Growth and Characterization of GaAs Single Crystals

MRS Bulletin ◽  
1988 ◽  
Vol 13 (10) ◽  
pp. 36-43 ◽  
Author(s):  
A.S. Jordan ◽  
J.M Parsey
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Bipolar Transistors ◽  
High Electron ◽  
Type Conversion ◽  
Light Emitting ◽  
Microwave Monolithic Integrated Circuits ◽  
Si Doped

From a commercial viewpoint, gallium arsenide (GaAs) is currently the leading member of the III-V compound family. Oriented substrates, cut and polished from single-crystal boules, form the materials foundation for a rapidly maturing technology of high speed and high frequency electronic devices and circuits. The initial thrust of GaAs applications was in high powered lasers and light-emitting diodes (LEDs) fabricated on n-type (Si-doped) GaAs wafers grown by the horizontal Bridgman technique. One of the important benefits of using GaAs is the high electron mobility compared to Si. This property has driven the development of low noise and power field-effect transistors (FETs) for microwave applications. The semi-insulating substrate requirement (>107 Ω-cm) was initially met by chromium doping. Currently, the interest is focused on MMIC (microwave monolithic integrated circuits), MIMIC (millimeter microwave ICs), analog ICs for lightwave transmitters and receivers, and digital ICs. The digital circuits have been realized with ion-implanted FETs, selectively doped heterostructure transistors (SDHTs), and heterostructure bipolar transistors (HBTs). Presently, most of the semi-insulating (SI) material processed by the industry is nominally undoped, and grown by the liquid encapsulated Czochralski (LEC) technique. The SI behavior is attained via a delicate balance of deep EL2 donors and carbon acceptors, avoiding chromium in order to eliminate the anomalous out-diffusion and type-conversion associated with this dopant.GaAs wafers up to 4 inches in diameter, with electrical properties homogenized by whole ingot annealing, are currently available from U.S. domestic and overseas suppliers. However, the overall quality is compromised by the large dislocation densities, varying 104 – 105/cm2.

scholarly journals Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits

2015 ◽  
Vol 16 (1) ◽  
pp. 221-229
Author(s):  
S.P. Novosyadlyy ◽  
A.M. Bosats'kyy
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Effective Rate ◽  
Bipolar Transistors ◽  
Hot Electron ◽  
Silicon Devices ◽  
Heterostructure Field Effect Transistors ◽  
Gap Technology

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons,  decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and  small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

PRESENT STATUS AND FUTURE PROSPECTS OF HIGH-SPEED LIGHTWAVE ICS BASED ON INP

1998 ◽  
Vol 09 (02) ◽  
pp. 567-593 ◽  
Author(s):  
EIICHI SANO ◽  
KAZUO HAGIMOTO ◽  
YASUNOBU ISHII
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Field Effect Transistors ◽  
Light Wave ◽  
Bipolar Transistors ◽  
Current Status ◽  
Figures Of Merit ◽  
Heterostructure Field Effect Transistors ◽  
The Relationship

High-speed integrated circuits (ICs) are essential for expanding the capacity of light-wave communications. InP-based heterostructure field effect transistors (HFETs) and heterojunction bipolar transistors (HBTs) are very promising for producing high-speed digital and analog ICs. This paper reviews the current status of InP-based lightwave communication ICs in terms of device, circuit, and packaging technologies. A successful 40-Gbit/s, 300-km optical fiber transmission using InP HFET ICs demonstrates the feasibility of the ICs. Furthermore, we estimate future IC performance based on the relationship between electron device figures-of-merit and IC speed. To keep up with the performance trend, technological problems, like inter- and intra-chip interconnections, have to be solved.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Bipolar device technology challenge and opportunity

1985 ◽  
Vol 63 (6) ◽  
pp. 683-692 ◽  
Author(s):  
H. D. Barber
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Noise ◽  
Isolation Techniques ◽  
Propagation Delays ◽  
Technological Barriers ◽  
On Chip ◽  
Bipolar Device

Silicon bipolar device technologies provided 65% of the world's integrated circuits in 1983. Where low noise, high current, low or high voltage, high speed or low cost are required, bipolar technologies are used. This paper will review the present status of bipolar device technologies, which make possible 100-ps gate-propagation delays, 150-μm2 gate areas, 1-GHz bandwidth amplifiers, on-chip control of over 1-A, 350-V operation, 14-GHz fT's and 10-ns. analogue-to-8-bit digital conversion. These devices are realized because of advances in isolation techniques, chemical-vapor deposition, photolithography, diffusion, ion implantation, conductor–contact interconnection technology, etching processes, and materials preparation. This paper will discuss some of the fundamental problems, modelling difficulties, and technological barriers that will impact the future development of bipolar integrated circuits.

Si-Ge heterojunction bipolar technology for high-speed integrated circuits

1996 ◽  
Vol 74 (S1) ◽  
pp. 159-166
Author(s):  
D. C. Ahlgren ◽  
S. J. Jeng ◽  
D. Nguyen-Ngoc ◽  
K. Stein ◽  
D. Sunderland ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
High Performance ◽  
Full Range ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Voltage Controlled Oscillators ◽  
Sige Hbt ◽  
Trade Offs ◽  
Scale Integration

This review discusses the fundamentals of SiGe epitaxial base heterojunction bipolar transistor (HBT) technology that have been developed for use in analog and mixed-signal applications in the 1–20 GHz range. The basic principles of operation of the graded base SiGe HBT are reviewed. These principles are then used to explore the design optimization for analog applications. Device results are presented that illustrate some important trade-offs in device design. A discussion of the use of UHV/CVD for the deposition of the epitaxial base profile is followed by an overview of the integrated process. This process, which has been installed on 200 mm wafers in IBM's Advanced Semiconductor Technology Center in Hopewell Junction, N.Y., also includes a full range of support devices. The process has demonstrated SiGe HBT performance, reliability, and yield in a CMOS fabrication with the addition of only one tool for UHV/CVD deposition of the epi-base and, with minimal additional process steps, can be used to fabricate full BiCMOS designs. This paper concludes with a discussion of high-performance circuits fabricated to date, including ECL ring'oscillators, power amplifiers, low-noise amplifiers, voltage-controlled oscillators, and finally a 12-bit DAC that features nearly 3000 SiGe HBT devices demonstrating medium-scale integration.

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

scholarly journals Kurbanova. Design of energy-efficient high-speed computer equipment based on cost-effective light transistors

2021 ◽  
Vol 47 (4) ◽  
pp. 20-26
Author(s):  
H. M. Gadgiev ◽  
Sh. T. Ismailova ◽  
P. A. Kurbanova
Keyword(s):  
Energy Efficient ◽  
High Speed ◽  
High Efficiency ◽  
Cost Effective ◽  
Economic Benefits ◽  
Bipolar Transistors ◽  
Digital Information ◽  
Light Emitting ◽  
Information Signal ◽  
Speed Computer

Objective. The article deals with the formation of cost-effective light transistors for creating high-speed energy-efficient computer structures that can solve numerous problems with high speed and accuracy. For this purpose, various types of semiconductor structures are used that can emit and absorb photons for receiving and transmitting digital information.Methods. The use of mirror electrodes allows for repeated re-reflection of the generated photons inside the light transistor to recover all the generated energy into electricity. This increases the energy efficiency of the transistor as a whole and allows implementing computer devices with high efficiency in solving various tasks.Results. Most of the useful energy of the information signal is transferred from one electrode to another, and the movement has a higher speed due to the use of photons, rather than drifting electrons, and this indirectly increases the speed of the light transistor by several orders of magnitude and effectively solves the problem of implementing more powerful and high-speed transistors with greater economic benefits.Conclusion. Prospects for the implementation of high-speed energy-efficient computer structures based on both bipolar transistors and unipolar transistors, as well as thyristors, lasers, and other semiconductor components in light-emitting structures have been developed.

Implant-induced strain-relaxation in SiGe/Si layers

1993 ◽  
Vol 51 ◽  
pp. 1112-1113
Author(s):  
N. David Theodore ◽  
Gordon Tam
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Strain Relaxation ◽  
Base Material ◽  
Sige Layer ◽  
Bipolar Transistors ◽  
Leakage Currents ◽  
Extrinsic Base

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. SiGe is typically used as an epitaxial base material in HBTs. To obtain extremely high-performance bipolar-transistors it is necessary to reduce the extrinsic base-resistance. This can be done by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however with the use of implantation is that blanket implants have been found to enhance strain-relaxation of SiGe/Si. Strain relaxation will cause the bandgap-difference between Si and SiGe to decrease; this difference is maximum for a strained SiGe layer. The electrical benefits of using SiGe/Si arise largely from the presence of a significant bandgap-difference across the SiGe/Si interface. Strain relaxation reduces this benefit. Furthermore, once misfit or threading dislocations result (during strain-relaxation), the defects can give rise to recombination-generation in depletion regions of the device; high electrical leakage currents result.

SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI

2006 ◽  
Vol 16 (02) ◽  
pp. 723-732 ◽  
Author(s):  
JINMAN YANG ◽  
ASHA BALIJEPALLI ◽  
TREVOR J. THORNTON ◽  
JAMES VANDERSAND ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
Communication Systems ◽  
High Speed ◽  
Field Effect Transistors ◽  
Circuit Simulation ◽  
Drain Current ◽  
Low Noise ◽  
Measured Data ◽  
Silicon On Insulator ◽  
New Paradigm ◽  
Mixed Signal

Metal Semiconductor Field Effect Transistors fabricated using compound semiconductor materials have important applications in high-speed/low-noise communication systems. However, their integration densities are low compared to silicon technologies, and it is difficult to combine them with conventional CMOS for single-chip, mixed-signal circuit applications. In this paper we describe how silicon-on-insulator MESFETs can be fabricated alongside conventional MOSFETs using a commercially available silicon-on-insulator foundry. The process flow for the integrated MOSFETS and MESFETs is presented. Measurements from MESFETs fabricated using a commercial foundry demonstrate good depletion-mode device operation. The measured data confirms a square-law behavior for the saturated drain current, which can be reproduced using readily available MESFET models for Spice circuit simulation. The Spice model is applied to a simple differential-pair amplifier and the modeled results compared to measured data.

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