Reproducibility of vacuum deposited films of amorphous ZnTe

1981 ◽  
Vol 59 (7) ◽  
pp. 924-928 ◽  
Author(s):  
C. J. Moore ◽  
B. S. Bharaj ◽  
D. E. Brodie
Keyword(s):  
Electrical Conductivity ◽  
High Purity ◽  
Vacuum Deposition ◽  
Amorphous Films ◽  
Deposition Parameters ◽  
Ambient Gases ◽  
Residual Gas ◽  
First Time ◽  
Deposited Films ◽  
Better Than

The temperature dependence of the electrical conductivity of high purity amorphous ZnTe films has been measured and compared for films produced in the same way, and some films produced with different deposition parameters. We have demonstrated (probably for the first time) that pure vacuum deposited amorphous films can be fabricated with sample conductivities reproduced to better than a factor of two (14 samples over a two year period) between ~100 and ~400 K. This work was made possible with the help of a microprocessor monitored vacuum deposition system with a base pressure of 10−9 Torr. In addition, it is shown that samples fabricated in a system at a pressure of 10−6 Torr have conductivities which depend on the nature of the residual gas in the system because the sample conductivity varies significantly when different ambient gases are introduced.

High Purity Titanium Silicide Films Formed by Sputter Deposition and Rapid Thermal Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
T. Brat ◽  
J.C.S. Wei ◽  
J. Poole ◽  
D. Hodul ◽  
N. Parikh ◽  
...  
Keyword(s):  
Tensile Stress ◽  
High Purity ◽  
Room Temperature ◽  
Titanium Silicide ◽  
Amorphous Films ◽  
Si Substrates ◽  
Crystalline Films ◽  
Order Of Magnitude ◽  
Sputter Deposited ◽  
Deposited Films

ABSTRACTWe have investigated the formation of titanium silicide films sputter deposited from a high purity (99.995%) composite TiSi2.2 target. The films, sputtered at a rate of 3.7 nm/sec, were deposited on Si(100), Si02 , and N+ Poly-Si substrates at temperatures ranging from room temperature to 425°C. Room temperature depositions produced amorphous films, while heated substrate depositions formed crystalline films with a metastable C49 TiSi2 structure. Rapid thermal processing of these films at temperatures higher than 700°C resulted in the formation of a stable C54 TiSi2 structure. Stoichiometry of the deposited films over a 10 cm diameter wafer was found to be independent of the substrate temperature. Stress in the films was measured as a function of deposition and annealing parameters. The amorphous films showed a tensile stress of about 0.1 GPa, while films deposited on substrates at 425°C had an order of magnitude higher tensile stress level.The resistivity measured on the 400°C deposited films was about half of that obtained with the films deposited at roomtemperature. A comparison between films deposited on a hot substrate and those which were rapid thermal processed is presented.

scholarly journals Effect of Antibacterial Root Canal Sealer on Persistent Apical Periodontitis

Antibiotics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 741
Author(s):  
Zheng Wang ◽  
Ge Yang ◽  
Biao Ren ◽  
Yuan Gao ◽  
Xian Peng ◽  
...  
Keyword(s):  
Enterococcus Faecalis ◽  
Therapeutic Effect ◽  
Root Canal ◽  
Apical Periodontitis ◽  
Control Group ◽  
Root Canal Sealer ◽  
Root Canal Filling ◽  
First Time ◽  
Cone Beam Computer Tomography ◽  
Better Than

The infection of Enterococcus faecalis and its interacting microorganisms in the root canal could cause persistent apical periodontitis (AP). Antibacterial root canal sealer has favorable prospects to inhibit biofilms. The purpose of this study was to investigated the antibacterial effect of root canal sealer containing dimethylaminododecyl methacrylate (DMADDM) on persistent AP in beagle dogs for the first time. Persistent AP was established by a two-step infection with Enterococcus faecalis and multi-bacteria (Enterococcus faecalis, Lactobacillus acidophilus, Actinomycesnaeslundii, Streptococcus gordonii). Root canal sealer containing DMADDM (0%, 1.25%, 2.5%) was used to complete root canal filling. The volume of lesions and inflammatory grade in the apical area were evaluated by cone beam computer tomography (CBCT) and hematoxylin-eosin staining. Both Enterococcus-faecalis- and multi-bacteria-induced persistent AP caused severe apical destruction, and there were no significant differences in pathogenicity between them. DMADDM-modified sealer significantly reduced the volume of periapical lesion and inflammatory grade compared with the control group, among them, the therapeutic effect of the 2.5% group was better than the 1.25% group. In addition, E.faecalis-induced reinfection was more sensitive to the 2.5% group than multi-bacteria reinfection. This study shows that root canal sealer containing DMADDM had a remarkable therapeutic effect on persistent AP, especially on E. faecalis-induced reinfection.

scholarly journals CPC2 Reduction with Hipparcos and Proper Motions in The Southern Hemisphere

1998 ◽  
Vol 11 (1) ◽  
pp. 551-551
Author(s):  
N. Zacharias ◽  
M.I. Zacharias ◽  
C. de Vegt ◽  
C.A. Murray
Keyword(s):  
Southern Hemisphere ◽  
Systematic Errors ◽  
Reference Star ◽  
Proper Motions ◽  
Positional Accuracy ◽  
Star Catalog ◽  
Naval Observatory ◽  
Celestial Reference System ◽  
First Time ◽  
Better Than

The Second Cape Photographic Catalog (CPC2) contains 276,131 stars covering the entire Southern Hemisphere in a 4-fold overlap pattern. Its mean epoch is 1968, which makes it a key catalog for proper motions. A new reduction of the 5687 plates using on average 40 Hipparcos stars per plate has resulted in a vastly improved catalog with a positional accuracy of about 40 mas (median value) per coordinate, which comes very close to the measuring precision. In particular, for the first time systematic errors depending on magnitude and color can be solved unambiguously and have been removed from the catalog. In combination with the Tycho Catalogue (mean epoch 1991.25) and the upcoming U.S. Naval Observatory CCD Astrograph Catalog (UCAC) project proper motions better than 2 mas/yr can be obtained. This will lead to a vastly improved reference star catalog in the Southern Hemisphere for the final Astrographic Catalogue (AC) reductions, which will then provide propermotions for millions of stars when combined with new epoch data. These data then will allow an uncompromised reduction of the southern Schmidt surveys on the International Celestial Reference System (ICRS).

scholarly journals Investigation of Solubility Behavior of Canagliflozin Hydrate Crystals Combining Crystallographic and Hirshfeld Surface Calculations

Molecules ◽  
2021 ◽  
Vol 26 (2) ◽  
pp. 298
Author(s):  
Yefen Zhu ◽  
Yanlei Kang ◽  
Ling Zhu ◽  
Kaxi Yu ◽  
Shuai Chen ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Intermolecular Forces ◽  
Hirshfeld Surface ◽  
Reversible Inhibitor ◽  
Solubility Behavior ◽  
Hydrogen Bond Networks ◽  
Solvent Molecules ◽  
First Time ◽  
Better Than

Canagliflozin (CG) was a highly effective, selective and reversible inhibitor of sodium-dependent glucose co-transporter 2 developed for the treatment of type 2 diabetes mellitus. The crystal structure of CG monohydrate (CG-H2O) was reported for the first time while CG hemihydrate (CG-Hemi) had been reported in our previous research. Solubility and dissolution rate results showed that the solubility of CG-Hemi was 1.4 times higher than that of CG-H2O in water and hydrochloric acid solution, and the dissolution rates of CG-Hemi were more than 3 folds than CG-H2O in both solutions. Hirshfeld surface analysis showed that CG-H2O had stronger intermolecular forces than CG-Hemi, and water molecules in CG-H2O participated three hydrogen bonds, forming hydrogen bond networks. These crystal structure features might make it more difficult for solvent molecules to dissolve CG-H2O than CG-Hemi. All these analyses might explain why the dissolution performance of CG-Hemi was better than CG-H2O. This work provided an approach to predict the dissolution performance of the drug based on its crystal structure.

An Expert Software for Multi-Layer Coatings Design in Surface Engineering

2008 ◽  
Vol 595-598 ◽  
pp. 583-591 ◽  
Author(s):  
Céline Bondoux ◽  
Christophe Degrandcourt ◽  
George Ailinca ◽  
Pierre D'Ans ◽  
Marc Degrez ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Expert System ◽  
Surface Engineering ◽  
Corrosion And Wear ◽  
Surface Finishing ◽  
Future Developments ◽  
First Time ◽  
Layer Coating ◽  
Main Operation

For the first time, a unique expert system able to give assistance to designers in surface engineering has been built. Not only is this software able to provide multi-layer coating solutions, but it is also able to rank different solutions according to their technico-economical interest. In addition to its ability to solve corrosion and wear concerns, it is also able to deal with surface finishing properties (like brightness, weldability, electrical conductivity, biocompatibility, …). This paper describes the structure of this expert system together with its main operation principles and future developments.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

ELECTRONIC STATE CALCULATION OF MANGANESE DIOXIDE ELECTRODE WITH ADDITIVE TRANSITION METALS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4255-4260 ◽  
Author(s):  
BONG-SEO KIM ◽  
SU-DONG PARK ◽  
HEE-WOONG LEE ◽  
DONG-YOON LEE ◽  
WON-SUB CHUNG
Keyword(s):  
Electrical Conductivity ◽  
Transition Metals ◽  
Theoretical Calculation ◽  
Manganese Dioxide ◽  
Cluster Model ◽  
Electronic States ◽  
Deposition Method ◽  
Energy Band Gap ◽  
Anodic Deposition ◽  
Better Than

The electronic states of manganese dioxide substituted with transition metals were theoretically calculated by DV-Xα method, cluster model was Mn 15 O 56 and Mn 14 XO 56 (X = transition metal). The energy band gap of manganese-X oxides is lower than that of manganese dioxide from theoretical calculation. Also it is identified that the electrical conductivity of manganese-tungsten oxide is better than that of manganese dioxide from experiment of anodic deposition method. It is confirmed that the theoretical calculation coincides with experimental results.

Research of the Workpiece-Stage Control System Based on the ACR9000 in the Composite Coating Equipment of MEVVAII and FAD

2013 ◽  
Vol 668 ◽  
pp. 410-414
Author(s):  
Rui Xia Zhang ◽  
Bin Liao ◽  
Zhi Guo Liu ◽  
Xian Ying Wu
Keyword(s):  
Control System ◽  
Servo Control ◽  
Uniform Rotation ◽  
Coating Films ◽  
Servo Control System ◽  
Motion Modes ◽  
Speed Rotation ◽  
Micro Tools ◽  
First Time ◽  
Better Than

In order to realize the extensive application of technologies of MEVVAII and FAD, the composite equipment has been developed for surface modification and coating films. In this paper, for the first time, the servo control system based on ACR9000 has been used to control workpiece-stage of the composite equipment. Eight target disks are installed on workpiece-stage. Each of target disks can be mounted about 1300 PCB micro tools. So, the equipment can satisfy the requirement for mass production. Experimental results show that the coating unevenness is less than ±14%, better than those of traditional equipments which is less than ±29%. The main purpose of the paper is to introduce the design of workpiece-stage and its three motion modes of rotary positioning, uniform rotation and variable speed rotation, and coating effects corresponding to three motion modes have been verified by experiments.

scholarly journals Growth without Postannealing of Monoclinic VO2 Thin Film by Atomic Layer Deposition Using VCl4 as Precursor

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 431 ◽  
Author(s):  
Wen-Jen Lee ◽  
Yong-Han Chang
Keyword(s):  
Vanadium Dioxide ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Temperature Dependent ◽  
Vanadium Compounds ◽  
Multifunctional Material ◽  
Layer Deposition ◽  
Vanadium Tetrachloride ◽  
First Time ◽  
Deposited Films

Vanadium dioxide (VO2) is a multifunctional material with semiconductor-to-metal transition (SMT) property. Organic vanadium compounds are usually employed as ALD precursors to grow VO2 films. However, the as-deposited films are reported to have amorphous structure with no significant SMT property, therefore a postannealing process is necessary for converting the amorphous VO2 to crystalline VO2. In this study, an inorganic vanadium tetrachloride (VCl4) is used as an ALD precursor for the first time to grow VO2 films. The VO2 film is directly crystallized and grown on the substrate without any postannealing process. The VO2 film displays significant SMT behavior, which is verified by temperature-dependent Raman spectrometer and four-point-probing system. The results demonstrate that the VCl4 is suitably employed as a new ALD precursor to grow crystallized VO2 films. It can be reasonably imagined that the VCl4 can also be used to grow various directly crystallized vanadium oxides by controlling the ALD-process parameters.

scholarly journals Анизотропия анионной проводимости в монокристаллах суперионного проводника CeF-=SUB=-3-=/SUB=-

2021 ◽  
Vol 63 (9) ◽  
pp. 1376
Author(s):  
Н.И. Сорокин ◽  
В.В. Гребенев ◽  
Д.Н. Каримов
Keyword(s):  
Electrical Conductivity ◽  
Atomic Structure ◽  
Unit Cell ◽  
Conductivity Measurements ◽  
Weak Anisotropy ◽  
Tysonite Structure ◽  
Maximum Value ◽  
Anisotropy Effect ◽  
First Time ◽  
Anionic Conductivity

The anisotropy of anionic conductivity in crystals of a superionic conductor CeF3 with the tysonite structure (sp. gr. P-3с1) has been studied for the first time. The conductivity measurements at temperatures from 300 K to 600 K were carried out along the principal a- and c-axes of trigonal unit cell of the crystal. The maximum value of electrical conductivity is observed along the c-axis. The superionic CeF3 crystals have the weak anisotropy of electrical conductivity equal to σ||c/σ||a = 2.4 and σ||c = 5.6 10–4 S/cm at 500 K. The anisotropy effect of anionic conductivity in individual fluorides with the tysonite structure is discussed in connection with the peculiarities of their atomic structure.

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