scholarly journals Microstrip Based Pressure Sensor Antenna for Harsh Environment Applications

2021 ◽  
Author(s):  
Muhabaw Amare Alebachew ◽  
Anil Kumar Nayak ◽  
Amalendu Patnaik
Keyword(s):  
Dielectric Constant ◽  
Resonant Frequency ◽  
Pressure Sensor ◽  
Applied Pressure ◽  
Substrate Material ◽  
Metal Plate ◽  
Harsh Environment ◽  
Copper Metal ◽  
Pressure Load ◽  
Resonance Frequencies

Abstract this paper is studied on a microstrip based pressure sensor for harsh environment applications which can sensing at a distance. A microstrip based pressure sensor for harsh environment was investigated with good results by using Rogers’s 3210 substrate material with a dielectric constant of 10.2, 1.28mm thickness and 2.4 GHz resonant frequency, and also both the patch side and the ground side are made from copper metal. The simulation of a proposed antenna was designed and tested by using HFSS software, the result of the designed antenna’s resonance frequency is inversely proportional with the displacement gap of the reflection plate and an antenna. The operating principles of this sensor, when a pressure (load) is applied on the reflection metal plate, the distance will decrease from the reflection plate and the resonant frequency will increase. Therefore, the applied pressure (load) can determined by measuring the changing resonance frequencies. Certainly, the simulation and the experimental results of performances and validates are clearly discussed.

scholarly journals An LC Wireless Passive Pressure Sensor Based on Single-Crystal MgO MEMS Processing Technique for High Temperature Applications

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6602
Author(s):  
Pinggang Jia ◽  
Jia Liu ◽  
Jiang Qian ◽  
Qianyu Ren ◽  
Guowen An ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Elevated Temperatures ◽  
Applied Pressure ◽  
Processing Technique ◽  
Substrate Material ◽  
Passive Pressure ◽  
Passive Sensing ◽  
Practical Engineering ◽  
First Time

An LC wireless passive pressure sensor based on a single-crystalline magnesium oxide (MgO) MEMS processing technique is proposed and experimentally demonstrated for applications in environmental conditions of 900 °C. Compared to other high-temperature resistant materials, MgO was selected as the sensor substrate material for the first time in the field of wireless passive sensing because of its ultra-high melting point (2800 °C) and excellent mechanical properties at elevated temperatures. The sensor mainly consists of inductance coils and an embedded sealed cavity. The cavity length decreases with the applied pressure, leading to a monotonic variation in the resonant frequency of the sensor, which can be retrieved wirelessly via a readout antenna. The capacitor cavity was fabricated using a MgO MEMS technique. This MEMS processing technique, including the wet chemical etching and direct bonding process, can improve the operating temperature of the sensor. The experimental results indicate that the proposed sensor can stably operate at an ambient environment of 22–900 °C and 0–700 kPa, and the pressure sensitivity of this sensor at room temperature is 14.52 kHz/kPa. In addition, the sensor with a simple fabrication process shows high potential for practical engineering applications in harsh environments.

scholarly journals An inductive-capacitive-circuit-based micro-electromechanical system wireless capacitive pressure sensor for avionic applications: Preliminary investigations, theoretical modelling and simulation examination of newly proposed methodology

2019 ◽  
Vol 52 (7-8) ◽  
pp. 1029-1038 ◽  
Author(s):  
Sumit Kumar Jindal ◽  
Ankush Mahajan ◽  
Sanjeev Kumar Raghuwanshi
Keyword(s):  
Resonant Frequency ◽  
Theoretical Estimate ◽  
Applied Pressure ◽  
Metal Electrode ◽  
Theoretical Modelling ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor ◽  
Aerospace Applications ◽  
Resonant Frequency Shift ◽  
Sensor Structure

Pressure is a key unit of measure in aerospace industries. Spontaneous precise measurement of pressure has to be compassed at locations where it is futile and impractical to couple the pressure responsive constituent to the conditional electronics or computational circuit by practicing standard cables and measurements prone to harsh environment. This paper introduces the design of a wireless pressure-monitoring system for aerospace applications in harsh environment. Traditionally, applied pressure deflects a delicate silicon diaphragm, altering the capacitance developed between it and metal electrode firm on a substrate. The LC circuit translates the pressure variation into the LC resonant frequency shift. This change is sensed remotely by virtue of inductance coupling, expelling the compulsion for wire connection rooted telemetry circuits. Novelty of our work rests in the fact that contrary to examining shift in the resonant frequency due to the applied pressure, we have put in effort to maintain resonant shifting equal to zero by varying the capacitance at the observer unit. This will allow pressure variations to be measured directly in terms of the capacitance variation at a fixed resonant frequency, which is 7.92 MHz in our context. According to the application domain (avionics), the proposed sensor structure is designed for functioning in the pressure range between (100 and 1140) mbar. The choice of design values for sensor parameters has been validated. The sensitivity is measured to be 1.746e−17 F/Pa over specified linear range which is shown to match a theoretical estimate realized by mathematical model. An in-depth, step by step derivation of performance parameters to achieve above-stated objective is shown for sensor under study. The results generated are modelled and examined using MATLAB. The analysis conducted dovetail perfectly with the modelled results.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

Development of circuit solution and design of capacitive pressure sensor array for applied robotics

2020 ◽  
Vol 8 (4) ◽  
pp. 296-307
Author(s):  
Konstantin Krestovnikov ◽  
Aleksei Erashov ◽  
Аleksandr Bykov
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
Sensor Array ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Fine Tuning ◽  
Capacitive Pressure Sensor ◽  
Cell Parameters ◽  
Linear Pattern ◽  
Sensor Structure

This paper presents development of pressure sensor array with capacitance-type unit sensors, with scalable number of cells. Different assemblies of unit pressure sensors and their arrays were considered, their characteristics and fabrication methods were investigated. The structure of primary pressure transducer (PPT) array was presented; its operating principle of array was illustrated, calculated reference ratios were derived. The interface circuit, allowing to transform the changes in the primary transducer capacitance into voltage level variations, was proposed. A prototype sensor was implemented; the dependency of output signal power from the applied force was empirically obtained. In the range under 30 N it exhibited a linear pattern. The sensitivity of the array cells to the applied pressure is in the range 134.56..160.35. The measured drift of the output signals from the array cells after 10,000 loading cycles was 1.39%. For developed prototype of the pressure sensor array, based on the experimental data, the average signal-to-noise ratio over the cells was calculated, and equaled 63.47 dB. The proposed prototype was fabricated of easily available materials. It is relatively inexpensive and requires no fine-tuning of each individual cell. Capacitance-type operation type, compared to piezoresistive one, ensures greater stability of the output signal. The scalability and adjustability of cell parameters are achieved with layered sensor structure. The pressure sensor array, presented in this paper, can be utilized in various robotic systems.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

Micromachined Pressure Sensors on Optical Fiber Tip

2009 ◽  
Vol 74 ◽  
pp. 149-152
Author(s):  
X.M. Zhang ◽  
M. Yu ◽  
Silas Nesson ◽  
H. Bae ◽  
A. Christian ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Pressure Sensor ◽  
Linear Response ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Outer Diameter ◽  
Sensor Element ◽  
Batch Fabrication ◽  
In Vitro Measurements

This paper reports the development of a miniature pressure sensor on the optical fiber tip for in vitro measurements of rodent intradiscal pressure. The sensor element is biocompatible and can be fabricated by simple, batch-fabrication methods in a non-cleanroom environment with good device-to-device uniformity. The fabricated sensor element has an outer diameter of only 366 μm, which is small enough to be inserted into the rodent discs without disrupting the structure or altering the intradiscal pressures. In the calibration, the sensor element exhibits a linear response to the applied pressure over the range of 0 - 70 kPa, with a sensitivity of 0.0206 μm/kPa and a resolution of 0.17 kPa.

Wireless LTCC-based capacitive pressure sensor for harsh environment

2013 ◽  
Vol 197 ◽  
pp. 30-37 ◽  
Author(s):  
Jijun Xiong ◽  
Ying Li ◽  
Yingping Hong ◽  
Binzhen Zhang ◽  
Tianhong Cui ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor

Preparation and Electromagnetic Properties of Al2O3/Ni Composites

2014 ◽  
Vol 602-603 ◽  
pp. 926-930
Author(s):  
Zhi Xue Qu ◽  
Qun Wang ◽  
Bin Pang ◽  
Xue Cheng Hou ◽  
Wei Pan
Keyword(s):  
Dielectric Constant ◽  
Electromagnetic Compatibility ◽  
Sintering Temperature ◽  
Substrate Material ◽  
Electromagnetic Properties ◽  
Ni Content

In this paper, a series of Al2O3/Ni composites with various content of Ni (0 vol%, 10 vol%, 20 vol%, 30 vol%, 40 vol% and 50 vol%) were prepared, and the effect of the methods and compositions on the density and electromagnetic properties was investigated. The results show that the density of the composites increases with the increasing sintering temperature as well as the increasing content of Ni. Moreover, the dielectric constant of the composites increases remarkably with the sintering temperature and the content of Ni, while the permeability shows an almost linear enhancement with the increase of Ni content. This suggests that the Al2O3/Ni composite can be expected to be a promising substrate material with certain electromagnetic compatibility.

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