Annealing effect of absorber layer on SnS/CdS heterojunction band alignments

2021 ◽  
Author(s):  
Ashenafi Abadi Elyas ◽  
Sai Myo Than Htay ◽  
Yoshio HASHIMOTO ◽  
Ito Kentaro ◽  
Noritaka Momose
Keyword(s):  
Thin Film ◽  
Vacuum Annealing ◽  
Hole Mobility ◽  
Annealing Effect ◽  
Band Alignment ◽  
Secondary Phases ◽  
Average Grain Size ◽  
Band Alignments ◽  
Sns Thin Films

Abstract The effect of annealing on physical properties of a SnS thin film and also on SnS/CdS heterojunction band alignment was studied. Vacuum annealing has greatly improved the crystalline quality of SnS and average grain size of 1.6 µm was achieved. Sulfur-rich secondary phases observed on the surface of as-grown SnS thin film were eliminated after vacuum annealing, resulting in a decrease of the resistivity and an increase of the carrier concentration of the film. A maximum hole mobility of 17 cm2V-1s-1 was obtained for SnS thin films annealed at 400 ֯C. A transition of SnS/CdS heterojunction from “spike” type to “cliff” type was observed when the vacuum annealed SnS thin film was post-air-annealed at 200 and 250 ֯C. The band alignment of SnS/CdS heterojunction could be adjustable between “spike” type to “cliff” type via vacuum annealing followed by post-air-annealing.

Effect of Crystallographic Quality of Grain Boundaries on Both Mechanical and Electrical Properties of Electroplated Copper Thin Film Interconnections

2011 ◽  
Author(s):  
Naokazu Murata ◽  
Naoki Saito ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Brittle Fracture ◽  
Grain Boundaries ◽  
Fracture Mode ◽  
Electron Back Scatter Diffraction ◽  
Fracture Rate ◽  
Copper Films ◽  
Average Grain Size ◽  
Electroplated Copper

Both mechanical and electronic properties of electroplated copper films used for interconnections were investigated experimentally considering the change of their micro texture caused by heat treatment. The fracture strain of the film annealed at 400°C increased from about 3% to 15% and their yield stress decreased from about 270 MPa to 90 MPa. In addition, it was found that two different fatigue fracture modes appeared in the film. One was a typical ductile fracture mode and the other was brittle one. When the brittle fracture occurred, a crack propagated along weak or porous grain boundaries which were formed during electroplating. The brittle fracture mode disappeared after the annealing at 300°C. These results clearly indicated that the mechanical properties of electroplated copper thin films vary drastically depending on their micro texture. The electrical reliability of the electroplated copper yjin film interconnections was also investigated. The interconnections used for electromigration tests were made using by a damascene process. An abrupt fracture mode due to local fusion appeared in the as-electroplated interconnections. Since the fracture rate increased almost linearly with the square of the applied current density, this fracture mode was dominated by local Joule heating. It seemed that the local current concentration occurred around the porous grain boundaries. The life of the interconnections was improved drastically after the annealing at 400°C. This was because of the increase of the average grain size and the improvement of the quality of grain boundaries in the annealed interconnections. However, the stress-induced migration occurred in the interconnections annealed at 400°C. This was because of the high tensile residual stress caused by the constraint of the densification of the films during annealing by the surrounding oxide film. Therefore, it is very important to control the crystallographic quality of electroplated copper films for improving the reliability of thin film interconnections. The quality of the grain boundaries can be evaluated by applying an EBSD (Electron Back Scatter Diffraction) analysis. New two experimentally determined parameters are proposed for evaluating the quality of grain boundaries quantitatively. It was confirmed that the crystallographic quality of grain boundaries can be evaluated quantitatively by using the two parameters, and it is possible to estimate both the strength and reliability of the interconnections.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Influence of Cd0.6Zn0.4S buffer layer on the band alignment and the performance of CZTS thin film solar cells

2021 ◽  
Vol 112 ◽  
pp. 110666
Author(s):  
Shuaihui Sun ◽  
Jie Guo ◽  
Ruiting Hao ◽  
Abuduwayiti Aierken ◽  
Bin Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Czts Thin Film

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

Diketopyrrolopyrrole-based polymer with a semi-fluorinated side chain for high-performance organic thin-film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29164-29171 ◽  
Author(s):  
Kangjian Miao ◽  
Gil Jo Chae ◽  
Xiaoxue Wu ◽  
Qinghai Shu ◽  
Xin Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Hole Mobility ◽  
Organic Thin Film Transistors ◽  
Side Chain ◽  
Organic Thin Film

A semi-fluorinated DPP based polymer showed hole mobility about 3 times higher than did its non-fluorinated analogue.

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

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