scholarly journals Nanocrystal Quantum Dot Devices: How the Lead Sulfide (PbS) System Teaches Us the Importance of Surfaces

2021 ◽  
Vol 75 (5) ◽  
pp. 398-413
Author(s):  
Weyde M. M. Lin ◽  
Maksym Yarema ◽  
Mengxia Liu ◽  
Edward Sargent ◽  
Vanessa Wood

Semiconducting thin films made from nanocrystals hold potential as composite hybrid materials with new functionalities. With nanocrystal syntheses, composition can be controlled at the sub-nanometer level, and, by tuning size, shape, and surface termination of the nanocrystals as well as their packing, it is possible to select the electronic, phononic, and photonic properties of the resulting thin films. While the ability to tune the properties of a semiconductor from the atomistic- to macro-scale using solution-based techniques presents unique opportunities, it also introduces challenges for process control and reproducibility. In this review, we use the example of well-studied lead sulfide (PbS) nanocrystals and describe the key advances in nanocrystal synthesis and thin-film fabrication that have enabled improvement in performance of photovoltaic devices. While research moves forward with novel nanocrystal materials, it is important to consider what decades of work on PbS nanocrystals has taught us and how we can apply these learnings to realize the full potential of nanocrystal solids as highly flexible materials systems for functional semiconductor thin-film devices. One key lesson is the importance of controlling and manipulating surfaces.

2014 ◽  
Vol 2 (43) ◽  
pp. 9132-9140 ◽  
Author(s):  
Tsofnat Safrani ◽  
Tatipamula Arun Kumar ◽  
Matvey Klebanov ◽  
Neta Arad-Vosk ◽  
Rotem Beach ◽  
...  

Lead sulfide semiconducting thin films were chemically deposited on indium tin oxide coated glass plates for use as photoreceptor layers in conjugation with optically addressed spatial light modulators (OASLMs).


2001 ◽  
Vol 15 (17n19) ◽  
pp. 667-670 ◽  
Author(s):  
Y. RODRÍGUEZ-LAZCANO ◽  
M. T. S. NAIR ◽  
P. K. NAIR

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.


2017 ◽  
Vol 17 (01n02) ◽  
pp. 1760004 ◽  
Author(s):  
K. N. Chidambara Kumar ◽  
S. K. Khadeer Pasha ◽  
Kalim Deshmukh ◽  
K. Chidambaram ◽  
G. Shakil Muhammad

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV–vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03[Formula: see text]eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500–720[Formula: see text]nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.


2021 ◽  
Author(s):  
Kashif Tufail Chaudhary

The wet chemical processing opens the way to deposit thin film with the versatility and ease for a variety of materials. Liquid film deposition involves the application of a liquid precursor on a substrate which is then converted to the required coating material in a subsequent post-treatment step. Different non-vacuum solution based deposition techniques have been developed to grow thin films with high efficiency and functionality. Spin coating is one of an effective technique for thin film fabrication due to low cost, uniformity, less hazardous, and capability of easy scaling up. The typical process involves depositing a small amount of a fluid onto the center of a substrate and then spinning the substrate at high speed. Dip coating is another simple, cost effective route with feasibility to scale-up for commercial production. The dip coating process can be divided into three important technical stages, immersion, withdrawal and evaporation. The coating may be subjected to further heat treatment in order to burn out residual compounds and induce crystallization of the functional oxides. Spray coating is a promising technique to grow thin film in research and industry to prepare thin and thick films. It is an easy approach to fabricate thin film with uniform distribution at small scale from a few nanometers to micrometers in thickness. Inkjet printing is the emerging promising technique to develop large-scale, and flexible thin films. The inkjet printing process allow easy customization to grow variety of complex structures.


2013 ◽  
Vol 770 ◽  
pp. 358-361
Author(s):  
Rakdiaw Muangma ◽  
Voravit Kosalathip ◽  
Taswal Kumpeerapun ◽  
Pichet Limsuwan ◽  
Anne Dauscher

The aim of this experiment was to use mechanical chopper coupling with CO2 laser ablation to reduce thermal effect on thermoelectric thin film fabrication. The average power at 10 W of sealed tube CO2 laser together with the mechanical chopper was used for the thermoelectric (TE) thin film fabrication on silicon substrate in vacuum system. The 1.02 ms of pulse duration with 600 Hz of repetition rate were generated by the optimized speed of chopper at 4500 rpm with 8 channels of circular apertures which were used for the reduction of thermal effect on the bismuth antimony telluride (Bi-Sb-Te) target. The experiment results illustrated the thickness and the thin films fabricated by using 10 seconds of exposure time with the chopper, illustrated the smaller grain size than without the chopper while the thickness increased as the exposure time increased at constant speed of chopper. The output efficiency referred to the ratio of the thickness per target lost in unit time which increased from 19.6 to 181.8 μm/g per hour, due to the increase of the exposure time with the chopper while without the chopper resulted in 55.0 μm/g per hour caused by the higher temperature raise on the thermoelectric target which affected to the as-deposited thin films and the re-evaporation occurred. In this experiment, the chopper speed was measured by the digital tachometer, the target loss was analyzed by the digital analytical balance and the morphology of the 600 tilted surface of thin film was characterized by scanning electron microscope (SEM).


Author(s):  
Ayan Mukherjee ◽  
Partha Mitra

In recent years, ternary cadmium zinc sulfide (CdZnS) alloy compounds have been paid much attention in the fields of opto-electronics, particularly in photovoltaic devices. CdZnS thin films can be prepared by different techniques among which chemical methods have more advantages. Among different chemical method, Chemical Bath Deposition (CBD) is simple, low cost and widely applicable in industrial applications. In this chapter, we have discussed different methods of preparation of CdZnS thin film and their obtained properties. Also, the films are characterized by XRD, TEM, FESEM, EDAX, UV-Vis spectroscopy, etc. The properties of CdZnS gives insight of the properties of ternary thin film semiconductor and it will help to design semiconductor with tuneable properties for future applications in optoelectronic sector.


2014 ◽  
Vol 2 (43) ◽  
pp. 18463-18471 ◽  
Author(s):  
Kristin Bergum ◽  
Anna Magrasó ◽  
Helmer Fjellvåg ◽  
Ola Nilsen

Thin films of the proton conducting lanthanum tungstate phase, La28−xW4+xO54+δv2−δ, were fabricated by atomic layer deposition (ALD) and characterized by impedance spectroscopy.


MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 44-53 ◽  
Author(s):  
Catherine M. Cotell ◽  
Kenneth S. Grabowski

The successful use of pulsed laser deposition (PLD) to fabricate thin film superconductors has generated interest in using the technique to deposit thin films of other materials. The compositional fidelity between laser target and deposited film and the ability to deposit films in reactive gas environments make the PLD process particularly well suited to the deposition of complex multicomponent materials. Cheung and Sankur recently provided an excellent review of the PLD field, including a table of over 100 elements, inorganic and organic compounds, andsuperlattices that have been laser evaporated. Over 75 of these materials were deposited as thin films.The goal of this article is to provide an introduction to some of the newer applications of PLD for thin film fabrication. Four classes of materials are highlighted: ferroelectrics, bioceramics, ferrites, and tribological materials. Ferroelectric materials are structurally related to the high-temperature superconducting oxides and therefore are a direct extension of the recent superconducting oxide work. Bioceramics are dissimilar in structure and application to both ferroelectrics and superconducting oxides, but they are complex multicomponent oxides and, therefore, benefit from the use of PLD. Ferrites, also complex, multicomponent oxides, represent another exciting, but only lightly explored opportunity for PLD. In contrast, tribological materials are typically neither complex nor multicomponent. Nevertheless, interesting structures and properties have been produced by PLD. A few of the more important ones will be discussed. These different types of materials demonstrate the diversity of capabilities offered by PLD.


2019 ◽  
Vol 33 (17) ◽  
pp. 1950183
Author(s):  
M. M. Shi ◽  
J. Wang ◽  
S. R. Liu ◽  
X. M. Zhou ◽  
L. Liu ◽  
...  

In this paper, we successfully fabricate compact and uniform cadmium telluride (CdTe) films on flexible nickel foils using simple electrodeposition technique and sintering in a nitrogen atmosphere. The effect of the concentration of sodium tartrate on the structures and properties of the deposited CdTe thin films are studied. Various test techniques are used to characterize the results. The results of XRD analysis show that the highest crystallinity film is obtained when the added sodium tartrate concentration is 0.05 M. With the increase of sodium tartrate concentration, the composition of the film gradually changes from Te-rich to Cd-rich, and the thickness of the film becomes thin gradually. We also find that the CdTe thin film prepared under 0.05 M sodium tartrate shows the best optical and optoelectronic properties. Thus, a moderate amount of sodium tartrate is added into an acidic solution as surfactant for CdTe thin film fabrication. Moreover, sodium tartrate is easily volatilized from the film during the annealing process because of its small molecular weight, which can prevent the carbon precipitation.


2021 ◽  
Vol 2053 (1) ◽  
pp. 012008
Author(s):  
G M Albalawneh ◽  
M M Ramli ◽  
M ZM Zain ◽  
Z Sauli

Abstract Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.


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