scholarly journals Thin films of copper phthalocyanine deposited by solution processing methods

2020 ◽  
Vol 38 (1) ◽  
pp. 79-90
Author(s):  
Hubert Gojzewski ◽  
Fatemeh Ghani ◽  
Mirosław Szybowicz

AbstractIn this work, we show and discuss the surface structure picture of copper phthalocyanine (CuPc) thin films deposited from trifluoroacetic acid (TFA) solvent onto silicon substrates at ambient conditions by four solution processing methods, namely drop-casting, dip-coating, spin-casting and spray-coating. The CuPc films were studied by AFM, as the main technique, and complemented by micro-Raman spectroscopy. Essentially, such thin films consist of CuPc molecular nanoribbons of a fixed ~1 nm thickness. CuPc molecules are arranged in an in-plane direction and formed in stacks under a defined tilt angle with respect to the substrate surface (monolayer) or underlying CuPc layer (multilayer). The film morphology takes various forms depending on the solution concentration, number of layers, and the deposition method. For instance, the morphology varies from very wide (~600 nm) but flat (~1 nm) ribbons for films prepared by dip-coating to crystallized rod-like features (multi-layered ribbons) when obtained by spray-coating. The factors studied in this paper should be taken into consideration in designing and controlling the criteria for rigorous CuPc film architecture.

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Yingjie Liao ◽  
Takeshi Fukuda ◽  
Norihiko Kamata

Spray coating technique has been established as a promising substitute for the traditional coating methods in the fabrication of organic devices in many reports recently. Control of film morphology at the microscopic scale is critical if spray-coated devices are to achieve high performance. Here we investigate electrospray deposition protocols for the fabrication of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with a single additive system under ambient conditions at room temperature. Critical deposition parameters including solution composition, applied voltage, and relative humidity are discussed systematically. Optimized process for preparing homogenous PEDOT:PSS thin films is applied to all-electrospray-coated organic photovoltaic cells and contributes to a power conversion efficiency comparable to that of the corresponding all-spin-coated device.


Química Nova ◽  
2021 ◽  
Author(s):  
David Castillo-Vilcatoma ◽  
Steveen Loarte ◽  
Arturo Fernandez-Chillcce ◽  
Elizabeth Pastrana ◽  
Roxana Pastrana

In this work, a self-made dip-coater equipment was developed for the fabrication of thin films. The assembly of the apparatus was carried out using simple mechanical and electronic pieces, recycle parts, and spending an inexpensive budget suitably. The production, software design, and features of the device were focused on the sol-gel dip-coating method, which involves gravitational draining and drying processes, as well as continued condensation reactions. The dip-coater was based on the Arduino microcontroller and a step motor. The immersion speed in the solution, the waiting time, and the withdrawal process were typed by a digital control panel, where the optimal range found for speed was 0.1 – 6.0 mm s-1 without vibration interferences. The total fabrication cost of the fabricated dip coater was less than 100 USD and the assembly process was not complicated. Finally, the performance of the dip-coater was evaluated through the deposit of copper oxide and iron oxide films on fluorine-doped tin oxide glass substrates layer by layer. The field emission scanning electron microscopy cross-section images confirm the formation of thin films with thickness in the nanoscale range, with good stability and sameness achieved through the control thickness during the dip-coating method under ambient conditions.


1988 ◽  
Vol 66 (10) ◽  
pp. 861-867 ◽  
Author(s):  
Daniel W. Hewak ◽  
John W. Y. Lit.

The properties of dip-coated thin films prepared from colloidal silica and titania solutions have been examined. The effects of withdrawal rate, heat treatment, and solution concentration on film thickness, refractive index, and other properties have been studied. Results show that extremely uniform and reproducible thin films with refractive indices between 1.46 and 2.08 and thicknesses up to 0.25 μm can be produced with a single dip. The refractive index of the SiO2:TiO2 composite films varies linearly with the volume fraction of TiO2, and the thickness varies linearly with withdrawal rate. The effects of drying on the final thin film properties are minimal; however, baking conditions have a significant effect, with films shrinking up to 50% and the refractive index increasing 40% during baking. The resulting films are hard, durable, and of good optical quality. We have studied these films for use as planar optical waveguides; however, the results are also applicable to films made for various uses such as optical coatings, filters, or protective layers.


2018 ◽  
Vol 2018 ◽  
pp. 1-12 ◽  
Author(s):  
Thammasak Rojviroon ◽  
Sanya Sirivithayapakorn

This experimental research comparatively investigates the Escherichia coli (E. coli) bacterial inactivation of the TiO2 photocatalytic thin films fabricated by the sol–gel dip-coating (SG) and low-temperature spray-coating (SP) techniques, with low-intensity (12 μW·cm−2) UVA-light-emitting diodes (UVA-LED) as the light source. The bacteriostatic experiments were undertaken using the nutrient broth (NB) and 0.85% NaCl with the initial E. coli concentrations of 102, 104, 106, and 108 CFU·mL−1. Moreover, the essential physical characteristics of the SG-TiO2 and SP-TiO2 photocatalytic thin films were determined prior to the experimental bacterial inactivation. The findings showed that both photocatalytic thin films possessed the ideal physical characteristics, especially the SP-TiO2 thin film. In addition, the viable cell counts, the cell morphology, and the bioluminescence-based adenosine triphosphate (ATP) indicated that both SG-TiO2 and SP-TiO2 thin films under UVA could effectively inhibit the proliferation of the E. coli cells in both NB and 0.85% NaCl.


2021 ◽  
pp. 1-3
Author(s):  
Jafarli Rufat ◽  

We have explored various solution- processing techniques to produce ZnS thin films on conducting (ITO) and silicon substrates along with ZnS-porous silicon composite films. All these samples obtained from different methods and chemical recipes were annealed under fixed ambient conditions and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet photocurrent response. Various characterizations reveal that the fabrication conditions and intrinsic defects of ZnS play a vital role in optoelectronic performance.


2000 ◽  
Vol 15 (4) ◽  
pp. 934-939 ◽  
Author(s):  
R. Resel ◽  
M. Ottmar ◽  
M. Hanack ◽  
J. Keckes ◽  
G. Leising

A series of copper phthalocyanine thin films were prepared on amorphous substrates using physical vapor deposition at ambient temperature. Different sample preparation conditions were used: the deposition rate was varied, and the substrates was static or rotating. The preferred orientation in the thin film was studied as a function of the deposition conditions. X-ray diffraction analysis was performed using θ/2θ and pole figure measurements. In the case of layers prepared at low deposition rates and using nonrotating substrates, a very strong fiber texture was detected with (100) crystallographic planes oriented preferably parallel to the substrate surface. At higher deposition rates, an additional second type of preferred orientation was observed with (110) planes oriented preferably parallel to the substrate surface. In the case of layers prepared with rotational substrates, the (110) type of preferred orientation was quantitatively more strongly developed. If we consider electronic band structure calculations, these results imply that the electron/hole transport through the thin films is enhanced for films prepared at high deposition rates and rotating substrates.


Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).


1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


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