Influence of Annealing Temperature on the Structure and Electrochromic Properties of NiOx Thin Films

2011 ◽  
Vol 306-307 ◽  
pp. 372-377
Author(s):  
Gang Yin Yan ◽  
Xin Zhang ◽  
Peng Huang ◽  
Hua Ran Liu ◽  
Buo Xue Feng
Keyword(s):  
Thin Films ◽  
Cyclic Voltammetry ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Micro Structure ◽  
Electrochromic Properties ◽  
Glass Substrates ◽  
Thin Flims ◽  
The Relationship

The NiOx thin flims deposited on SnO2/glass substrates by RF sputtering were investigated through XRD、SEM、spectrophotometer and Cyclic voltammetry. The relationship between electrochromic properties and micro-structure of NiOx was also studied. Results show that NiOx films prepared by sputtering are preferred to grow along (200) direction; the crystallize size of NiOx films increases and the transmittance of colored and bleached states of NiOx films also increases with annealing temperature rising, but the transmittance different between bleached and coloured states reduces. The declined electrochromic propertiey of NiOx with the increase of annealing temperature is also found.

scholarly journals Effects of Annealing on the Structural and Optical Properties of V2O5 Thin Films Prepared by RF Sputtering for Humidity Sensor Application

2021 ◽  
pp. 3536-3544
Author(s):  
Bakr F. Hassan ◽  
Mohammed J. Dathan ◽  
Anas A. Abdallah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
V2o5 Thin Films

     In this work, vanadium pentoxide (V2O5) thin films were prepared using rf magnetron sputtering on silicon wafer and glass substrates from V2O5 target at 200 °C substrate temperature, followed by annealing at 400 and 500 °C in air for 2 h. The prepared thin films were examined by X-ray diffraction (XRD), forier transform infra-red spectroscopy (FTIR), UV-visible absorbance, and direct current coductivity to study the effects of annealing temperature on their structural and optical properties. The XRD analysis exhibited that the annealing promoted the highly crystallized V2O5 phase that is highly orientated along the c direction. The crystalline size increased from 22.5 nm to 35.4 nm with increasing the annealing temperature to 500 °C. The FTIR spectroscopy showed the enhancement of the characteristics band for the V2O5 with increasing annealing temperature to 500 °C. The optical study showed that the energy gap for the sample deposited on glass slides decreased from 2.85 eV, for as deposited sample, to 2.6 eV upon annealing the sample to 500 °C. There was a linear dependence between sensitivity and relative humidity (RH) at the range from 25% to 70%, while the behavior was exponential  at high RH range.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Structural and optical characterization of BaTiO3 thin films prepared by metal-organic deposition from barium 2-ethylhexanoate and titanium dimethoxy dineodecanoate

1994 ◽  
Vol 9 (4) ◽  
pp. 970-979 ◽  
Author(s):  
W. Ousi-Benomar ◽  
S.S. Xue ◽  
R.A. Lessard ◽  
A. Singh ◽  
Z. L. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solid State ◽  
Annealing Temperature ◽  
Barium Carbonate ◽  
Optical Characterization ◽  
Characterization Methods ◽  
Metal Organic ◽  
Metal Organic Deposition ◽  
The Relationship

Single phase BaTi03 thin films were prepared by metal-organic deposition (MOD) using barium 2-ethylhexanoate and titanium dimethoxy dineodecanoate as the metal-organic precursors. A series of experiments was conducted on the metal-organic spin-coated films and their correspondingly annealed samples by employing experimental techniques ranging from thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), and scanning electron microscopy (SEM), to various optical property characterization methods. A better understanding has been achieved regarding the metal-organic decomposition mechanism, the solid-state BaTi03 film formation and crystallization process, as well as the relationship between the structure and the optical properties of the prepared films. The conclusions of our experiments are as follows: Upon annealing the barium 2-ethylhexanoate spin-coated films, barium carbonate (BaC03) is formed at a relatively low temperature of 300 °C, and at an annealing temperature around 700 °C forms the barium peroxymonocarbonate (BaCO4). Upon annealing the titanium dimethoxy dineodecanoate spin-coated films, anatase is first formed at a low annealing temperature about 400 °C and transforms to rutile phase around an annealing temperature of 800 °C. Upon annealing the spin-coated films from the equimolar mixture of barium 2-ethylhexanoate and titanium dimethoxy dineodecanoate formulations, BaTi03 is formed around an annealing temperature of 600 °C via solid-state reaction between BaCO3 and TiO2 (anatase). The structure of MOD prepared BaTiO3 films has several specific features: instead of the columnar structure in physical vapor deposited (PVD) films, the crystal grains in granular shape are characteristic of MOD films, and the crystallites are much larger near the surface of the film than near the substrates. Optical properties of the prepared BaTi03 films have been reported. Optical characterization shows that the scattering losses contribute dominantly to the total optical losses. The relationship between the structure and the optical properties of the prepared films has also been discussed.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

2013 ◽  
Vol 734-737 ◽  
pp. 2559-2562
Author(s):  
Ying Zhen Li ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Peng Juan Liu ◽  
Qing Yun Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Antimonide ◽  
Β Phase ◽  
Bk7 Glass ◽  
Diffraction Peaks

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing.

Structural Analysis of Rf Sputtered Er Doped Ta2O5 Films

2010 ◽  
Vol 459 ◽  
pp. 32-37 ◽  
Author(s):  
Jaspal Parganram Bange ◽  
Mayank Kumar Singh ◽  
Kazusa Kano ◽  
Kenta Miura ◽  
Osamu Hanaizumi
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Structural Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Hexagonal Phase ◽  
Rf Sputtering ◽  
Amorphous Nature ◽  
Crystalline Nature ◽  
Er Doped

Thin films of Er-doped Ta2O5 have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta2O5 (orthorhombic) and δ–Ta2O5 (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.

The Effect of Pressure on the Microstructural Behavior on SnO2 Thin Films Deposited by RF Sputtering

2008 ◽  
Author(s):  
Mehmet Oguz Guler ◽  
Mirac Alaf ◽  
Deniz Gultekin ◽  
Hatem Akbulut ◽  
Ahmet Alp
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Rf Sputtering ◽  
Transparent Conductors ◽  
Grain Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Sno2 Thin Films ◽  
Steel Substrates ◽  
Gas Pressures

Tin oxide has multiple technological applications including Li-ion batteries, gas sensors, optoelectronic devices, transparent conductors and solar cells. In this study tin dioxide (SnO2) thin films were deposited on glass substrates by RF sputtering process in the oxygen (O2) and argon (Ar) plasma medium. The deposition of the thin SnO2 films was carried out by RF sputtering from SnO2 targets. Before deposition the system was evacuated to 10−4 torr vacuum level and backfilled with Ar. The deposition of the nano structured thin SnO2 films have been performed at different gas pressures. The deposition of the SnO2 was both carried out at different pure argon gas pressures and argon/oxygen mediums with varying oxygen partial pressures. The effect of argon and argon/oxygen partial gas pressures on the grain structure and film thickness were analyzed in the resultant thin films. The deposited thin films both on glass and stainless steel substrates were characterized with scanning electron microscopy (SEM), X-ray diffractometry equipped with multi purpose attachment. The grain size of the deposited layer was determined by X-ray analysis. The Atomic Force Microscopy (AFM) technique was also conducted on the some selected coatings to reveal grain structure and growth behaviors.

scholarly journals Annealing-Driven Microstructural Evolution and Its Effects on the Surface and Nanomechanical Properties of Cu-Doped NiO Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 107 ◽  
Author(s):  
San-Ho Wang ◽  
Sheng-Rui Jian ◽  
Guo-Ju Chen ◽  
Huy-Zu Cheng ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Film Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanomechanical Properties ◽  
Glass Substrates ◽  
Structural Surface ◽  
Diffraction Peaks

The effects of annealing temperature on the structural, surface morphological and nanomechanical properties of Cu-doped (Cu-10 at %) NiO thin films grown on glass substrates by radio-frequency magnetron sputtering are investigated in this study. The X-ray diffraction (XRD) results indicated that the as-deposited Cu-doped NiO (CNO) thin films predominantly consisted of highly defective (200)-oriented grains, as revealed by the broadened diffraction peaks. Progressively increasing the annealing temperature from 300 to 500 °C appeared to drive the films into a more equiaxed polycrystalline structure with enhanced film crystallinity, as manifested by the increased intensities and narrower peak widths of (111), (200) and even (220) diffraction peaks. The changes in the film microstructure appeared to result in significant effects on the surface energy, in particular the wettability of the films as revealed by the X-ray photoelectron spectroscopy and the contact angle of the water droplets on the film surface. The nanoindentation tests further revealed that both the hardness and Young’s modulus of the CNO thin films increased with the annealing temperature, suggesting that the strain state and/or grain boundaries may have played a prominent role in determining the film’s nanomechanical characterizations.

scholarly journals Deposition of Lu-Fe-O thin films on silica glass substrates by MOCVD

2020 ◽  
Vol 233 ◽  
pp. 05006
Author(s):  
A.F. Cardoso ◽  
A.A. Bassou ◽  
V.S. Amaral ◽  
J.R. Fernandes ◽  
P.B. Tavares
Keyword(s):  
Thin Films ◽  
Silica Glass ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Magnetic Measurements ◽  
Garnet Phase ◽  
Glass Substrates ◽  
Post Annealing ◽  
Post Annealing Temperature ◽  
Deposition Conditions

Thin films of the Lu-Fe-O system were deposited by aerosol assisted MOCVD on silica glass substrates. Hexagonal h-LuFeO3, garnet Lu3Fe5O12, perovskite o-LuFeO3 or hematite Fe2O3 phases were obtained, depending on the thermodynamic deposition conditions or post annealing temperature. Magnetic measurements confirm the ferromagnetic behaviour at room temperature of the thin films with garnet phase. An indirect bandgap of 1.78 eV was measured.

Effect of RF Sputtering Power on the Structural, Optical and Hydrophobic Properties of SiNx Thin Film

2011 ◽  
Vol 194-196 ◽  
pp. 2340-2346 ◽  
Author(s):  
Hong Yu Liang ◽  
Qing Nan Zhao ◽  
Feng Gao ◽  
Wen Hui Yuan ◽  
Yu Hong Dong
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Hydrophobic Properties ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Sputtering Power

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power.

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