Single Wafer CVD of Silicon Nitride for Cmos Gate Applications

1999 ◽  
Vol 567 ◽  
Author(s):  
C. Pomarede ◽  
C. Werkhoven ◽  
J. Weidmann ◽  
T. Bergman ◽  
A. Gschwandtner ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Silicon Nitride Films ◽  
Excellent Growth ◽  
Gate Dielectric Material ◽  
Cluster Tool

ABSTRACTThe MESC/CTMC compatible, Advance 2500 cluster tool made by ASM is evaluated for the manufacturing of CMOS gate stack structures based on CVD silicon nitride rather than thermally grown silicon oxide as the gate dielectric material, and polysilicon as the gate electrode material. With two different CVD chemistries excellent growth characteristics and thickness uniformity control of the silicon nitride is demonstrated. Electrical assessment reveals lower leakage current as compared to silicon oxide and minimal hysteresis in C-V curves, even for gates stacks that have an equivalent oxide thickness below 1.5nm. The best properties are for silicon nitride films that also have a low H2 content.

Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

1999 ◽  
Vol 606 ◽  
Author(s):  
Wen-Jie Qi ◽  
Renee Nieh ◽  
Byoung Hun Lee ◽  
Youngjoo Jeon ◽  
Laegu Kang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Dielectric Material ◽  
Oxide Thickness ◽  
Amorphous Structure ◽  
Flat Band ◽  
Equivalent Oxide Thickness ◽  
Low Leakage ◽  
Quantum Mechanical Effects

AbstractReactive-magnetron-sputtered ZrO2 thin film has been deposited on Si directly for gate dielectric application. Both structural and electrical properties of the ZrO2 film have been investigated. An amorphous structure for 30Å ZrO2 and a semi-amorphous structure for 200Å ZrO2 have been revealed. The sputtered film shows a good stoichiometry and a good structural stability of ZrO2 based on the X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy data. Thin equivalent oxide thickness of about 11.5Å was obtained without the consideration of quantum mechanical effects. A low leakage of less than 10−2 A/cm2 at ±1V relative to the flat band voltage was obtained for this 11.5Å equivalent oxide thickness Pt/ZrO2/Si structure. High effective dielectric breakdown and superior reliability properties have been demonstrated for ZrO2 gate dielectric.

Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

2000 ◽  
Vol 21 (7) ◽  
pp. 341-343 ◽  
Author(s):  
Y.H. Wu ◽  
M.Y. Yang ◽  
A. Chin ◽  
W.J. Chen ◽  
C.M. Kwei
Keyword(s):  
Gate Dielectric ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
High Quality

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

Microbridge Testing of Silicon Oxide/Silicon Nitride Bilayer Films

2000 ◽  
Vol 657 ◽  
Author(s):  
C.-F. Qian ◽  
Y.-J. Su ◽  
M.-H. Zhao ◽  
T.-Y. Zhang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Single Layer ◽  
Bilayer Films ◽  
Silicon Nitride Films ◽  
Small Deflection ◽  
Equivalent Bending Stiffness

ABSTRACTThe present work further develops the microbridge testing method to characterize mechanical properties of bilayer thin films. A closed-form formula for deflection versus load under small deflection is derived with consideration of the substrate deformation and residual stress in each layer. The analysis shows that the solution for bending a bilayer beam is equivalent to that for bending a single-layer beam with an equivalent bending stiffness, an equivalent residual force and a residual moment. One can estimate the Young's modulus and residual stress in a layer if the corresponding values in the other layer are known. The analytic results are confirmed by finite element calculations. The microbridge tests are conducted on low-temperature-silicon oxide (LTO)/silicon nitride bilayer films as well as on silicon nitride single-layer films. All microbridge specimens are prepared by the microfabricating technique. The tests on the single-layer films provide the material properties of the silicon nitride films. Then, applying the proposed method for bilayer films under small deflection yields the Young's modulus of 37 GPa and the residual stress of -148 MPa for LTO films.

scholarly journals Effect of organic gate dielectric material properties on interfacial charging and discharging of pentacene MIM device

2011 ◽  
Vol 14 ◽  
pp. 62-66 ◽  
Author(s):  
Kateryna Bazaka ◽  
Mohan V. Jacob ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Material Properties ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectric Material

Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate): A multitechnique study of the interphase regions

1998 ◽  
Vol 16 (4) ◽  
pp. 2021-2030 ◽  
Author(s):  
A. S. da Silva Sobrinho ◽  
N. Schühler ◽  
J. E. Klemberg-Sapieha ◽  
M. R. Wertheimer ◽  
M. Andrews ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ethylene Terephthalate ◽  
Silicon Oxide ◽  
Silicon Nitride Films ◽  
Poly Ethylene Terephthalate ◽  
Poly Ethylene
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