scholarly journals Fabrication of CZTSe/CIGS Nanowire Arrays by One-Step Electrodeposition for Solar-Cell Application

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2778
Author(s):  
Roberto Luigi Oliveri ◽  
Bernardo Patella ◽  
Floriana Di Pisa ◽  
Alfonso Mangione ◽  
Giuseppe Aiello ◽  
...  

The paper reports some preliminary results concerning the manufacturing process of CuZnSnSe (CZTSe) and CuInGaSe (CIGS) nanowire arrays obtained by one-step electrodeposition for p-n junction fabrication. CZTSe nanowires were obtained through electrodeposition in a polycarbonate membrane by applying a rectangular pulsed current, while their morphology was optimized by appropriately setting the potential and the electrolyte composition. The electrochemical parameters, including pH and composition of the solution, were optimized to obtain a mechanically stable array of nanowires. The samples were characterized by scanning electron microscopy, Raman spectroscopy, and energy-dispersion spectroscopy. The nanostructures obtained showed a cylindrical shape with an average diameter of about 230 nm and a length of about 3 µm, and were interconnected due to the morphology of the polycarbonate membrane. To create the p-n junctions, first a thin film of CZTSe was electrodeposited to avoid direct contact between the ZnS and Mo. Subsequently, an annealing process was carried out at 500 °C in a S atmosphere for 40 min. The ZnS was obtained by chemical bath deposition at 95 °C for 90 min. Finally, to complete the cell, ZnO and ZnO:Al layers were deposited by magnetron-sputtering.

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4616
Author(s):  
Takashi Ikuno ◽  
Zen Somei

We have developed a simple method of fabricating liquid metal nanowire (NW) arrays of eutectic GaIn (EGaIn). When an EGaIn droplet anchored on a flat substrate is pulled perpendicular to the substrate surface at room temperature, an hourglass shaped EGaIn is formed. At the neck of the shape, based on the Plateau–Rayleigh instability, the EGaIn bridge with periodically varying thicknesses is formed. Finally, the bridge is broken down by additional pulling. Then, EGaIn NW is formed at the surface of the breakpoint. In addition, EGaIn NW arrays are found to be fabricated by pulling multiple EGaIn droplets on a substrate simultaneously. The average diameter of the obtained NW was approximately 0.6 μm and the length of the NW depended on the amount of droplet anchored on the substrate. The EGaIn NWs fabricated in this study may be used for three-dimensional wiring for integrated circuits, the tips of scanning probe microscopes, and field electron emission arrays.


Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 783
Author(s):  
Ying Duan ◽  
Chen Wang ◽  
Jian Hao ◽  
Yang Jiao ◽  
Yanchao Xu ◽  
...  

In this paper, we propose for the first time the synthesis of α-MoO3 nanorods in a one-step procedure at mild temperatures. By changing the growth parameters, the microstructure and controllable morphology of the resulting products can be customized. The average diameter of the as-prepared nanorods is about 200 nm. The electrochromic and capacitance properties of the synthesized products were studied. The results show that the electrochromic properties of α-MoO3 nanorods at 550 nm have 67% high transmission contrast, good cycle stability and fast response time. The MoO3 nanorods also exhibit a stable supercapacitor performance with 98.5% capacitance retention after 10,000 cycles. Although current density varies sequentially, the nanostructure always exhibits a stable capacitor to maintain 100%. These results indicate the as-prepared MoO3 nanorods may be good candidates for applications in electrochromic devices and supercapacitors.


Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.


2012 ◽  
Vol 476-478 ◽  
pp. 1519-1522 ◽  
Author(s):  
You Dao Lin ◽  
Xin Wen ◽  
Lai Sen Wang ◽  
Guang Hui Yue ◽  
Dong Liang Peng

Abstract. Single crystalline SnS nanowire arrays have been synthesized by sulfurating the Sn nanowire arrays which were prepared with the electrochemical deposition. The obtained SnS nanowire arrays are charactered with the XRD, SEM, TEM and the UV/Visible/NIR spectrophotometer. And the results indicate that the nanowires with an average diameter of 50 nm and a length of several tens micrometers, which same with the as prepared Sn nanowires. There are two absorption peaks indicate with the direct and indirect bandgaps about the orthorhombic SnS nanowire arrays.


2013 ◽  
Vol 114 (8) ◽  
pp. 084303 ◽  
Author(s):  
Lei Hong ◽  
Rusli ◽  
Xincai Wang ◽  
Hongyu Zheng ◽  
Hao Wang ◽  
...  

2003 ◽  
Vol 125 (16) ◽  
pp. 4724-4725 ◽  
Author(s):  
Haifeng Yang ◽  
Qihui Shi ◽  
Bozhi Tian ◽  
Qingyi Lu ◽  
Feng Gao ◽  
...  

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.


Nanomaterials ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 104 ◽  
Author(s):  
Rabeb El-Hnayn ◽  
Laetitia Canabady-Rochelle ◽  
Christophe Desmarets ◽  
Lavinia Balan ◽  
Hervé Rinnert ◽  
...  

2,2’-(Ethylenedioxy)bis(ethylamine)-functionalized graphene quantum dots (GQDs) were prepared under mild conditions from graphene oxide (GO) via oxidative fragmentation. The as-prepared GQDs have an average diameter of ca. 4 nm, possess good colloidal stability, and emit strong green-yellow light with a photoluminescence (PL) quantum yield of 22% upon excitation at 375 nm. We also demonstrated that the GQDs exhibit high photostability and the PL intensity is poorly affected while tuning the pH from 1 to 8. Finally, GQDs can be used to chelate Fe(II) and Cu(II) cations, scavenge radicals, and reduce Fe(III) into Fe(II). These chelating and reducing properties that associate to the low cytotoxicity of GQDs show that these nanoparticles are of high interest as antioxidants for health applications.


Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 860
Author(s):  
Jong In Jang ◽  
Hae-Chang Jeong

We have developed a very useful and cost-effective liquid crystal (LC) alignment layer of brush-coated TiO2 that is solution-processable for twisted nematic (TN) LC cells. TiO2 was prepared via the sol-gel method. The TiO2 solution was brush-coated on the substrate, followed by an annealing process. During the brush-coating process, a retracting force is generated on the deposited TiO solutions along the coating direction. The annealing process hardens the TiO2 and generates shearing stress arising from the retracting force along the brush-coating direction. The shearing stress created highly oriented nano/microstructure and uniformly aligned LCs with a stable pretilt angle of 0.6°. TN mode LC cells based on brush-coated TiO2 exhibited a performance of 12.5 ms of response and a threshold voltage of 1.8 V. Our brush-coated TiO2 incorporates two steps of the film deposition and alignment process into one step.


Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3788
Author(s):  
Henryk Kania ◽  
Mariola Saternus ◽  
Jan Kudláček

The paper presents results of studies on the impact of bismuth and tin additions to the Zn-AlNi bath on microstructure and corrosion resistance of hot dip galvanizig coatings. The structure at high magnifications on the top surface and cross-section of coatings received in the Zn-AlNiBiSn bath was revealed and the microanalysis EDS (energy dispersion spectroscopy) of chemical composition was determined. The corrosion resistance of the coatings was tested relatively in a neutral salt spray test (NSS), and tests in a humid atmosphere containing SO2. Electrochemical parameters of coatings corrosion were determined. It was found that Zn-AlNiBiSn coatings show lower corrosion resistance in comparison with the coatings received in the Zn-AlNi bath without Sn and Bi alloying additions. Structural research has shown the existence of precipitations of Sn-Bi alloy in the coating. It was found that Sn-Bi precipitations have more electropositive potential in relation to zinc, which promotes the formation of additional corrosion cells.


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