Structures and Optical Properties of Sm-Doped CuInTe2 Semiconductor

2015 ◽  
Vol 1094 ◽  
pp. 218-221
Author(s):  
Xiao Meng Nie ◽  
Yong Quan Guo

Since the rare earth based compounds have shown excellent properties such as luminescence and photo-electric transformation effect due to their 4f electronic structures. A novel Sm-doped CuIn1-xSmxTe2 semiconducting compounds have been designed and their crystal structures, microstructures and optical properties have been investigated using X-ray diffraction(XRD), scan electron microscopy (SEM), ultraviolet and visible spectrophotometer and Raman scattering. The results reveal that the doping of samarium into CuInTe2 (CIT) could stabilize the chalcopyrite structure, the lattice parameters shows fluctuation phenomenon with doping Sm in CIT. The SEM morphologies show that the grains tend to be agglomeration and form the column-like or the flake-like single crystals. The band gap Eg are corresponding to 1.25eV and 1.32eV before and after doping Sm with 0.1 mole into CuInTe2. Raman scattering analysis proves that Sm significantly adjusts the atomic vibrating models, and result in the losses of some vibrating peaks. It reveals that doping of Sm into CuInTe2 is helpful for the absorption of spectra with special frequencies.

2012 ◽  
Vol 329 ◽  
pp. 139-145
Author(s):  
S.A. Aly

A Vanadium Pentoxide Sample with a Film Thickness of 75 Nm Has Been Thermally Evaporated on Unheated Glass Substrate Using V2O5High Purity Powder. the Sample Was Subjected to a Subsequent Post-Deposition Annealing in Air at Different Temperatures for a Period of One Hour. the Optical Properties Were Studied by Transmittance and Reflectance Measurements. the Integrated Visible ,TVis, and Solar, TSol, Transmittance Were Calculated. the Spectral Behaviour of the Refractive Index as Well as the Absorption Coefficient before and after Post-Deposition Heat-Treatment Was Also Reported. X-Ray Diffraction Confirmed that the Film in the as-Deposited as Well as after Annealing up to 400 °C Is in the Amorphous State.


2008 ◽  
Vol 5 (3) ◽  
pp. 387-390
Author(s):  
Baghdad Science Journal

In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.


2020 ◽  
Vol 835 ◽  
pp. 193-199
Author(s):  
Hanan Abouarab ◽  
Amal Kassry ◽  
Iman El-Mahallawi

The deposition of composites with tailored optical properties is investigated. This would employ structures consisting of combined metallic and oxides nature. A thin layer of TiNi is obtained by using RF magnetron sputtering on a stainless-steel substrate, followed by oxidation at 400°C and 800°C for four and one hours, respectively. The optical properties of the thin films were characterized by optical spectrophotometer, and Fourier Transform Infrared Spectroscopy (FTIR). The morphology, topography, and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that TiO2 has been produced through the oxidation process of the sputter-deposited TiNi thin film at high oxidation temperature. The TiNi thin films showed a significant improvement in optical properties after oxidation, as the absorbance increased, and the emittance was reduced. This work introduces oxidized TiNi thin films as candidates for solar selective absorber.


Author(s):  
Mette Ø. Filsø ◽  
Iman Chaaban ◽  
Amer Al Shehabi ◽  
Jørgen Skibsted ◽  
Nina Lock

Two different two-dimensional thiostannates (SnS) were synthesized using tris(2-aminoethyl)amine (tren) or 1-(2-aminoethyl)piperidine (1AEP) as structure-directing agents. Both structures consist of negatively charged thiostannate layers with charge stabilizing cations sandwiched in-between. The fundamental building units are Sn3S4broken-cube clusters connected by double sulfur bridges to form polymeric (Sn3S72−)nhoneycomb hexagonal layers. The compounds are members of theR-SnS-1 family of structures, whereRindicates the type of cation. Despite consisting of identical structural units, the band gaps of the two semiconducting compounds were found to differ substantially at 2.96 eV (violet–blue light) and 3.21 eV (UV light) for tren–SnS-1 and 1AEP–SnS-1, respectively. Aiming to explain the observed differences in optical properties, the structures of the two thiostannates were investigated in detail based on combined X-ray diffraction, solid-state13C and119Sn MAS NMR spectroscopy and scanning electron microscopy studies. The compound tren–SnS-1 has a hexagonal structure consisting of planar SnS layers with regular hexagonal pores and disordered cations, whereas 1AEP–SnS-1 has an orthorhombic unit cell with ordered cations, distorted hexagonal pores and non-planar SnS layers. In the formation of 1AEP–SnS-1, an intramolecular reaction of the structure-directing piperidine takes place to form anN-heterobicyclic cation throughin situC—H activation. Hirshfeld surface analysis was used to investigate the interaction between the SnS layers and cations in 1AEP–SnS-1 and revealed that the most nucleophilic part of the SnS sheets is one of the two crystallographically distinct double sulfur bridges.


2015 ◽  
Vol 814 ◽  
pp. 44-48 ◽  
Author(s):  
Ling Huang ◽  
Hong Mei Deng ◽  
Jun He ◽  
Lei Lei Chen ◽  
Ping Xiong Yang ◽  
...  

Cu2ZnSnS4and Cu2ZnGeS4thin films made from the earth abundant and non-toxic materials are quaternary semiconducting compounds which have received increasing interest for solar cells applications. Cu2ZnSnS4and Cu2ZnGeS4thin films have been synthesized by sulfurization of radio frequency magnetron sputtered precursors. The structural and optical properties of the thin films have been investigated and discussed. The result of X-ray diffraction demonstrates that the Cu2ZnSnS4and Cu2ZnGeS4thin films have kesterite (KS; space groupI) crystal structure. An obvious blue shift is observed in the Raman spectra as smaller Ge replaces Sn. It is due to the fact that the radius of Ge cation is smaller than that of Sn cation , which results in the shrink of the lattice. Further transmission spectra demonstrate that the values of band gap for CZTS and CZGS thin films are 1.54 eV and 1.98 eV, respectively.


Author(s):  
T. Gulik-Krzywicki ◽  
M.J. Costello

Freeze-etching electron microscopy is currently one of the best methods for studying molecular organization of biological materials. Its application, however, is still limited by our imprecise knowledge about the perturbations of the original organization which may occur during quenching and fracturing of the samples and during the replication of fractured surfaces. Although it is well known that the preservation of the molecular organization of biological materials is critically dependent on the rate of freezing of the samples, little information is presently available concerning the nature and the extent of freezing-rate dependent perturbations of the original organizations. In order to obtain this information, we have developed a method based on the comparison of x-ray diffraction patterns of samples before and after freezing, prior to fracturing and replication.Our experimental set-up is shown in Fig. 1. The sample to be quenched is placed on its holder which is then mounted on a small metal holder (O) fixed on a glass capillary (p), whose position is controlled by a micromanipulator.


2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


2011 ◽  
Vol 314-316 ◽  
pp. 273-278
Author(s):  
Yu Hua Dong ◽  
Ke Ren ◽  
Qiong Zhou

Linear low density polyethylene (LLDPE) was chemically modified with grafting maleic anhydride (MAH) monomer on its backbone by melting blending. Nano-particles SiO2 was modified by cationic surfactant hexadecyl trimethyl ammonium bromide (CTAB) and anionic surfactant sulfosalicylic acid (SSA) and added to PE coating respectively. Measurement of membrane potential showed that the coating containing modified SiO2 nano-particles had characteristic of ion selectivity. The properties of the different coatings were investigated according to relative industrial standards. Experimental results indicated that PE coating with ion selectivity had better performances, such as adhesion strength, cathodic disbonding and anti-corrosion, than those of coating without ion selectivity. Crystal structure of the coatings before and after alkali corrosion was characterized by Fourier transform infrared spectra (FTIR) and X-ray diffraction (XRD). Structure of the coating without ion selectivity was damaged by NaOH alkali solution, causing mechanical properties being decreased. And the structure of the ion selective coatings was not affected.


Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.


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