Thermomechanical Behavior of Continuous and Patterned Al Thin Films

1998 ◽  
Vol 516 ◽  
Author(s):  
O. Kraft ◽  
W.D. Nix
Keyword(s):  
Low Temperatures ◽  
Threshold Stress ◽  
Thermomechanical Behavior ◽  
Deformation Mechanisms ◽  
X Ray ◽  
Temperature Regimes ◽  
Relaxation Measurements ◽  
Opposite Behavior ◽  
Thermal Stress Relaxation ◽  
Two Temperature

AbstractIn this paper, we study the influence of the line width on the mechanical behavior of narrow unpassivated lines of pure Al and Al with 0.5 wt.-% Cu. The stress/temperature behavior during thermal cycling is investigated using x-ray diffractometry. Our results suggest that it is possible to distinguish between two temperature regimes in which different deformation mechanisms take place. At low temperatures, the narrowest lines sustain larger stresses than the continuous films, whereas at high temperatures the opposite behavior was found. Further, iso-thermal stress relaxation measurements on pure Al lines after various heat treatments were performed. These results indicate the existence of a threshold stress below which no deformation of the lines occurs.

scholarly journals (198) Growth and Development of Watermelon Plants Grafted onto Citrullus Rootstocks Selected for Disease Resistance at Two Temperature Regimes

HortScience ◽  
2005 ◽  
Vol 40 (4) ◽  
pp. 1053E-1054
Author(s):  
Yun-Chan Huh ◽  
Du-Hyun Kim ◽  
Sang-Gyu Lee ◽  
Kyoung-Sub Park ◽  
Dong-Kum Park ◽  
...  
Keyword(s):  
Plant Growth ◽  
Leaf Area ◽  
Low Temperatures ◽  
Dry Weight ◽  
Total Leaf Area ◽  
Relative Growth ◽  
Shoot Dry Weight ◽  
Temperature Regimes ◽  
Reduced Rate ◽  
Two Temperature

Growth response of `Sambok Honey' watermelon grafted onto different rootstocks, including four Citrullus rootstocks and three other cucurbitaceous rootstocks, was evaluated at low and normal temperature regimes. Marked reduction in plant growth rate was observed in plants grown at low temperatures as compared to those grown at normal or optimal temperatures. Relative growth reduction rates were 40% to 48% for vine length, 39% to 51% for total leaf area, 37% to 60% for shoot fresh weight, and 50% to 79% for shoot dry weight, respectively. Watermelon rootstock PI 482322 showed comparable plant growth as the most popular rootstock (Shintozwa pumpkin) even at low temperatures. `Sambok Honey' watermelon grafted onto watermelon hybrids `PI 271969 × PI 296341' and `PI 271769 × Calhoun Gray', showed comparable plant growth as FR Dantos bottle gourd rootstock. Index of growth ability at low temperature (IGALT), which was calculated on the basis of reduced rate of vine length, dry weight, and leaf area, was comparatively high in C. martinezii, Shintozwa, PI 482322, and `PI 271769 × PI 296341' rootstocks (50% or higher) and lowest in own-rooted `Sambok Honey' or in watermelon plants on `Knight' rootstock. Watermelon hybrids `PI 271969 × PI 296341' and `PI 271769 × Calhoun Gray' exhibited better or at least comparable growth at low temperatures as compared to `FR Dantos', thus confirming the feasibility of using watermelon rootstocks even in winter greenhouse conditions.

scholarly journals Atomic Migration Studies with X-Ray Photon Correlation Spectroscopy

2014 ◽  
Vol 2 ◽  
pp. 73-94 ◽  
Author(s):  
Markus Stana ◽  
Manuel Ross ◽  
Bogdan Sepiol
Keyword(s):  
Low Temperatures ◽  
Short Range ◽  
Short Range Order ◽  
Photon Correlation Spectroscopy ◽  
Condensed Matter ◽  
Correlation Spectroscopy ◽  
Atomic Scale ◽  
Photon Correlation ◽  
X Ray ◽  
Amorphous Systems

The new technique of atomic-scale X-ray Photon Correlation Spectroscopy (aXPCS) makesuse of a coherent X-ray beam to study the dynamics of various processes in condensed matter systems.Particularly atomistic migration mechanisms are still far from being understood in most of intermetallicalloys and in amorphous systems. Special emphasis must be given to the opportunity to measureatomistic diffusion at relatively low temperatures where such measurements were far out of reach withpreviously established methods. The importance of short-range order is demonstrated on the basis ofMonte Carlo simulations.

The Evaluation of TiTe2 as a Diffusion Barrier in the Formation of Low Thermal Conductivity Nanolaminates with Bi2Te3 and Sb2Te3

2010 ◽  
Vol 74 ◽  
pp. 38-47
Author(s):  
Clay Mortensen ◽  
Paul Zschack ◽  
David C. Johnson
Keyword(s):  
Thermal Conductivity ◽  
Diffusion Barrier ◽  
Self Assembly ◽  
Low Temperatures ◽  
Annealing Temperature ◽  
The Self ◽  
High Angle ◽  
X Ray Diffraction ◽  
Amorphous Precursor ◽  
X Ray

The evolution of designed [(Ti-Te)]x[(Sb-Te)]y, [(Bi-Te)]x[(Sb-Te)]y, [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]y and [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors were followed as a function of annealing temperature and time using both low and high angle x-ray diffraction techniques to probe the self assembly into nanolaminate materials. The [(Bi-Te)]x[(Sb-Te)]y precursors were found to interdiffuse at low temperatures to form a (BixSb1-x)2Te3 alloy. The [(Ti-Te)]x[(Bi-Te)]y and [(Ti-Te)]x[(Sb-Te)]y precursors formed ordered nanolaminates [{(TiTe2)}1.35]x[Bi2Te3]y and [{(TiTe2)}1.35]x[Sb2Te3]y respectively. The [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]x precursors formed [{(TiTe2)}1.35]w[(Bi0.5Sb0.5)2Te3]2x nanolaminates on annealing, as the bismuth and antimony layers interdiffused. Over the range of TiTe2 thicknesses used in [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors, Bi and Sb were found to interdiffuse through the 2-4 nm thick Ti-Te layers, resulting in the formation of (BixSb1-x)2Te3 alloy layers as part of the final nanolaminated products. When the Bi-Te and Sb-Te thicknesses were equal in the amorphous precursors, symmetric [{(TiTe2)}1.35]m[(Bi0.5Sb0.5)2Te3]n nanolamiantes were formed. When the thicknesses of Bi-Te and Sb-Te layers were not equal in the amorphous precursor, asymmetric [(TiTe2)1.35]m[(BixSb1-x)2Te3]n[(TiTe2)1.35]m[(BixSb1-x)2Te3]p nanolaminates were formed. These results imply that to form (A)w(B)x(C)y nanolaminates using designed layered precursors all three components must be immiscible. To form (A)x(B)y(A)x(C)z nanolaminates, the components must be immiscible or the precursor to the A component and the A component itself must be an effective interdiffusion barrier preventing B and C from mixing.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

PREPARATION OF ANTIMONY-PLATINUM SURFACE ALLOY ELECTRODE BY ATOM DIFFUSION IN THE SOLID PHASE

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3999-4004
Author(s):  
HIROSHI MATSUI ◽  
KAZUFUMI WATANABE
Keyword(s):  
Diffraction Pattern ◽  
Low Temperatures ◽  
Solid Phase ◽  
Electrochemical Measurement ◽  
X Ray Diffraction ◽  
Platinum Surface ◽  
X Ray ◽  
Atom Diffusion ◽  
Heat Treated ◽  
Titanium Substrates

Antimony-platinum bilayers were prepared on titanium substrates by the two-step electrodeposition in the usual baths, and then surface alloys were formed by the atom diffusion in the solid phase. The simple antimony layer was little influenced by the substrate in both the measurements of X-ray diffraction and the i - E characteristic in a sulfuric acid solution. Regarding the bilayers, the catalytic activity in hydrogen evolution reaction was very sensitive to the presence of platinum, while the hydrogen adsorbability was quite insensitive. An interaction between antimony and platinum was confirmed by the appearance of a new dissolution wave in the electrochemical measurement and the occurrence of a new diffraction in the X-ray diffraction pattern after the heat-treatment of about 400°C. Although the new diffraction disagreed with any of the reported alloys, clear diffraction pattern of PtSb 2 alloy was observed, when the bilayers were heat-treated at about 600°C for one hour. Considering the penetration depth of X-ray, the alloying of antimony and platinum seems to occur also at low temperatures at least at the top surface.

Magnetic Properties of Sputtered Fe-O and Co-O Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
D. V. Dimitrov ◽  
A. S. Murthy ◽  
G. C. Hadjipanayis ◽  
C. P. SWANN
Keyword(s):  
Grain Size ◽  
Low Temperatures ◽  
Room Temperature ◽  
Oxide Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Large Shift ◽  
X Ray ◽  
Grain Size And Shape ◽  
Spherical Grains

AbstractFe-O and Co-O films were prepared by DC magnetron sputtering in a mixture of Ar and O2 gases. By varying the oxygen to argon ratio, oxide films with stoichiometry FeO, Fe3O4, α-Fe2O3, CoO and Co3O4 were produced. TEM studies showed that the Fe – oxide films were polycrystalline consisting of small almost spherical grains, about 10 nm in size. Co-O films had different microstructure with grain size and shape dependent on the amount of oxygen. X-ray diffraction studies showed that the grains in Fe-O films were randomly oriented in contrast to Co-O films in which a <111> texture was observed. Pure FeO and α-Fe2O3 films were found to be superparamagnetic at room temperature but strongly ferromagnetic at low temperatures in contrast to the antiferromagnetic nature of bulk samples. A very large shift in the hysteresis loop, about 3800 Oe, was observed in field cooled Co-CoO films indicating the presence of a large unidirectional exchange anisotropy.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

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