubic Crystal ◽  
Glass Substrates ◽  
Oxide Powders ◽  
Transmission Electron ◽  
The Mean

Due to its magnetic, electrical, absorption, and emission properties, nanoscale gadolinium oxide is widely used in various fields. In this research, nanocrystalline Gd2O3 powders and films on glass substrates have been produced by the extraction-pyrolytic method. X-ray diffraction analysis revealed the formation of single phase Gd2O3 with cubic crystal structure and the mean crystallite size from 9 to 25 nm in all produced materials. The morphology of samples has been characterized by scanning electron microscopy and transmission electron microscopy.

Optically Transparent of N-ZnO/p-NiO Heterojunction for Ultraviolet Photodetector Application

2011 ◽  
Vol 687 ◽  
pp. 711-715 ◽  
Author(s):  
Shu Yi Tsai ◽  
Min Hsiung Hon ◽  
Yang Ming Lu
Keyword(s):  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Order Of Magnitude ◽  
Uv Visible ◽  
Diode Behavior ◽  
P Type

Transparent p–n heterojunction diodes consisting of n-type ZnO and p-type NiO thin films were prepared on glass substrates by r.f. magnetron sputtering. The structural and optical properties of the n-ZnO/p-NiO heterojunction were characterized by X-ray diffraction (XRD), UV–visible spectroscopy, Hall measurement, and I-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 2) orientation. The optical transmittances of ZnO and NiO films are 87% and 80%, respectively. The current–voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest of leakage current is 7.73x10−8 A/cm2 for n-ZnO/p-NiO heterojunction diode. Upon UV irradiation, it was found that the detector current was increased by more than one order of magnitude. It was also found that the corresponding time constant for turn-on transient was τon = 27.9 ms while that for turn-off transient was τoff= 62.8 ms.

Growth of High Quality Poly-SiGe on Glass Substrates

1996 ◽  
Vol 452 ◽  
Author(s):  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Kouichirou Minami ◽  
Masaji Yamamoto ◽  
Jun-ichi Hanna
Keyword(s):  
Electron Microscopy ◽  
Gas Flow ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Composition Variation ◽  
Gas Flow Ratio

AbstractThe composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/ GeF4) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1−x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.

The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

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