scholarly journals Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7455
Author(s):  
Naruto Miyakawa ◽  
Ayumi Shinagawa ◽  
Yasuko Kajiwara ◽  
Shota Ushiba ◽  
Takao Ono ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Accurate Estimation ◽  
High Electron ◽  
Analyte Concentration ◽  
Spectroscopy Analysis ◽  
Electron Hole ◽  
Sensing Platforms ◽  
Pre Treatment

Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. However, the transfer curve often drifts in an electrolyte solution during measurements, making it difficult to accurately estimate the analyte concentration. One possible reason for this drift is that p-doping of GFETs is gradually countered by cations in the solution, because the cations can permeate into the polymer residue and/or between graphene and SiO2 substrates. Therefore, we propose doping sufficient cations to counter p-doping of GFETs prior to the measurements. For the pre-treatment, GFETs were immersed in a 15 mM sodium chloride aqueous solution for 25 h. The pretreated GFETs showed that the charge neutrality point (CNP) drifted by less than 3 mV during 1 h of measurement in a phosphate buffer, while the non-treated GFETs showed that the CNP was severely drifted by approximately 50 mV, demonstrating a 96% reduction of the drift by the pre-treatment. X-ray photoelectron spectroscopy analysis revealed the accumulation of sodium ions in the GFETs through pre-treatment. Our method is useful for suppressing drift, thus allowing accurate estimation of the target analyte concentration.

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility

Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

2003 ◽  
Vol 200 (1) ◽  
pp. 168-174 ◽  
Author(s):  
Narihiko Maeda ◽  
Takehiko Tawara ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi
Keyword(s):  
Electron Density ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Density ◽  
Heterostructure Field Effect Transistors

Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

2010 ◽  
Vol 645-648 ◽  
pp. 1235-1238 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
M. Bechelany ◽  
David Cornu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
High Electron ◽  
Oxide Interface ◽  
Interface Quality ◽  
Catalyst Free ◽  
Sic Nanowires ◽  
Fixed Charges ◽  
Unintentional Doping

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and electrical characterization is presented. Silvaco simulation was used to fit the I-V characteristics and to extract information about the carrier (electrons) concentration and the oxide/NW interface quality. The high trap density and fixed charges at the nanowire/oxide interface, Dit~5x1011 cm-2eV-1 and Qf ~3x1013cm-2, and the high electron concentration (~3x1019 cm-3) originating from unintentional doping severely affect the electrical conduction through the nanowires which has as a result low values of mobility and transconductance, 0.11 cm2/Vs and 7x10-10 A/V, respectively.

Novel benzo[c][1,2,5]oxadiazole-naphthalenediimide based copolymer for high-performance air-stable n-type field-effect transistors exhibiting high electron mobility of 2.43 cm2 V−1 s−1

2017 ◽  
Vol 5 (11) ◽  
pp. 2892-2898 ◽  
Author(s):  
Zhiyuan Zhao ◽  
Zhihong Yin ◽  
Huajie Chen ◽  
Yunlong Guo ◽  
Qinxin Tang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Electron ◽  
High Electron Mobility

A copolymer (PNBO) containing benzo[c][1,2,5]oxadiazole and naphthalenediimide acceptors was developed for high-performance air-stable n-type field-effect transistors with a mobility of 2.43 cm2 V−1 s−1.

scholarly journals Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

2018 ◽  
Vol 5 (1) ◽  
Author(s):  
Rabaya Basori
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Electron Hole ◽  
Metal Organic ◽  
Effect Transistor

<p class="BodyText1"><span lang="EN-IN">We report that photoresponse of </span><span lang="EN-US">a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW)</span><span lang="EN-IN"> can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on </span><span lang="EN-US">Cu:TCNQ </span><span lang="EN-IN">as a channel.</span><span lang="EN-IN">It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. </span><span lang="EN-US">Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. </span><span lang="EN-IN">The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.</span></p>

scholarly journals One-Pot Synthesis of Nitrogen-Doped TiO2 with Supported Copper Nanocrystalline for Photocatalytic Environment Purification under Household White LED Lamp

Molecules ◽  
2021 ◽  
Vol 26 (20) ◽  
pp. 6221
Author(s):  
Yixiao Pan ◽  
Yifei Wang ◽  
Shimiao Wu ◽  
Yating Chen ◽  
Xiangrong Zheng ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
White Led ◽  
Spectroscopy Analysis ◽  
Electron Hole ◽  
Absorption Properties ◽  
One Pot ◽  
Doped Tio2 ◽  
E Coli ◽  
Synthetic Strategy ◽  
Transmission Electron

Developing efficient and cheap photocatalysts that are sensitive to indoor light is promising for the practical application of photocatalysis technology. Here, N-doped TiO2 photocatalyst with loaded Cu crystalline cocatalyst is synthesized by a simple one-pot method. The structure is confirmed by transmission electron microscopy and X-ray photoelectron spectroscopy analysis, which exhibit that Cu metal nanocrystalline is uniformly deposited on the surface of N-doped TiO2 material. UV-Vis absorption spectra illustrate that the modified samples possess favorable visible light absorption properties and suppressed-electron hole separation. The as-fabricated Cu-loaded N-TiO2 materials show high activity in photocatalytic decomposing isopropanol and inactivating E. coli under the irradiation of a household white LED lamp. The developed synthetic strategy and photocatalytic materials reported here are promising for indoor environment purification.

scholarly journals Comparative Analysis of Different Figures of Merit for Algan/Gan and Si Surrounding-Gate Field Effect Transistors (SG-Fets)

2021 ◽  
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Manoj Singh Adhikari ◽  
Dharam Buddhi ◽  
Santosh Kumar Gupta
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Height ◽  
High Electron ◽  
Current Output ◽  
Dynamic Power ◽  
Figures Of Merit ◽  
Surrounding Gate ◽  
Intrinsic Gain

Abstract The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major figures of merit (FOM) including output current, output conductance (gd), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate field effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (tox), and doping concentration (Nd). The AlGaN/GaN SG-FET provides lower gd than Si for different values of CL, H, tox, and Nd as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, tox, and Nd. In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (PD). The magnitude of PD is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and tox.

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