scholarly journals Enhancing Precursor Quality of Cu-In-S Ternary Thin Films by Applying More Appropriate Deposition Procedure

2021 ◽  
Author(s):  
Hasan Yildirim ◽  
Ahmet Peksoz
Keyword(s):  
Thin Films ◽  
Deposition Potential ◽  
Band Gaps ◽  
Sem Images ◽  
Acidic Aqueous Solution ◽  
Mobility Data ◽  
Deposition Parameters ◽  
Copper Indium ◽  
P Type

Abstract Copper indium sulphur (CIS) thin films were electrochemically grown from an acidic aqueous solution including 10 mM CuCl2, 10 mM InCl3, 20 mM Na2S2O3 and 200 mM LiCl. Deposition potential is determined by means of cyclic voltammetry analysis. The precursor CIS thin films are produced at -1.10 V for 600 s, -0.90 V for 300 s and a mixed potential of -0.25 V for 150 s and -1.10 V for 150 s. It is reported that surface morphology and film stoichiometry vary remarkably with the deposition parameters. SEM images show a variation in the grain shape, homogeneity and agglomeration due to the different Cu/In ratio. The produced films have XRD peaks belonging to both CIS2 crystalline phase and S element. The produced CIS material at -1.1 V has a band gap of 1.66 eV. The CIS thin film produced at -0.9 V has three different band gaps such as 1.76, 2.59 and 2.85 eV. The CIS material produced by two steps has also three different band gaps between 1.59 and 2.74 eV. The CIS films are p-type, and resistivity and mobility data are in the range 6.56-8.61 Ωcm and 8.68-22.2 cm2/Vs, respectively. It is found that the acceptor concentration of CIS thin films varies between 2.48x1017 and 1.06x1018 cm-3. In summary, this study reports a procedure to produce high-quality precursor CIS thin films, highlighting a promising material to be used in heterostructure photovoltaic devices as a p-type absorber layer.

scholarly journals Structural and Morphological Properties of As-Deposited and Heat Treated Blended Graphene Oxide / Poly(3,4-Ethylenedioxythiophene)-Poly(Styrenesulfonate) Thin Films

2021 ◽  
pp. 4416-4424
Author(s):  
Saja Qasim ◽  
Ameer F. AbdulAmeer ◽  
Ali H A Jalaukhan
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Xrd Analysis ◽  
Morphological Properties ◽  
Sem Images ◽  
Force Microscopy ◽  
Atomic Force ◽  
Heat Treated ◽  
Spin Coater

    In this study the as-deposited and heat treated at 423K of conductive blend graphene oxide (GO)/ poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) thin films was prepared with different PEDOT:PSS concentration (0, 0.25, 0.5, 0.75 and 1)w/w on pre-cleaned glass substrate by spin coater. The XRD analysis indicate the existence of the preffered peak (001) of GO around 2θ=8.24° which is domain in all GO/ PEDOT:PSS films characterized for GO, this result approve the good quality of the PEDOT:PSS dispersion in GO, this peak shifted to the lower 2θ with increasing PEDOT:PSS concentration and after annealing process. The scanning electron microscopy (SEM) images and atomic force microscopy (AFM) clearly show the GO flakes and go to disappear with increasing the PEDOT:PSS concentration. 

scholarly journals Nanocrystalline Hexagonal Shaped CdS Thin Films for Photoconducting Application

2014 ◽  
Vol 36 ◽  
pp. 153-167
Author(s):  
S.M. Patil ◽  
P.H. Pawar
Keyword(s):  
Thin Films ◽  
Cadmium Sulphide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analytical Technique ◽  
Deposition Parameters ◽  
Cds Thin Films ◽  
Response And Recovery ◽  
Nanocrystalline Thin Films

Nanocrystalline thin films of cadmium sulphide were prepared by chemical bath deposition technique onto glass substrate at 60 °C. The deposition parameters were optimized to obtain good quality of nanocrystalline thin films such as, time, precursor concentration, temperature of deposition and pH of the solution. The studies on crystal structure, composition, surface morphology, electrical conductivity and photoconductivity of the films were carried out by using different analytical technique. Characterization includes X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Energy dispersive X-ray analysis (EDAX), Electrical and photoconductivity. The response and recovery time of the thin film were measured and presented.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

scholarly journals Latest Development on Pulsed Laser Deposited Thin Films for Advanced Luminescence Applications

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1078
Author(s):  
Simon N. Ogugua ◽  
Odireleng Martin Ntwaeaborwa ◽  
Hendrik C. Swart
Keyword(s):  
Thin Films ◽  
Academic Research ◽  
Pulsed Laser ◽  
Industrial Applications ◽  
Primary Objective ◽  
Basic Operation ◽  
Deposition Parameters ◽  
Deposition Techniques ◽  
Made In

Currently, pulsed laser deposition (PLD) is a widely used technique to grow thin films for academic research and for industrial applications. The PLD has superior advantages including versatility, control over the growth rate, stoichiometric transfer and unlimited degree of freedom in the ablation geometry compared to other deposition techniques. The primary objective of this review is to revisit the basic operation mechanisms of the PLD and discuss recent modifications of the technique aimed at enhancing the quality of thin films. We also discussed recent progress made in the deposition parameters varied during preparation of luminescent inorganic oxide thin films grown using the PLD technique, which include, among others, the substrate temperature. The advanced technological applications and different methods for film characterization are also discussed. In particular, we pay attention to luminescence properties, thickness of the films and how different deposition parameters affect these properties. The advantages and shortcomings of the technique are outlined.

Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

MRS Advances ◽  
2018 ◽  
Vol 3 (25) ◽  
pp. 1435-1442 ◽  
Author(s):  
Kazuma Takahashi ◽  
Yoshihiko Nakagawa ◽  
Kosuke O. Hara ◽  
Isao Takahashi ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Chemical Vapor ◽  
Hole Density ◽  
Simple Method ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Post Deposition

Abstract:A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

scholarly journals Titanium-Doped P-Type WO3 Thin Films for Liquefied Petroleum Gas Detection

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 727 ◽  
Author(s):  
Yuzhenghan He ◽  
Xiaoyan Shi ◽  
Kyle Chen ◽  
Xiaohong Yang ◽  
Jun Chen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Hole Concentration ◽  
Liquefied Petroleum Gas ◽  
Sem Images ◽  
X Ray ◽  
Glass Substrates ◽  
P Type ◽  
Wo3 Thin Films

Gas sensors are an important part of smart homes in the era of the Internet of Things. In this work, we studied Ti-doped P-type WO3 thin films for liquefied petroleum gas (LPG) sensors. Ti-doped tungsten oxide films were deposited on glass substrates by direct current reactive magnetron sputtering from a W-Ti alloy target at room temperature. After annealing at 450 °C in N2 ambient for 60 min, p-type Ti-doped WO3 was achieved for the first time. The measurement of the room temperature Hall-effect shows that the film has a resistivity of 5.223 × 103 Ωcm, a hole concentration of 9.227 × 1012 cm−3, and mobility of 1.295 × 102 cm2V−1s−1. X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the substitution of W6+ with Ti4+ resulted in p-type conductance. The scanning electron microscope (SEM) images show that the films consist of densely packed nanoparticles. The transmittance of the p-type films is between 72% and 84% in the visible spectra and the optical bandgap is 3.28 eV. The resistance increased when the films were exposed to the reducing gas of liquefied petroleum gas, further confirming the p-type conduction of the films. The p-type films have a quick response and recovery behavior to LPG.

scholarly journals Effects of Preparation Conditions on the CuInS2Films Prepared by One-Step Electrodeposition Method

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Rongfeng Guan ◽  
Liu Cao ◽  
Qian Sun ◽  
Yuebin Cao
Keyword(s):  
Thin Films ◽  
Sulfur Content ◽  
Indium Tin Oxide ◽  
Deposition Potential ◽  
X Ray Diffraction ◽  
Preparation Conditions ◽  
Sulfurization Temperature ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

CuInS2thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySzprecursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ratio, sulfurization temperature, and sulfur content on the CuInS2thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

Large-Area P-μc-Si:H Thin Films Prepared by VHF-PECVD and its Application in Micromorph Tandem Solar Module

2011 ◽  
Vol 347-353 ◽  
pp. 678-682
Author(s):  
Hui Zhi Ren ◽  
Ying Zhao ◽  
Xiao Dan Zhang ◽  
Hong Ge ◽  
Zong Pan Wang
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Dark Conductivity ◽  
Electrical Characteristics ◽  
Large Area ◽  
Solar Module ◽  
Deposition Parameters ◽  
P Type ◽  
Silane Concentration ◽  
Doping Ratio

Superscript textHigh conductivity,high crystalline volume fraction p-type microcrystaline silicon(p-μc-Si:H) thin films prepared by high-pressure VHF-PECVD are reported in this paper．The effects of the boron concentration, the silane concentration and the plasma power on the microstructures and electrical characteristics of P-μc-Si:H thin films are investigated. The results show that the microstructures and electrical characteristics of thin films relied on the deposition parameters. By optimizing the deposition parameters, very thin(31 nm) P-μc-Si:H thin films have been obtained at the doping ratio of 0.4% , SC at 1.2% and power at 1800W. The Xc of P-μc-Si:H thin films was 67% with 4.3% uniformity ,the dark conductivity was 0.68S/cm with 5.1% uniformity. By employing this P-μc-Si:H thin films, an initial conversion efficiency of 8.12% was obtained for a 0.79 m2a-Si:H/μc-Si:H tandem module by Al as back reflector.

scholarly journals Process dependent strain behaviour, fractal analysis, and bonding network of nc-Si(SiC) thin films

2021 ◽  
Author(s):  
Bibhu Prasad Swain
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Substrates ◽  
Sem Images ◽  
Thermal Chemical Vapor Deposition ◽  
Strain Behaviour ◽  
Dependent Strain ◽  
P Type

Abstract Nanocrystalline silicon embedded silicon carbide, nc-Si(SiC) thin films were deposited on p-type silicon substrates by using a thermal chemical vapor deposition (CVD) with different process temperatures varied from 700-1000oC. The SEM images reveal the Si particles are embedded with SiC thin films. The estimated lattice-strainof nc-Si(SiC) thin films from Williamson-Hall and Scherer formula was varied from 0.00227 to 0.00469 and 0.000855 to 0.00574 respectively. The Raman signature at the 1346.19 cm− 1, 1491.78 cm− 1 and 1570.94 cm− 1 bonding correspond to D, G-Si and G peaks respectively. The estimated band gap from Tauc’s plot of nc-Si(SiC) thin films are 3.17 to 2.87 eV respectively with increasing of process temperature. The observed crystalline size of nc-Si in nc-Si(SiC) is from 21 nm to 27 nm from 700 to 1000 oC respectively. The possible bonding network of core-orbital of Si(2p), C(1s), and O(1s) in the C: ZnO thin films have been discussed by deconvolution with the Origin 2018.

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