Advanced Backside Defect Isolation Techniques Using Electron Beam Absorbed Current to Locate Metal Defectivity on Bulk and SOI Technology

2011 ◽  
Author(s):  
K. Erington ◽  
K. Dickson ◽  
G. Lange ◽  
J. Z. Garcia ◽  
J. Ybarra ◽  
...  
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Flip Chip ◽  
State Of The Art ◽  
Bulk Silicon ◽  
Silicon Technology ◽  
Isolation Techniques ◽  
Defect Isolation ◽  
Soi Technology ◽  
Preparation Equipment

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the backside of the device as a means of locating metallization defects on state of the art bulk silicon and SOI based microprocessor technologies. It builds on previous work which focused only on flip-chip SOI samples. This paper will demonstrate additional EBAC techniques and the ability to analyze devices processed in bulk silicon technology. Also included are the results obtained from an SOI device mounted in a non flipchip package type. Additional details related to sample preparation, equipment used, and improved practices are described.

Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

2010 ◽  
Author(s):  
K. Dickson ◽  
G. Lange ◽  
K. Erington ◽  
J. Ybarra
Keyword(s):  
Electron Beam ◽  
Flip Chip ◽  
Back Side ◽  
Soi Technology

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

Magnetic Current Imaging Power Short Localization

2015 ◽  
Author(s):  
J. Gaudestad ◽  
F. Rusli ◽  
A. Orozco ◽  
M.C. Pun
Keyword(s):  
Thermal Imaging ◽  
Flip Chip ◽  
Optical Microscope ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Multiple Fault ◽  
Defect Location ◽  
Isolation Techniques ◽  
Chip Sample

Abstract A Flip Chip sample failed short between power and ground. The reference unit had 418Ω and the failed unit with the short had 16.4Ω. Multiple fault isolation techniques were used in an attempt to find the failure with thermal imaging and Magnetic Current Imaging being the only techniques capable of localizing the defect. To physically verify the defect location, the die was detached from the substrate and a die cracked was seen using a visible optical microscope.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

scholarly journals Proximity Effect Aware Detailed Placement in Electron Beam Lithography

2018 ◽  
Vol 232 ◽  
pp. 04046
Author(s):  
Yuhang Chen ◽  
Zhipeng Huang ◽  
Xiongfeng Chen ◽  
Jianli Chen ◽  
Wenxing Zhu
Keyword(s):  
Electron Beam ◽  
Objective Function ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
State Of The Art ◽  
Experimental Result ◽  
Accurate Evaluation ◽  
Evaluation Scheme ◽  
Gauss Transform ◽  
Detailed Placement

Proximity effect is one of the most tremendous consequences that produces unacceptable exposures during electron beam lithography (EBL), and thus distorting the layout pattern. In this paper, we propose the first work which considers the proximity effect during layout stage. We first give an accurate evaluation scheme to estimate the proximity effect by fast Gauss transform. Then, we devote a proximity effect aware detailed placement objective function to simultaneously consider wirelength, density and proximity effect. Furthermore, cell swapping and cell matching based methods are used to optimize the objective function such that there is no overlap among cells. Compared with a state-of-the-art work, experimental result shows that our algorithm can efficiently reduce the proximity variations and maintain high wirelength quality at a reasonable runtime.

scholarly journals Overview of Sample Preparation and Chromatographic Methods to Analysis Pharmaceutical Active Compounds in Waters Matrices

Separations ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 16
Author(s):  
Cristina M. M. Almeida
Keyword(s):  
Sample Preparation ◽  
Water Cycle ◽  
State Of The Art ◽  
Pharmaceutical Compounds ◽  
Soil Environment ◽  
Extraction Techniques ◽  
Active Compounds ◽  
Preparation Methods ◽  
Current State ◽  
Potential Impact

In the environment, pharmaceutical residues are a field of particular interest due to the adverse effects to either human health or aquatic and soil environment. Because of the diversity of these compounds, at least 3000 substances were identified and categorized into 49 different therapeutic classes, and several actions are urgently required at multiple steps, the main ones: (i) occurrence studies of pharmaceutical active compounds (PhACs) in the water cycle; (ii) the analysis of the potential impact of their introduction into the aquatic environment; (iii) the removal/degradation of the pharmaceutical compounds; and, (iv) the development of more sensible and selective analytical methods to their monitorization. This review aims to present the current state-of-the-art sample preparation methods and chromatographic analysis applied to the study of PhACs in water matrices by pinpointing their advantages and drawbacks. Because it is almost impossible to be comprehensive in all PhACs, instruments, extraction techniques, and applications, this overview focuses on works that were published in the last ten years, mainly those applicable to water matrices.

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