Accurate and Simultaneous Determination of Carrier Density and Mobility in Organic Semi-conducting Materials

2009 ◽  
Vol 1154 ◽  
Author(s):  
Kai Shum ◽  
Zhuo Chen ◽  
Chenming Xue ◽  
Shi Jin
Keyword(s):  
Carrier Density ◽  
Field Effect Transistors ◽  
Semiconducting Materials ◽  
Light Emitting ◽  
Conducting Materials ◽  
Data Analysis Procedure ◽  
Organic Semiconducting Materials ◽  
Electronic Characteristic ◽  
Space Charge Limited Currents

AbstractHow to accurately determine carrier mobility and density in organic semiconducting materials is a very important subject for their optoelectronic applications including light-emitting diodes, solar cells, and thin film field-effect transistors. In this work, we report on a unique data analysis procedure for space-charge limited currents to simultaneously obtain the carrier density and mobility in semiconducting organic-materials. This procedure has been used for a few newly synthesized perylene tetracarboxylic diimide (PDI) derivatives with tunable π-stack structures without altering the electronic characteristic of individual molecules. How π-stack structural variation and residual carrier density affect electron transport performance will be discussed.

Dithienocoronene diimide (DTCDI)-Derived Triads for High-Performance Air-Stable, Solution-Processed Balanced Ambipolar Organic Field-Effect Transistors

2021 ◽  
Author(s):  
Huijuan Ran ◽  
Fei Li ◽  
Rong Zheng ◽  
Wenjing Ni ◽  
Zheng Lei ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Stable Solution ◽  
Organic Field Effect Transistors ◽  
Semiconducting Materials ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Semiconducting Materials ◽  
Light Emitting Transistors

Developing ambipolar organic semiconducting materials is essential for complementary-like inverters and light-emitting transistors. In this study, three new dithienocoronenediimide (DTCDI)-derived triads, DTCDI-BT, DTCDI-BBT and DTCDI-BNT, were designed and synthesized, in...

Spectroscopic Ellipsometry of the Optical Functions of Some Widely Used Organic Light Emitting Diodes (OLEDs) Materials.

2005 ◽  
Vol 871 ◽  
Author(s):  
Z. T. Liu ◽  
C. C. Oey ◽  
A. B. Djuriši ◽  
C. Y. Kwong ◽  
C. H. Cheung ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Indium Tin Oxide ◽  
High Vacuum ◽  
Light Emitting ◽  
Glass Substrates ◽  
Optical Functions ◽  
Conducting Materials ◽  
Ito Glass ◽  
Polystyrene Sulfonic Acid

AbstractIn this work, optical functions of some widely used OLEDs materials 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), tris (8-hydroxyquinoline) aluminum (Alq3), (N,N′-di(naphthalene-1-yl)-N,N′- diphenylbenzidine (NPB),poly(3,4,-ethylene dioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) and indium tin oxide (ITO)) were studied using spectroscopic ellipsometry (SE) in the spectral range from 1.55 eV to 4.1 eV (wavelength range of 300 nm to 800 nm). The samples were prepared either by thermal evaporation in high vacuum or spin-coating of thin films onto glass substrates. For determination of the optical functions of ITO, commercial ITO glass was used. Measurements at different incident angles were performed to determine whether the samples can be considered isotropic. The SE data were modeled using an oscillator model (Lorentz for semiconducting and Lorentz-Drude for conducting materials). The absorption spectra were also measured, and the comparison with the data determined by SE is given.

OFET Sensors with Poly 3-hexylthiophene and Pentacene as Channel Materials for Ionizing Radiation

2012 ◽  
Vol 1383 ◽  
Author(s):  
Harshil N. Raval ◽  
V. Ramgopal Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionizing Radiation ◽  
Radiation Effects ◽  
Field Effect Transistors ◽  
Semiconducting Materials ◽  
Current Sensitivity ◽  
Current Increase ◽  
Organic Semiconducting Materials ◽  
Uv Visible

ABSTRACTPentacene and poly 3-hexylthiophene (P3HT) are the most promising p-type organic semiconducting materials for fabrication of organic field effect transistors (OFETs). OFETs with aforesaid organic semiconducting materials have been demonstrated as total dose detectors for ionizing radiation, wherein the changes in the electrical characteristic parameters, such as, increase in the OFF current, increase in the ON current, change in the current ratio, shift in the threshold voltage, change in the subthreshold swing, etc., were used as a measure of ionizing radiation dose. Upon exposure to ionizing radiation P3HT based OFET sensor has shown an OFF current sensitivity of 4.4 nA/Gy while pentacene based OFET sensor has shown an OFF current sensitivity of 26.7 nA/Gy for a total of 50 Gy dose of ionizing radiation. Change in the conductivity of the thin-films of pentacene and P3HT were observed and compared using electrostatic force microscopy (EFM) imaging before and after exposure to ionizing radiation. Effects of ionizing radiation on the energy band structures of the organic semiconducting materials, pentacene and P3HT, have been studied using UV-visible spectroscopy. Moreover, analysis of UV-visible spectra of the thin-films suggested the generation of energy states in larger quantity in case of pentacene thin-film as compared to P3HT thin-film upon exposure to the same dose of ionizing radiation. These results confirm the higher sensitivity observed in pentacene OFET sensor as compared to P3HT OFET sensor in terms of the change in electrical parameters.

Discotic columnar liquid-crystalline polymer semiconducting materials with high charge-carrier mobility via rational macromolecular engineering

2017 ◽  
Vol 8 (21) ◽  
pp. 3286-3293 ◽  
Author(s):  
Bin Mu ◽  
Xingtian Hao ◽  
Jian Chen ◽  
Qian Li ◽  
Chunxiu Zhang ◽  
...  
Keyword(s):  
Liquid Crystalline ◽  
Cost Effective ◽  
Crystalline Polymer ◽  
Charge Carrier Mobility ◽  
Optoelectronic Device ◽  
Side Chain ◽  
Liquid Crystal Polymers ◽  
Semiconducting Materials ◽  
Organic Semiconducting Materials ◽  
Device Applications

Well-prepared side-chain discotic liquid crystal polymers with shorter spacers in ordered columnar phases are fascinating and promising cost-effective, solution-processable organic semiconducting materials for various potential optoelectronic device applications.

scholarly journals Impact of device scaling on the electrical properties of MoS2 field-effect transistors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Goutham Arutchelvan ◽  
Quentin Smets ◽  
Devin Verreck ◽  
Zubair Ahmed ◽  
Abhinav Gaur ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Channel Length ◽  
Contact Length ◽  
Power Performance ◽  
Semiconducting Materials ◽  
Large Area ◽  
Short Channel ◽  
Device Scaling ◽  
Performance Area

AbstractTwo-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.

Light source with light emitting diodes. Determination of limited frequencies and of the crest factor of illuminance meters and luminance meters

1989 ◽  
Vol 20 (5) ◽  
pp. 205-217
Author(s):  
J Deforges ◽  
P Garcia ◽  
J Bastie ◽  
F Marandet ◽  
J Bernard ◽  
...  
Keyword(s):  
Light Source ◽  
Light Emitting Diodes ◽  
Crest Factor ◽  
Light Emitting

scholarly journals Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
E.R. Cardozo de Oliveira ◽  
A. Naranjo ◽  
A. Pfenning ◽  
V. Lopez-Richard ◽  
G.E. Marques ◽  
...  
Keyword(s):  
Carrier Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

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