Methodology for TEM Analysis of Barrier Profiles

2002 ◽  
Author(s):  
Tan-Chen Lee ◽  
Jui-Yen Huang ◽  
Li-Chien Chen ◽  
Ruey-Lian Hwang ◽  
David Su
Keyword(s):  
Sample Preparation ◽  
Profile Analysis ◽  
Image Interpretation ◽  
Sample Thickness ◽  
Image Resolution ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Preparation Methods ◽  
High Image Resolution ◽  
Common Technique

Abstract Device shrinkage has resulted in thinner barriers and smaller vias. Transmission Electron Microscopy (TEM) has become a common technique for barrier profile analysis because of its high image resolution. TEM sample preparation and image interpretation becomes difficult when the size of the small cylindrical via is close to the TEM sample thickness. Effects of different sample thickness and specimen preparation methods, therefore, have been investigated. An automatic FIB program has been shown to be useful in via sample preparation. Techniques for imaging a TEM specimen will be discussed in the paper. Conventional TEM bright field (BF) image is adequate to examine the barrieronly via; however, other techniques are more suitable for a Cu filled via.

SEM evaluation of the TEM cold-stage double-film specimen

1984 ◽  
Vol 42 ◽  
pp. 272-273
Author(s):  
Jayesh Bellare
Keyword(s):  
Spatial Distribution ◽  
Sample Preparation ◽  
Sample Thickness ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Liquid Sample ◽  
Thin Specimen ◽  
Sample Preparation Technique ◽  
Cold Stage ◽  
Film Specimen

Seeing is believing, but only after the sample preparation technique has received a systematic study and a full record is made of the treatment the sample gets.For microstructured liquids and suspensions, fast-freeze thermal fixation and cold-stage microscopy is perhaps the least artifact-laden technique. In the double-film specimen preparation technique, a layer of liquid sample is trapped between 100- and 400-mesh polymer (polyimide, PI) coated grids. Blotting against filter paper drains excess liquid and provides a thin specimen, which is fast-frozen by plunging into liquid nitrogen. This frozen sandwich (Fig. 1) is mounted in a cooling holder and viewed in TEM.Though extremely promising for visualization of liquid microstructures, this double-film technique suffers from a) ireproducibility and nonuniformity of sample thickness, b) low yield of imageable grid squares and c) nonuniform spatial distribution of particulates, which results in fewer being imaged.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Comparison of Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 357-358
Author(s):  
C. Amy Hunt
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mechanical Polishing ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Tem Analysis ◽  
The Past ◽  
Preparation Techniques

The demand for TEM analysis in semiconductor failure analysis is rising sharply due to the shrinking size of devices. A well-prepared sample is a necessity for getting meaningful results. In the past decades, a significant amount of effort has been invested in improving sample preparation techniques for TEM specimens, especially precision cross-sectioning techniques. The most common methods of preparation are mechanical dimpling & ion milling, focused ion beam milling (FIBXTEM), and wedge mechanical polishing. Each precision XTEM technique has important advantages and limitations that must be considered for each sample.The concept for both dimpling & ion milling and wedge specimen preparation techniques is similar. Both techniques utilize mechanical polishing to remove the majority of the unwanted material, followed by ion milling to assist in final polishing or cleaning. Dimpling & ion milling produces the highest quality samples and is a relatively easy technique to master.

Sample Preparation and Mounting

2010 ◽  
pp. 23-42
Keyword(s):  
Composite Materials ◽  
Sample Preparation ◽  
Optical Microscopy ◽  
Specimen Preparation ◽  
Preparation Methods ◽  
Pull Out ◽  
Sample Preparation Methods ◽  
Composite Samples

Abstract Specimen preparation is the first step that determines the quality of the microstructural information that can be obtained using optical microscopy. This chapter describes the sample preparation methods that are applicable to most types of composite materials containing short discontinuous or continuous fibers. The sample preparation methods cover documentation and labeling of samples, sectioning the composite, clamp-mounting composite samples, mounting composite samples in casting resins, and the addition of contrast dyes to casting resins. Information on the molds used for mounting composite materials is provided. The steps recommended to achieve a good mounted specimen without voids or specimen pull-out are also described. The chapter discusses the processes for clamping mounted composite samples in automated polishing heads and mounting composite materials for hand polishing. A summary of the mounting technique is also included.

Investigation of Protection Layer Materials for Ex-Situ Lift-Out TEM Sample Preparation with FIB for 14 nm FinFET

2014 ◽  
Author(s):  
H. Feng ◽  
G.R. Low ◽  
P.K. Tan ◽  
Y.Z. Zhao ◽  
H.H. Yap ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Sample Thickness ◽  
Ex Situ ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Protection Layer ◽  
Effect Transistor

Abstract With continuous scaling of CMOS device dimensions, sample preparation for Transmission Electron Microscope (TEM) analysis becomes increasingly important and challenging as the required sample thickness is less than several tens of nanometers. This paper studies the protection materials for FIB milling to increase the success rate of ex-situ ‘lift-out’ TEM sample preparation on 14nm Fin-Field Effect Transistor (FinFET).

Particle preparation for materials analysis (tutorial)

1992 ◽  
Vol 50 (2) ◽  
pp. 1788-1789
Author(s):  
Cynthia J. Zeissler
Keyword(s):  
Sample Preparation ◽  
Phase Distribution ◽  
Morphological Changes ◽  
Chemical Properties ◽  
Specimen Preparation ◽  
Sample Treatment ◽  
Preparation Methods ◽  
Materials Analysis ◽  
Particle Preparation ◽  
The Many

Often, good results in materials analysis depend on good sample preparation. Although sample preparation can often be simple and straightforward, particles sometimes present special challenges. Sometimes just a few tricks make the only difference between the success and failure of sample preparation and analysis. Without adequate insight and care in specimen preparation, there may be loss of sample, over-expended effort and loss of time, contamination (sample or instrument), adverse morphological changes, misrepresentation of elemental composition or phase distribution, and other artifacts. This tutorial will cover a variety of topics dealing with sample preparation methods, the tools, equipment and supplies used, and artifacts primarily of concern to analytical electron beam techniques.The many combinations of numerous parameters that can affect sample treatment and analysis make it difficult to produce a simple flow-chart for sample preparation. Various factors that determine optimal preparation methods include the physical state of the received sample (e.g., bulk, powder or single particle, wet or dry, homogeneous or heterogeneous), and the known chemical properties of the received sample.

Enhancement of Contrast in the CEM and STEM Using Bumpy Specimens and Employing the “Dappled Field” Mode of Operation

1974 ◽  
Vol 32 ◽  
pp. 552-553 ◽  
Author(s):  
L. Gandolfi ◽  
J. Reiffel
Keyword(s):  
Operating Mode ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Specimen Preparation ◽  
Field Mode ◽  
Preparation Methods ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Mode Of Operation ◽  
Scanning Transmission

Calculations have been performed on the contrast obtainable, using the Scanning Transmission Electron Microscope, in the observation of thick specimens. Recent research indicates a revival of an earlier interest in the observation of thin specimens with the view of comparing the attainable contrast using both types of specimens.Potential for biological applications of scanning transmission electron microscopy has led to a proliferation of the literature concerning specimen preparation methods and the controversy over “to stain or not to stain” in combination with the use of the dark field operating mode and the same choice of technique using bright field mode of operation has not yet been resolved.

Transmission Electron Microscopy of an Aluminum-Silver-Stainless Steel Solid State Bond

1985 ◽  
Vol 43 ◽  
pp. 172-173
Author(s):  
M. J. Carr ◽  
J. F. Shewbridge ◽  
T. O. Wilford
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Specimen Preparation ◽  
Dimensional Control ◽  
Tem Analysis ◽  
Metal Parts ◽  
Dissimilar Metal ◽  
Transmission Electron ◽  
Short Time

Strong solid state bonds are routinely produced between physical vapor deposited (PVD) silver coatings deposited on sputter cleaned surfaces of two dissimilar metal parts. The low temperature (200°C) and short time (10 min) used in the bonding cycle are advantageous from the standpoint of productivity and dimensional control. These conditions unfortunately produce no microstructural changes at or near the interface that are detectable by optical, SEM, or microprobe examination. Microstructural problems arising at these interfaces could therefore easily go undetected by these techniques. TEM analysis has not been previously applied to this problem because of the difficulty in specimen preparation. The purpose of this paper is to describe our technique for preparing specimens from solid state bonds and to present our initial observations of the microstructural details of such bonds.

Scanning electron microscopy of human iliac bone by a simple preparation method

1990 ◽  
Vol 48 (3) ◽  
pp. 226-227
Author(s):  
Toshihiko Takita ◽  
Tomonori Naguro ◽  
Toshio Kameie ◽  
Akihiro Iino ◽  
Kichizo Yamamoto
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Preparation Method ◽  
Specimen Preparation ◽  
Real Surface ◽  
Public Attention ◽  
Preparation Methods ◽  
The Real ◽  
Simple Preparation ◽  
Scanning Electron

Recently with the increase in advanced age population, the osteoporosis becomes the object of public attention in the field of orthopedics. The surface topography of the bone by scanning electron microscopy (SEM) is one of the most useful means to study the bone metabolism, that is considered to make clear the mechanism of the osteoporosis. Until today many specimen preparation methods for SEM have been reported. They are roughly classified into two; the anorganic preparation and the simple preparation. The former is suitable for observing mineralization, but has the demerit that the real surface of the bone can not be observed and, moreover, the samples prepared by this method are extremely fragile especially in the case of osteoporosis. On the other hand, the latter has the merit that the real information of the bone surface can be obtained, though it is difficult to recognize the functional situation of the bone.

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

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