Zr Oxide Based Gate Dielectrics with Equivalent SiO2 Thickness of Less than 1.0 nm and Device Integration with Pt Gate Electrode

2000 ◽  
Vol 611 ◽  
Author(s):  
Yanjun Ma ◽  
Yoshi Ono
Keyword(s):  
Gate Dielectric ◽  
Process Integration ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Cmos Process ◽  
Metal Gate ◽  
Leakage Currents ◽  
Gate Electrodes ◽  
Device Integration ◽  
Dual Metal

ABSTRACTZrO2 films are investigated as an alternative to SiO2 gate dielectric below 1.5nm. A maximum accumulation capacitance ∼35 fF/μm2 with a leakage current of less than 0.1 A/cm2 has been achieved for a 3 nm Zr-O film, suggesting that ZrO2 can be scaled to below an equivalent oxide thickness of 0.5 nm. Al and Si doping is also investigated to reduce leakage currents and to increase the crystallization temperature of the film. Submicron MOSFETs with TiN or Pt gate electrodes have been fabricated with these gate dielectrics with excellent characteristics, demonstrating the feasibility of CMOS process integration. In particular, Pt damascene gate PMOS is shown to have the proper threshold voltage for dual metal gate CMOS application.

Impact of Gate Process Technology on EOT of HfO2 Gate Dielectric

2003 ◽  
Vol 765 ◽  
Author(s):  
Daewon Ha ◽  
Qiang Lu ◽  
Hideki Takeuchi ◽  
Tsu-Jae King ◽  
Katsunori Onishi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Deposition Rate ◽  
Silicon Germanium ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Cmos Process ◽  
Gate Leakage ◽  
Process Technology ◽  
Cmos Scaling

AbstractTo facilitate CMOS scaling beyond the 65 nm technology node, high-permittivity gate dielectrics such as HfO2 will be needed in order to achieve sub-1.3nm equivalent oxide thickness (EOT) with suitably low gate leakage, particularly for low-power applications. Polycrystalline silicon-germanium (poly-SiGe) is a promising gate material because it is compatible with a conventional CMOS process flow, and because it can yield significantly lower electrical gate-oxide thickness as compared with poly-Si. In this paper, the effects of the gate material (Si vs. SiGe) and gate deposition rate on EOT and gate leakage current density are investigated. Poly-Si0.75Ge0.25 gate material yields the lowest EOT and is stable up to 950°C for 30 seconds, providing 2 orders of magnitude lower leakage current compared to poly-Si gate material. A faster gate deposition rate (achieved by using S2H6 instead of SiH4 as the gaseous Si source) is also effective for minimizing the increases in EOT and leakage current with high-temperature annealing.

Impact of Galvanic Corrosion on Metal Gate Stacks

2009 ◽  
Vol 145-146 ◽  
pp. 215-218
Author(s):  
Masayuki Wada ◽  
Sylvain Garaud ◽  
I. Ferain ◽  
Nadine Collaert ◽  
Kenichi Sano ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Galvanic Corrosion ◽  
Gate Stacks ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
Gate Electrodes ◽  
High K ◽  
Work Functions

High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by generating the depletion layer in poly-Silicon gate, metal gate electrodes with proper work functions (WF) have to be used on the high-k dielectrics.

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric

2002 ◽  
Vol 716 ◽  
Author(s):  
S.B. Samavedam ◽  
J.K. Schaeffer ◽  
D.C. Gilmer ◽  
V. Dhandapani ◽  
P.J. Tobin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Metal Gate ◽  
Mos Capacitors ◽  
Dielectric Thickness ◽  
Metal Gates ◽  
Polysilicon Gate ◽  
Dual Metal ◽  
High Dielectric

AbstractAs the MOSFET gate lengths are scaled down to 50 nm or below, the expected increase in gate leakage will be countered by the use of a high dielectric constant (high K) material. The series capacitance from polysilicon gate electrode depletion significantly reduces the gate capacitance as the dielectric thickness is scaled down to 10 Å equivalent oxide thickness (EOT) or below. Metal gates promise to solve this problem and address other problems like boron penetration and enhanced gate resistance that will have increased focus as the polysilicon gate thickness is reduced. Extensive simulations have shown that the optimal gate work-functions for the sub-50 nm channel lengths should be 0.2 eV below (above) the conduction (valence) band edge of silicon for n-MOSFETs (p-MOSFETs). This study summarizes the evaluations of TiN, TaSiN, WN, TaN, TaSi, Ir and IrO2 as candidate metals for dual-metal gate CMOS using HfO2 as the gate dielectric. The gate work-function was determined by fabricating MOS capacitors with varying dielectric thicknesses and different post-gate anneals. The metal-dielectric compatibility and thermal stability was studied by annealing the stacks at different temperatures. The gate stacks were characterized using TEM, SIMS and X-ray diffraction. Based on workfunctions and thermal stability, TaSiN and TaN show most promise as metal electrodes for HfO2 n-MOSFETs.

MOSFET AND FRONT-END PROCESS INTEGRATION: SCALING TRENDS, CHALLENGES, AND POTENTIAL SOLUTIONS THROUGH THE END OF THE ROADMAP

2002 ◽  
Vol 12 (02) ◽  
pp. 267-293 ◽  
Author(s):  
PETER M. ZEITZOFF ◽  
JAMES A. HUTCHBY ◽  
HOWARD R. HUFF
Keyword(s):  
Process Integration ◽  
Gate Dielectrics ◽  
Double Gate ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Technology Roadmap ◽  
Front End ◽  
High K ◽  
Ic Technology

The development of advanced MOSFETs for future IC technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal-gate electrodes, and perhaps the use of non-classical devices such as double-gate MOSFETs in the later stages of the ITRS.

Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

2001 ◽  
Vol 670 ◽  
Author(s):  
Igor Polishchuk ◽  
Pushkar Ranade ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
New Technology ◽  
Cmos Technology ◽  
Dielectric Surface ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Low Threshold ◽  
Work Functions ◽  
Electrical Reliability

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

2007 ◽  
Vol 102 (7) ◽  
pp. 074511 ◽  
Author(s):  
J. K. Schaeffer ◽  
D. C. Gilmer ◽  
S. Samavedam ◽  
M. Raymond ◽  
A. Haggag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
High Permittivity ◽  
Gate Electrodes

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

An Evaluation of Ti-Based Metal Gate Electrodes on Hf-Silicate Dielectrics for Dual-Metal-Gate Applications

2008 ◽  
Vol 11 (4) ◽  
pp. H81 ◽  
Author(s):  
S. Y. Son ◽  
P. Kumar ◽  
J. S. Lee ◽  
H. Cho ◽  
H. S. Jung ◽  
...  
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal
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