Fabrication and Characterization of RF Plasma Polymerized Thin Films from 3,7-Dimethyl-1,6-octadien-3-ol for Electronic and Biomaterial Applications

2010 ◽  
Vol 123-125 ◽  
pp. 323-326 ◽  
Author(s):  
Kateryna Bazaka ◽  
Mohan V. Jacob ◽  
Robert A. Shanks
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Polymer Chains ◽  
Rf Plasma ◽  
Circuit Boards ◽  
Average Roughness ◽  
Free Surfaces ◽  
Complete Dissociation

Poly(linalool) thin films were fabricated using RF plasma polymerisation. All films were found to be smooth, defect-free surfaces with average roughness of 0.44 nm. The FTIR analysis of the polymer showed a notable reduction in –OH moiety and complete dissociation of C=C unsaturation compared to the monomer, and presence of a ketone band absent from the spectrum of the monomer. Poly(linalool) were characterised by chain branching and a large quantity of short polymer chains. Films were optically transparent, with refractive index and extinction coefficient of 1.55 and 0.001 (at 500 nm) respectively, indicating a potential application as an encapsulating (protective) coating for circuit boards. The optical band gap was calculated to be 2.82 eV, which is in the semiconducting energy gap region.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Deposition of Thin Films of Silicon Carbide on Fused Quartz and on Sapphire by Laser Ablation of Ceramic Silicon Carbide Targets

1992 ◽  
Vol 285 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
J. Hangas ◽  
E. M. Loaothetis ◽  
Nayef Abu-ageel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Fused Silica ◽  
High Resistivity ◽  
Fused Quartz ◽  
Amorphous Sic ◽  
Very High

ABSTRACTAblation of ceramic silicon carbide with 351 nm excimer radiation was used to depositSIC films on fused silica and on sapphire. For deposition temperatures above 850° C, diffraction shows the films to be crystalline with the [111] axis preferentially oriented normally to the film. Optical spectra show an indirect energy gap at 2.2 eV, near that for the cubic polytype, although the 200 diffractions are absent. Room temperature resistivities range between .02 to .1 Ωcm. Deposition below 600° C yields amorphous SiC with no diffraction bands, low and variable optical band gap and very high resistivity.

Synthesis and characterization of thin films of poly(3-methyl thiophene) by rf-plasma polymerization

2010 ◽  
Vol 64 (15) ◽  
pp. 1672-1673 ◽  
Author(s):  
G.B.V.S. Lakshmi ◽  
Anju Dhillon ◽  
D.K. Avasthi ◽  
Azher M. Siddiqui ◽  
M. Zulfequar
Keyword(s):  
Thin Films ◽  
Plasma Polymerization ◽  
Synthesis And Characterization ◽  
Rf Plasma

scholarly journals Band Gap Characterization of Thermally Treated Hybrid Blend ZnPc/CdS Thin Films

2019 ◽  
Vol 17 (43) ◽  
pp. 94-102
Author(s):  
Holya A. Alobaidy
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Band Gap ◽  
Annealing Time ◽  
Spin Coating ◽  
Energy Gap ◽  
Conductivity Measurement ◽  
Cds Thin Films ◽  
Optical Behavior

Spin coating technique used to prepare ZnPc, CdS and ZnPc/CdS blend thin films, these films annealed at 423K for 1h, 2h and 3h. Optical behavior of these films were examined using UV-Vis. and PL. The absorption spectrum of ZnPc shows a decreasing in absorption with the increase of annealing time while CdS spectrum give a clearly absorption peak at~510 nm. Energy gap of ZnPc increases from 1.41 to 1.52 eV by increasing the annealing time. Eg of CdS decrease by increasing annealing time, from 2.3 eV to 2.2 eV. The intensities of the peaks obtained from PL spectra were strongly dependent on annealing time and confirmed the results obtained from UV-Vis. D.C. conductivity measurement showed that all the thin films have two different activation energies in the temperature range 303–473K.

Optical Investigations of In2Se2.7Sb0.3 Thin Films Prepared by Thermal Evaporation Technique

2019 ◽  
Vol 969 ◽  
pp. 355-360 ◽  
Author(s):  
Piyush Patel ◽  
Vimal Patel ◽  
Sandip Vyas ◽  
Jaydev Patel ◽  
Himanshu Pavagadhi
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Radiation Detectors ◽  
Thermal Evaporation Technique ◽  
Clean Glass Substrate ◽  
Amorphous Nature ◽  
Evaporation Technique

The III-VI compound semiconductors are important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell as well as ionic batteries. In this paper, In2Se2.7Sb0.3 thin films have been grown by thermal evaporation technique onto a with chemically clean glass substrate. Amorphous nature of the films has been discovered by UV-VIS spectrophotometer. The analysis by absorption spectra within the spectral range 200nm -900 nm has been used for the optical characterization of thin films. From these data the optical constants (absorption coefficient (α), refractive index (η), extinction coefficient (k)) and optical band gap (Eg) are studied. The results were discussed, and reported in detail.

The Optical Spectra of a-Si:H and a-SiC:H Thin Films Measured by the Absolute Photothermal Deflection Spectroscopy (PDS)

2014 ◽  
Vol 213 ◽  
pp. 19-28 ◽  
Author(s):  
Zdenek Remes ◽  
Ravi Vasudevan ◽  
Karol Jarolimek ◽  
Arno H.M. Smets ◽  
Miro Zeman
Keyword(s):  
Thin Films ◽  
Spectral Range ◽  
Near Infrared ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Visible Spectral Range ◽  
Localized States ◽  
Rf Plasma ◽  
Detection Range ◽  
The Absolute

The new absolute PDS setup allows to measure simultaneously the absolute values of the optical transmittance T, reflectance R and absorptance A spectra in the spectral range 280 2000 nm with the typical spectral resolution 10 nm in ultraviolet and visible spectral range and 20 nm in the near infrared region. The PDS setup provides the dynamic detection range in the optical absorptance up to 4 orders of magnitude using non-toxic liquid perfluorohexane Fluorinert FC72. Here we demonstrate the usability of this setup on a series of intrinsic as well as doped a-Si:H and a-SiC:H thin films deposited on glass substrates by radio frequency (RF) plasma enhanced chemical vapor deposition (CVD) from hydrogen, silane and methane under various conditions. The increase of the Tauc gap with increasing carbon concentration in intrinsic a-SiC:H was observed. The defect-induced localized states in the energy gap were observed in doped a-Si:H as well as undoped a-SiC:H below the Urbach absorption edge.

scholarly journals Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optical Band Gap ◽  
Xrd Analysis ◽  
High Energy ◽  
Properties And Characterization ◽  
Different Doses

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

scholarly journals The Influence of CBD Parameters on the Energy Gap of ZnS Narcissus-Like Nanostructured Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1131
Author(s):  
Mohammed Hussein Khalil ◽  
Raghad Y. Mohammed ◽  
Mohammed Aziz Ibrahem
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Low Cost ◽  
High Yield ◽  
Nanostructured Films ◽  
Nanostructured Thin Films ◽  
Deposition Parameters ◽  
Potential Applications ◽  
Preparation Techniques

Recently, the efficient preparation techniques of zinc sulfide (ZnS) nanostructured films have drawn great attention due to their potential applications in optoelectronics. In this study, the low-cost and high-yield chemical bath deposition (CBD) technique was used to deposit ZnS nanostructured thin films. The effect of various deposition parameters such as time, pH, precursor concentration, and temperature on the morphology and energy bandgap (Eg) of the prepared thin films were investigated. The characterization of the prepared thin films revealed the formation of polycrystalline ZnS with Narcissus-like nanostructures. Moreover, the optical characterization showed inverse proportionality between both the transmission and Eg of the nanostructured thin films and the variation of the deposition parameters. A range of different Eg values between 3.92 eV with 20% transmission and 4.06 eV with 80% transmission was obtained. Tuning the Eg values and transmission of the prepared nanostructured films by manipulating the deposition parameters of such an efficient technique could lead to applications in optoelectronics such as solar cells and detectors.

scholarly journals Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6349
Author(s):  
Abel Garcia-Barrientos ◽  
Jose Luis Bernal-Ponce ◽  
Jairo Plaza-Castillo ◽  
Alberto Cuevas-Salgado ◽  
Ariosto Medina-Flores ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Optical Band Gap ◽  
Synthesis And Characterization ◽  
Force Microscopy ◽  
The Third ◽  
Atomic Force ◽  
Uv Visible ◽  
P Type

In this paper, the analysis, synthesis and characterization of thin films of a-Si:H deposited by PECVD were carried out. Three types of films were deposited: In the first series (00 process), an intrinsic a-Si:H film was doped. In the second series (A1–A5 process), n-type samples were doped, and to carry this out, a gas mixture of silane (SiH4), dihydrogen (H2) and phosphine (PH3) was used. In the third series (B1–B5 process), p-type samples were doped using a mixture of silane (SiH4), dihydrogen (H2) and diborane (B2H6). The films’ surface morphology was characterized by atomic force microscopy (AFM), while the analysis of the films was performed by scanning electron microscopy (SEM), and UV–visible ellipsometry was used to obtain the optical band gap and film thickness. According to the results of the present study, it can be concluded that the best conditions can be obtained when the flow of dopant gases (phosphine or diborane) increases, as seen in the conductivity graphs, where the films with the highest flow of dopant gas reached the highest conductivities compared to the minimum required for materials made of a-Si:H silicon for high-quality solar cells. It can be concluded from the results that the magnitude of the conductivity, which increased by several orders, represents an important result, since we could improve the efficiency of solar cells based on a-Si:H.

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