Epitaxial Growth of GaAs on 4-Inch Diameter Silicon Substrates by OMCVD.

1987 ◽  
Vol 91 ◽  
Author(s):  
Jack P. Salerno ◽  
J. W. Lee ◽  
R. E. McCullough ◽  
R. P. Gale
Keyword(s):  
Epitaxial Growth ◽  
Surface Quality ◽  
Schottky Diode ◽  
Quality Measurement ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Comparable Quality

ABSTRACTGaAs epitaxial layers grown on Si substrates up to 4 inches in diameter by OMCVD are characterized with respect to the materials parameters important for their application for device and circuit manufacturing. The layers are characterized using commercial flatness and surface quality measurement instrumentation, x-ray diffraction, Schottky diode characteristics, and photoluminescence. The 4-inch diameter GaAs epilayers are a singleoriented phase and are of comparable quality to GaAs epilayers grown on smaller diameter Si substrates.

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 209-212
Author(s):  
Hideki Shimizu ◽  
Kensaku Hisada ◽  
Yosuke Aoyama
Keyword(s):  
Epitaxial Growth ◽  
Flow Rate ◽  
Hydrogen Plasma ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Films ◽  
Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction

2010 ◽  
Vol 25 (2) ◽  
pp. 149-153
Author(s):  
Isaac Vander ◽  
R. W. Zuneska ◽  
F. J. Cadieu
Keyword(s):  
Single Crystal Silicon ◽  
Magnetic Films ◽  
Mass Attenuation Coefficient ◽  
Silicon Substrates ◽  
Film Material ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Si Substrates

This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.

Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 572 ◽  
Author(s):  
K. J. Linthicum ◽  
T. Gehrke ◽  
D. Thomson ◽  
C. Ronning ◽  
E. P. Carlson ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Silicon Substrates ◽  
Lateral Growth ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Si Substrates ◽  
Crystallographic Tilt

ABSTRACTPendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (011) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ∼0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM ∼ 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM ∼ 4 meV).

scholarly journals Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeo3 thin films

2011 ◽  
Vol 5 (1) ◽  
pp. 31-39 ◽  
Author(s):  
Glenda Biasotto ◽  
Francisco Moura ◽  
Cesar Foschini ◽  
Elson Longo ◽  
Jose Varela ◽  
...  
Keyword(s):  
Thin Films ◽  
Lattice Parameter ◽  
Hexagonal Structure ◽  
Piezoelectric Response ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Entire Thickness

Bi0.85La0.15FeO3 (BLFO) thin films were deposited on Pt(111)/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500?C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of mis?t strains.

Epitaxial Tin Films on Sapphire and Silicon-on-Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
R.D. Vispute ◽  
K. Dovidenko ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electrical Resistivity ◽  
Epitaxial Growth ◽  
Defect Formation ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Metallic Behavior ◽  
Transmission Microscopy ◽  
Tin Films ◽  
X Ray ◽  
Si Substrates

ABSTRACTWe have investigated epitaxial growth of TiN on sapphire and electronic grade silicon-on-sapphire (SOS) by PLD. A pulsed KrF excimer laser was used to ablate the stoichiometric TiN target in the deposition chamber maintained at a base pressure of 3xl0-7 Torr. Epitaxial growth was achieved at deposition temperatures of 500-700°C. The films were characterized by x-ray diffraction technique, Raman spectroscopy, high resolution electron transmission microscopy and four-point-probe electrical resistivity. The x-ray diffraction and TEM results showed that the TiN films deposited on sapphire (0001) and SOS above 500oC were single crystal in nature. The epitaxial relationship for TiN on sapphire was found to be TiN[1 1 1]||Al2O3[0001] and in-plane alignment of TiN[110]||Al2O3[1010]. In case of growth on SOS, epitaxy of TiN on Si was cube-on-cube and is similar to that of TiN grown on bulk Si substrates. Four-point-probe electrical resistivity measurements showed characteristic metallic behavior of these films as a function of temperature with the lowest value of resistivity of about 20-22μΩ-cm at room temperature. This paper describes the fundamental issues related to epitaxy, defect formation and nitride-oxide interfaces. It is also shown that the TiN films on sapphire and SOS have unique characteristics and are promising for metallization in advanced microelectronics.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

Rapid Thermal Oxidation for Passivation of Porous Silicon

1994 ◽  
Vol 342 ◽  
Author(s):  
I. BÁrsony ◽  
J.G.E. Klappe ◽  
É. Vázsonyi ◽  
T. Lohner ◽  
M. Fried
Keyword(s):  
Porous Silicon ◽  
Mechanical Stability ◽  
Porous Substrate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Tetragonal Lattice ◽  
Optical Heating ◽  
Vertical Inhomogeneity ◽  
Highly Porous

ABSTRACTChemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD) was used to analyze quantitatively the strain distribution obtained in different morphology PSL that were prepared on (100) p and p+Si substrates. Tetragonal lattice constant distortion can be as high as 1.4% in highly porous “as-prepared” samples. Incoherent optical heating RTO is governed by the absorption in the oxidized specimen. PSL show vertical inhomogeneity according to interpretation of spectroscopic ellipsometry (SE) data. Oxygen incorporation during RTO is controlled by specific surface (in p+ proportional, in p inversely proportional with porosity), while the developing compressive stress depends on pore size, and decreases with porosity in both morphologies.

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