scholarly journals Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 899
Author(s):  
Hagyoul Bae ◽  
Geon-Beom Lee ◽  
Jae Hur ◽  
Jun-Young Park ◽  
Da-Jin Kim ◽  
...  
Keyword(s):  
Basic Structure ◽  
Memory Device ◽  
Carbon Layer ◽  
Oxide Semiconductor ◽  
Operating Voltage ◽  
High Current ◽  
Binary State ◽  
Junction Transistor ◽  
Pillar Structure ◽  
Physical And Chemical

For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open base (floating), which is equivalent to a gateless p-channel metal oxide semiconductor field-effect transistor (MOSFET). In the pillar formation, we adopted an amorphous carbon layer to protect the Ge surface from both physical and chemical damage by subsequent processes. A hysteric current-voltage (I-V) characteristic, which results in a sustainable binary state, i.e., high current and low current at the same voltage, can be utilized for a memory device. A lower operating voltage with high current was achieved, compared to a Si biristor, due to the low energy bandgap of pure Ge.

Synthesis of Cu2O and ZnO Nanowires and their Heterojunction Nanowires by Thermal Evaporation: A Short Review

2014 ◽  
Vol 71 (5) ◽  
Author(s):  
Muhammad Arif Khan ◽  
Samsudi Sakrani ◽  
Syahida Suhaima ◽  
Yussof Wahab ◽  
Rosnita Muhammad
Keyword(s):  
Physical Vapor Deposition ◽  
Thermal Evaporation ◽  
Chemical Properties ◽  
High Sensitivity ◽  
Short Review ◽  
Zno Nanowires ◽  
Oxide Semiconductor ◽  
The Individual ◽  
Photovoltaic Solar Cells ◽  
Physical And Chemical

One dimensional metal oxide semiconductor nanowires of copper (I) oxide (Cu2O), zinc oxide (ZnO), and their heterojunction nanowires possess remarkable physical and chemical properties. ZnO and Cu2O areattractive because the metals are abundant on earth, inexpensive, nontoxic.Moreover, these oxides have useful optical and electrical properties suitable for a wide variety of electrical devices, because their electrical conduction can be predictably controlled by doping. We here restrict the disscussion using a Hot Tube Vacuum Thermal Evaporation. The NWs in these devices will be studied by physical vapor deposition known as vapor-liquid-solid (VLS). Therefore, we explore conventional methods, particularly the VLS of growing ZnO and Cu2O nanowires which are assisted by the catalyst.  In this short review, we report the individual and combined (Cu2O/ZnO) junction nanowires by PVD method.  The main advantages of these composite nanowires are the natural p-n characteristics, the broad light absorption, the high sensitivity to humidity changes, and the fast dynamic response. The combination of all characteristics offered by Cu2O/ZnO nanowires can enable the fabrication of diverse sensing devices, and photovoltaic solar cells.

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

2011 ◽  
Vol 1287 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
Chun-Won Byun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Plastic Substrate ◽  
Inorganic Hybrid ◽  
Hybrid Type

ABSTRACTAn organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

A Scalable Millimetre-Wave Differential CMOS Cross-Coupled VCO for Automotive Radar Application

2018 ◽  
Vol 27 (10) ◽  
pp. 1850158 ◽  
Author(s):  
Rekha Yadav ◽  
Pawan Kumar Dahiya ◽  
Rajesh Mishra
Keyword(s):  
Phase Noise ◽  
Oxide Semiconductor ◽  
Control Voltage ◽  
Cmos Process ◽  
Operating Voltage ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
Millimetre Wave ◽  
The Impact ◽  
Lc Vco

In this paper, a novel method to realize LC Voltage-Controlled-Oscillator (LC-VCO) operating at 76.2–76.7[Formula: see text]GHz frequency band for microwave RFIC component is presented. The model of cross-coupled differential LC-VCO is designed in 45[Formula: see text]nm technology using Complementary Metal Oxide Semiconductor (CMOS) process for Frequency Modulated Carrier Wave (FMCW) automotive radar sensors and RF transceivers application. The impact of VDD, control voltage and temperature variation on frequency shift, phase noise, and output power has been analyzed to optimize the trade-off between frequency, phase noise, and power requirement. The results depict that LC-VCO dissipates 10.45[Formula: see text]mW power at an operating voltage of 1.5[Formula: see text]V. The phase noise has been observed to be [Formula: see text]90[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset at 76[Formula: see text]GHz carrier frequency. The estimated layout area of IC is [Formula: see text]m2. The result shows the edge of the design over existing techniques.

Electrical study of ferromagnet-oxide-semiconductor diode for a magnetic memory device integrated on silicon

2007 ◽  
Vol 90 (19) ◽  
pp. 192508 ◽  
Author(s):  
M. Kanoun ◽  
R. Benabderrahmane ◽  
C. Duluard ◽  
C. Baraduc ◽  
N. Bruyant ◽  
...  
Keyword(s):  
Memory Device ◽  
Oxide Semiconductor ◽  
Semiconductor Diode ◽  
Magnetic Memory ◽  
Electrical Study

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

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