Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4K to 300K
Abstract We experimentally characterize SS of Si nMOSFETs with a substrate boron concentration of 2 × 1016 cm-3 as a function of IDS and temperatures from 4 to 300 K to verify the validity of the physical model of SS. The minimum SS are obtained around 4 mV/dec. at 4 K. The physical model including band tail states and interface states is employed to represent the experimental SS from 4 to 300 K. The impact of each parameter included in the physical model on SS behavior is examined by changing the value of the parameters in simulation. It is found that the proposed physical model can quantitatively represent experimental SS in a wide range of IDS and temperature under a given set of the parameters regarding the band tail states and the interface states. This finding indicates the validity of the present physical model and the correctness of the physical picture.