Multi-Voltage Variable Pipeline Routers with the Same Clock Frequency for Low-Power Network-on-Chips Systems

2016 ◽  
Vol E99.C (8) ◽  
pp. 909-917
Author(s):  
Akram BEN AHMED ◽  
Hiroki MATSUTANI ◽  
Michihiro KOIBUCHI ◽  
Kimiyoshi USAMI ◽  
Hideharu AMANO
Keyword(s):  
Low Power ◽  
Power Network ◽  
Clock Frequency

scholarly journals The Demonstration of S2P (Serial-to-Parallel) Converter with Address Allocation Method Using 28 nm CMOS Technology

2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh
Keyword(s):  
Integrated Circuits ◽  
Embedded System ◽  
Low Power ◽  
High Speed ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Clock Generation ◽  
Allocation Method ◽  
Evaluation Board ◽  
28 Nm

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.

Design of R3TOS based reliable low power network on chip

2017 ◽  
Author(s):  
N Poornima ◽  
Seetharaman Gopalakrishnan ◽  
Tughrul Arsalan ◽  
T. N. Prabakar ◽  
M. Santhi
Keyword(s):  
Low Power ◽  
Network On Chip ◽  
Power Network ◽  
On Chip

scholarly journals A Glitch-Free Novel DET-FF in 22 nm CMOS for Low-Power Application

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Sumitra Singar ◽  
N. K. Joshi ◽  
P. K. Ghosh
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Performance ◽  
Vlsi Design ◽  
Total System ◽  
Clock Frequency ◽  
Flip Flop ◽  
Digital Vlsi ◽  
Feedback Structure ◽  
Power Application

Dual edge triggered (DET) techniques are most liked choice for the researchers in the field of digital VLSI design because of its high-performance and low-power consumption standard. Dual edge triggered techniques give the similar throughput at half of the clock frequency as compared to the single edge triggered (SET) techniques. Dual edge triggered techniques can reduce the 50% power consumption and increase the total system power savings. The low-power glitch-free novel dual edge triggered flip-flop (DET-FF) design is proposed in this paper. Still now, existing DET-FF designs are constructed by using either C-element circuit or 1P-2N structure or 2P-1N structure, but the proposed novel design is designed by using the combination of C-element circuit and 2P-1N structure. In this design, if any glitch affects one of the structures, then it is nullified by the other structure. To control the input loading, the two circuits are merged to share the transistors connected to the input. In the proposed design, we have used an internal dual feedback structure. The proposed design reduces the delay and power consumption and increases the speed and efficiency of the system.

HIGH SPEED DIGITAL CIRCUIT TECHNOLOGY

1995 ◽  
Vol 06 (01) ◽  
pp. 163-210 ◽  
Author(s):  
STEPHEN I. LONG
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Material Properties ◽  
High Speed ◽  
Digital Circuit ◽  
Bipolar Transistor ◽  
Clock Frequency ◽  
Digital Integrated Circuits ◽  
Heterojunction Devices ◽  
Circuit Technology

The performance of high speed digital integrated circuits, defined here as those requiring operation at high clock frequency, is generally more sensitive to material properties and process techniques than ICs used at lower frequencies. Obtaining high speed and low power concurrently is especially challenging. Circuit architectures must be selected for the device and application appropriately. This paper presents simple models for high speed digital IC performance and applies these to the FET and bipolar transistor. Heterojunction devices are compared with those using single or binary materials. Circuits for high speed SSI and low power VLSI applications are described, and their performance is surveyed.

A LOW-POWER 12-BIT 250 KS/S CYCLIC ADC FOR LONG LINE ARRAY INFRARED SENSORS READOUT CIRCUIT

2011 ◽  
Vol 20 (01) ◽  
pp. 57-70 ◽  
Author(s):  
HONGLIANG ZHAO ◽  
YIQIANG ZHAO ◽  
PENG LI ◽  
JUNWEI JIANG ◽  
ZHISHENG ZHANG
Keyword(s):  
Low Power ◽  
Cmos Process ◽  
Readout Circuit ◽  
Clock Frequency ◽  
Infrared Sensors ◽  
Differential Nonlinearity ◽  
Line Array ◽  
Long Line ◽  
Correction Technique ◽  
Cyclic Adc

A 12-bit cyclic analog to digital converter (ADC) used in long line array infrared sensors readout circuit is presented. The architecture of a low-power amplifier shared with two groups of switched capacitors is used to reduce power consumption. By adding cross-connected switches, the amplifier's offset is effectively canceled out. The improved redundant signed digit (RSD) correction technique is employed to compensate for the error resulting from the comparator's offset in sub-ADC, and the correction technique can tolerate high level of switched capacitor mismatch error, as well. The converter manufactured with Chartered 0.35 μm CMOS process exhibits 0.92 LSB maximum differential nonlinearity (DNL) and 1.5 LSB maximum integral nonlinearity (INL). The ADC has a 69.3 dB signal to noise and distortion ratio (SNDR) at 250 kS/s sample rate and 3 MHz clock frequency. It dissipates 0.8 mW with 3.3 V supply and occupies 0.22 × 0.9 mm2.

AN ULTRA LOW-VOLTAGE/POWER-EFFICIENT ALL-DIGITAL DELAY LOCKED LOOP IN 55 nm CMOS TECHNOLOGY

2012 ◽  
Vol 21 (08) ◽  
pp. 1240025 ◽  
Author(s):  
CHUN-YUAN CHENG ◽  
JINN-SHYAN WANG ◽  
CHENG-TAI YEH
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Low Voltage ◽  
Cmos Technology ◽  
Maximum Frequency ◽  
Clock Frequency ◽  
Power Efficient ◽  
Delay Locked Loop ◽  
Measurement Results ◽  
Variation Tolerance

This paper presents an all-digital delay locked loop (ADDLL) that uses asynchronous-deskewing technology and achieves low power/voltage, small jitter, fast locking, and high process, voltage, and temperature (PVT)-variation tolerance. The measurement results show that the maximum frequency is 100 MHz at 0.35 V with 19 μW power dissipation, 62 ps peak-to-peak jitter, and 3 locking cycles. When operated at 0.5 V, the measured maximal operating clock frequency is 450 MHz with 12 ps peak-to-peak jitter, 6 locking cycles and 119 μW power dissipation. The ADDLL is fabricated with 55 nm CMOS technology, and the active area is only 0.019 mm2.

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