High Purity Titanium Silicide Films Formed by Sputter Deposition and Rapid Thermal Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
T. Brat ◽  
J.C.S. Wei ◽  
J. Poole ◽  
D. Hodul ◽  
N. Parikh ◽  
...  
Keyword(s):  
Tensile Stress ◽  
High Purity ◽  
Room Temperature ◽  
Titanium Silicide ◽  
Amorphous Films ◽  
Si Substrates ◽  
Crystalline Films ◽  
Order Of Magnitude ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTWe have investigated the formation of titanium silicide films sputter deposited from a high purity (99.995%) composite TiSi2.2 target. The films, sputtered at a rate of 3.7 nm/sec, were deposited on Si(100), Si02 , and N+ Poly-Si substrates at temperatures ranging from room temperature to 425°C. Room temperature depositions produced amorphous films, while heated substrate depositions formed crystalline films with a metastable C49 TiSi2 structure. Rapid thermal processing of these films at temperatures higher than 700°C resulted in the formation of a stable C54 TiSi2 structure. Stoichiometry of the deposited films over a 10 cm diameter wafer was found to be independent of the substrate temperature. Stress in the films was measured as a function of deposition and annealing parameters. The amorphous films showed a tensile stress of about 0.1 GPa, while films deposited on substrates at 425°C had an order of magnitude higher tensile stress level.The resistivity measured on the 400°C deposited films was about half of that obtained with the films deposited at roomtemperature. A comparison between films deposited on a hot substrate and those which were rapid thermal processed is presented.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Laser-Induced Multi-Crystallization of Thin Germanium Films

1988 ◽  
Vol 129 ◽  
Author(s):  
C. Ortiz ◽  
K.A. Rubin ◽  
S. A. Iuria
Keyword(s):  
Pulse Length ◽  
Laser Pulses ◽  
Beam Diameter ◽  
Amorphous Films ◽  
Small Spot ◽  
Laser Beam Irradiation ◽  
Crystalline Films ◽  
Kinetics Of ◽  
Deposited Films ◽  
Laser Pulse Length

ABSTRACTWe report here the crystallization kinetics of thin (35nm and 60nm) amorphous as-deposited Ge filins using diffraction limited laser beam irradiation and laser pulses between 30ns and IreS. The recrystallization of crystalline as-deposited films was also studied for similar laser conditions. Crystallization was observed for pulses as short as 50ns. We conclude that the use of small beam spots (-1μm) gives a very different crystallization morphology from that observed previously for larger beam diameter and same laser pulse length. In our case for short irradiation times, the nucleation process dominates over crystal growth. Laser irradiation of as-deposited crystalline films produced grains with significantly less defects than grains crystallized from as-deposited amorphous films. Temperature calculations allow us to understand these results by showing that only the small spot irradiation sustains the material at high temperature for times comparable to the pulse width.

Evolution of microstructure and stress of and associated whisker growth on Sn layers sputter-deposited on Cu substrates

2010 ◽  
Vol 25 (11) ◽  
pp. 2166-2174 ◽  
Author(s):  
M. Sobiech ◽  
C. Krüger ◽  
U. Welzel ◽  
J.Y. Wang ◽  
E.J. Mittemeijer ◽  
...  
Keyword(s):  
Room Temperature ◽  
Whisker Growth ◽  
Intermetallic Phase ◽  
Whisker Formation ◽  
Subsequent Aging ◽  
Si Substrates ◽  
Intermetallic Compound Formation ◽  
Cu Substrates ◽  
Sputter Deposited ◽  
Evolution Of Microstructure

After sputter deposition of Sn (layer thickness of 350 nm) on Cu substrates and during subsequent aging at room temperature, Cu and Sn reacted to form the intermetallic phase Cu6Sn5 in the Sn layer at the Cu/Sn interface, which led within a few hours of aging to the development of a compressive stress parallel to the Cu/Sn interface in the Sn layer. One day after aging at room-temperature whisker formation occurred on the surface of the Sn layer. It was shown that whisker growth is associated with long-range Sn diffusion parallel to the Cu/Sn interface. Sn layers of the same thickness sputter deposited on pure Si substrates exhibited throughout the same aging time at room temperature a tensile stress parallel to the Cu/Sn interface (no intermetallic phase formation took place) and whisker formation did not occur. The interrelationship of intermetallic compound formation, stress development, and whisker growth is discussed.

Reproducibility of vacuum deposited films of amorphous ZnTe

1981 ◽  
Vol 59 (7) ◽  
pp. 924-928 ◽  
Author(s):  
C. J. Moore ◽  
B. S. Bharaj ◽  
D. E. Brodie
Keyword(s):  
Electrical Conductivity ◽  
High Purity ◽  
Vacuum Deposition ◽  
Amorphous Films ◽  
Deposition Parameters ◽  
Ambient Gases ◽  
Residual Gas ◽  
First Time ◽  
Deposited Films ◽  
Better Than

The temperature dependence of the electrical conductivity of high purity amorphous ZnTe films has been measured and compared for films produced in the same way, and some films produced with different deposition parameters. We have demonstrated (probably for the first time) that pure vacuum deposited amorphous films can be fabricated with sample conductivities reproduced to better than a factor of two (14 samples over a two year period) between ~100 and ~400 K. This work was made possible with the help of a microprocessor monitored vacuum deposition system with a base pressure of 10−9 Torr. In addition, it is shown that samples fabricated in a system at a pressure of 10−6 Torr have conductivities which depend on the nature of the residual gas in the system because the sample conductivity varies significantly when different ambient gases are introduced.

Tribological Properties of Sputter-Deposited MoS2 Films Containing Titanium

2005 ◽  
Vol 890 ◽  
Author(s):  
James Krzanowski ◽  
Dyumani Nunna
Keyword(s):  
Tribological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Frictional Properties ◽  
Crystalline Films ◽  
Low Humidity ◽  
Sputter Deposited ◽  
Pin On Disk ◽  
Deposited Films ◽  
Ti Films

ABSTRACTThe tribological properties of sputter-deposited MoS2 and MoS2-Ti films were investigated in this study. The deposited films were characterized using microprobe analysis for composition and x-ray diffraction (XRD) for structure. The frictional properties of the films were examined using a pin-on-disk (POD) with counterfaces of 440C steel, aluminum, tungsten carbide and alumina. The tests were run under low (25%), medium (50%) and high (70%) humidity levels. MoS2 films without Ti were first examined under cyclic humidity conditions between 25 and 50% R/H. The results showed that for steel, WC and alumina counterfaces, the effect of the higher humidity was to increase the friction, but lower friction could be recovered when the humidity was reduced back to 25%. For films containing Ti, the best results were obtained at a concentration of 20 at. % Ti. These films performed well for steel and WC counterfaces, but poorly against aluminum. The effect of deposition temperature (up to 450oC) was examined for MoS2 and MoS2-5% Ti films. Higher temperatures yielded more crystalline films, but the addition of Ti partially countered this effect. The POD test showed that at medium humidity levels the friction decreased with temperature, but increased slightly when tested under low humidity. In all cases, the 5% Ti-containing films had a fiction coefficient of about 0.1 below that for films without Ti.

Characteristics of tin whiskers formed on sputter-deposited films—an aging study

2004 ◽  
Vol 19 (3) ◽  
pp. 689-692 ◽  
Author(s):  
J.P. Winterstein ◽  
J.B. LeBret ◽  
M.G. Norton
Keyword(s):  
Room Temperature ◽  
Continuous Process ◽  
Nucleation And Growth ◽  
Tin Whiskers ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Aging Study ◽  
Sputter Deposited ◽  
Deposited Films

Tin whiskers formed on sputter-deposited films on Muntz metal substrates have been examined following long-term aging at room temperature. It was found that while the initial annealing conditions determined the original nucleation and growth rates, whisker nucleation and growth was a continuous process and appeared to be occurring throughout the duration of the study. Whisker densities increased for all samples during aging, and samples that initially showed no whiskers during high-temperature annealing had a population density of 2.5 mm−2 after storage for 15 months.

Characterization of rf-sputtered HfMgZnO thin films

2012 ◽  
Vol 1432 ◽  
Author(s):  
Hantsun Chung ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Hafnium Oxide ◽  
Short Range ◽  
Room Temperature ◽  
Visible Region ◽  
Glass Substrates ◽  
Sputtered Films ◽  
Peak Intensity ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTMgZnO becomes amorphous or short-range-ordered with the addition of hafnium oxide. The films are rf-sputter deposited onto glass substrates (Eagle 2000, Corning Inc.) from Mg0.05HfxZn0.95-xO targets (x=0, 0.025, 0.05, 0.075, 0.1) in pure Ar ambient at room temperature. The sputtered Mg0.05Zn0.95O exhibits strong (002) preferred orientation with XRD peak located at 2θ=34.16o. The XRD peak intensity is also greatly reduced, indicating the material amorphorization proceeds with the addition of Hf. The grain size, estimated from the full-width-at-half-maximum (FWHM) of the (002) XRD peak, decreases from 24.1 to 3.3 nm as the Hf content x increases from 0 to 0.025 in Mg0.05HfxZn0.95-xO. No sharp XRD peaks are detected in the as-sputtered films when more than 5.0 at.% Hf are added into the materials. The films remain in amorphous or short-range-ordered states after annealing at 600 oC for 30 mins. All Mg0.05HfxZn0.95-xO films (100 nm in thickness) are highly transparent (> 80 %) in the visible region from 400 to 800 nm and have sharp absorption edges in the UV region. The tauc bandgap ΔE (eV), as a function of hafnium composition x, is fitted as ΔE=3.336+6.08x for room temperature as-deposited films, and ΔE=3.302+2.60x for films after 30 min 600 oC annealing. The annealing process decreases the bandgap shift caused by the incorporation of Hf in the materials.

The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors

2005 ◽  
Vol 905 ◽  
Author(s):  
Burag Yaglioglu ◽  
Hyo-Young Yeom ◽  
Roderic Beresford ◽  
David Paine
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Active Matrix ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
P Type

AbstractThin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (∼20cm2/Vs) and high on/off ratio (∼108) and, as such, appear to be well suited for active matrix TFT applications.

Preparation of FeCoZrBCu Thin Films and their Effect of Microstructure on Magnetic Properties

2007 ◽  
Vol 546-549 ◽  
pp. 2163-2166
Author(s):  
Jia Ping Cui ◽  
Li Zhong ◽  
Xiao Fang Bi
Keyword(s):  
Magnetic Properties ◽  
Room Temperature ◽  
Amorphous State ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Cu Films ◽  
Si Substrates ◽  
Transmission Electron ◽  
Deposited Films

In this work, (Fe,Co)–Zr–B–Cu films have been deposited on glass and Si substrates by DC magnetron sputtering method. X-ray diffraction analysis was used to identify the structure of the films. A transmission electron microscope (TEM) was employed to observe the microstructure for the films. Magnetic properties at room temperature were investigated by a Vibrating Sample Magnetometer (VSM). It was obtained that the as-deposited films on glass and Si substrates were in an amorphous state. In addition, it has been found that the coercivity is dependent on film thicknesses.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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