Fractal Analysis of Morphological Image of Organic Phthalocyanine Tetrasulfonic Acid Tetrasodium (TsNiPc) Film

2014 ◽  
Vol 895 ◽  
pp. 407-410
Author(s):  
Yeo Lee Kong ◽  
S.V. Muniandy ◽  
M.S. Fakir ◽  
K. Sulaiman

Surface morphology of thin films can be efficiently characterized using power spectral density method. Spectral based parameters from surface models can then be linked to electrical conductivity of thin films used for fabricating organic photovoltaic devices. In this study, the surface morphologies of the organic thin films phthalocyanine tetrasulfonic acid tetrasodium (TsNiPc) are investigated using atomic force microscopy. The thin film samples are imaged at 40-minutes and 120-minutes after the solvent treatment. The spectral exponent β is determined from the slope of PSD log-log plot and the fractal dimension D of each film is calculated based on fractal relation β = 8 2D. The relationship between surface roughness and fractal dimension with respect to electrical properties of thin film is discussed.

2016 ◽  
Vol 30 (09) ◽  
pp. 1650145 ◽  
Author(s):  
Yunjie Zhang ◽  
Changle Chen ◽  
Jing Wang ◽  
Bingcheng Luo ◽  
Mengmeng Duan ◽  
...  

Bi4Ti3O[Formula: see text] (BIT) and Bi[Formula: see text]Nd[Formula: see text]Ti3O[Formula: see text] (BNT) thin films were deposited on Pt/Ti/SiO2/Si (100) substrates using pulsed laser deposition. The surface morphologies, ferroelectric domain structures and polarization switching were investigated by atomic force microscopy (AFM) and piezoelectric force microscopy (PFM). The phase and amplitude images of PFM show that the BIT and BNT thin films have clear domain structures. Comparison of the surface morphologies and domain structures indicates that the grain boundaries limit the shape of domain and affect the domain structure. The micro-electromechanical performance was characterized by the effective piezoelectric coefficient [Formula: see text] of the thin films. The result shows that the maximum effective [Formula: see text] value (100 pm/V) of BNT thin film is larger than that of BIT thin film (30 pm/V). This can be ascribed to BNT thin film with a preferred growth direction of [Formula: see text]-axis, resulting in effective enhancement of [Formula: see text]. Besides, all the thin films exhibit good optical transmittance in the range of 500–800 nm and the optical band gaps increase from 3.43 eV to 3.52 eV due to Nd doping.


1998 ◽  
Vol 12 (02n03) ◽  
pp. 107-113 ◽  
Author(s):  
Ning Chi ◽  
Hou Qingrun ◽  
J. Gao

The surface morphologies of pulsed laser deposited thick diamond-like carbon films were studied by optical microscopy and atomic force microscopy. The thick films had a much larger density of particulates and a much rougher surface than thin films. As a protective coating, a thin film was deposited on porous silicon. Two peaks (708 nm and 768 nm) were suppressed greatly while the peak 646 nm was not. The reason for these changes was discussed.


Author(s):  
Shunyu Chang ◽  
Yanquan Geng ◽  
Yongda Yan

AbstractAs one of the most widely used nanofabrication methods, the atomic force microscopy (AFM) tip-based nanomachining technique offers important advantages, including nanoscale manipulation accuracy, low maintenance cost, and flexible experimental operation. This technique has been applied to one-, two-, and even three-dimensional nanomachining patterns on thin films made of polymers, metals, and two-dimensional materials. These structures are widely used in the fields of nanooptics, nanoelectronics, data storage, super lubrication, and so forth. Moreover, they are believed to have a wide application in other fields, and their possible industrialization may be realized in the future. In this work, the current state of the research into the use of the AFM tip-based nanomachining method in thin-film machining is presented. First, the state of the structures machined on thin films is reviewed according to the type of thin-film materials (i.e., polymers, metals, and two-dimensional materials). Second, the related applications of tip-based nanomachining to film machining are presented. Finally, the current situation of this area and its potential development direction are discussed. This review is expected to enrich the understanding of the research status of the use of the tip-based nanomachining method in thin-film machining and ultimately broaden its application.


2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.


2010 ◽  
Vol 24 (30) ◽  
pp. 5867-5875
Author(s):  
JICHENG ZHOU ◽  
ZHENG LIU ◽  
XUQIANG ZHENG ◽  
YOUZHEN LI ◽  
DITIAN LUO

Ta–Si–N thin films and Cu/Ta–Si–N thin films were deposited on p-type Si (111) substrates by magnetron reactive sputtering. Then the films were characterized by four-point probe sheet resistance measurement, atomic force microscopy, X-ray diffraction method and scanning electron microscope, respectively. The experimental results show that the sheet resistance of Ta–Si–N thin film increases with N content. And the surface roughness of the thin film first decreases and then increases with N content. By increasing the N content, the diffusion barrier property of Ta–Si–N thin film can be improved; however, this improvement is not evident when N content beyond 56%. The as-deposited Ta–Si thin film is nano-crystalline. When doped with N, the as-deposited thin film becomes amorphous. The crystallization of Ta–Si–N thin film occurs again at high temperature. Cu atoms diffuse through grain boundaries of Ta–Si–N thin film into Si , and this leads to failure of the diffusion barrier.


2012 ◽  
Vol 576 ◽  
pp. 417-420 ◽  
Author(s):  
N.N. Hafizah ◽  
Ismail Lyly Nyl ◽  
M.Z. Musa ◽  
Mohamad Rusop Mahmood

In this study, PMMA/TiO2 nanocomposite thin films were prepared by using sonication spin coating technique. The PMMA and TiO2 solution were mixed together and sonicated for 1h to confirm the homogeneity of the sample. The thin films obtained were then measured using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and Fourier transform infrared (FTIR). FESEM micrograph reveals that the uniformity increases with the increase of TiO2 weight percentage.


Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 869 ◽  
Author(s):  
Nicolas Raab ◽  
Dirk Schmidt ◽  
Hongchu Du ◽  
Maximilian Kruth ◽  
Ulrich Simon ◽  
...  

We investigated the possibility of tuning the local switching properties of memristive crystalline SrTiO 3 thin films by inserting nanoscale defect nucleation centers. For that purpose, we employed chemically-synthesized Au nanoparticles deposited on 0.5 wt%-Nb-doped SrTiO 3 single crystal substrates as a defect formation template for the subsequent growth of SrTiO 3 . We studied in detail the resulting microstructure and the local conducting and switching properties of the SrTiO 3 thin films. We revealed that the Au nanoparticles floated to the SrTiO 3 surface during growth, leaving behind a distorted thin film region in their vicinity. By employing conductive-tip atomic force microscopy, these distorted SrTiO 3 regions are identified as sites of preferential resistive switching. These findings can be attributed to the enhanced oxygen exchange reaction at the surface in these defective regions.


2013 ◽  
Vol 481 ◽  
pp. 92-97
Author(s):  
Suntree Sangjan

This research studied ways to increase the stability of a polymer thin film with a thickness of approximately 10 nm. Our system consisted of a polystyrene (PS) thin film filled with three arm polystyrene (TAP) as additives. Formation of dewetting was investigated by atomic force microscopy and optical microscopy which showed that complete dewetting of the pure PS film occurs after being annealed at 120 oC for 5 h. The dewetting dynamics were dramatically suppressed when a small amount of TAP polymer was added into the PS thin film. We hypothesize that the nitrogen atom in the TAP polymer provides dipolarity between the polymeric thin films and the substrate followed by an increase in the interfacial interaction of the TAP/PS thin films, which in turn leads to increased film stability. However, if the concentration of TAP is too high, this leads to phase separation of the thin films. We also observed that the amount of TAP within the PS thin film largely affected the efficiency of inhibiting dewetting. This method could be utilized for the study of the mechanism in a blended polymer film.


2006 ◽  
Vol 21 (3) ◽  
pp. 547-551 ◽  
Author(s):  
Rosalía Poyato ◽  
Bryan D. Huey ◽  
Nitin P. Padture

Piezoresponse atomic-force microscopy (PFM) has been used to characterize the local piezoelectric properties of a novel, nanotube-patterned (“honeycomb”) thin film of BaTiO3 on Ti substrate synthesized hydrothermally at 200 °C. PFM amplitude and phase images, prior to the application of any direct current (dc) field, show ring-shaped piezoelectric regions that correspond to the nanostructure of this film. These results show clearly that the as-synthesized nanotube-patterned BaTiO3 thin film is piezoelectric, with a net spontaneous polarization perpendicular to the film–substrate interface. In addition, polarization switching and hysteresis were observed as a function of applied dc field, confirming that this novel fabrication procedure results in unique configurations of BaTiO3 film that are also ferroelectric.


1992 ◽  
Vol 280 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Michael J. Cima

ABSTRACTMgO thin films have been deposited on SrTiO3 and LaA1O3 substrates using both off-axis rf magnetron sputtering and electron beam evaporation techniques. The effects of substrate material, temperature, film thickness, deposition rate, sputtering gas, and pressure on the quality of the MgO films produced have been studied. Films deposited on (100) SrTiO3 at temperatures > 300°C display only the (h00) reflections in their X-ray diffraction traces, with narrow X-ray rocking curve measurements indicating that these films are epitaxial. Epitaxy has been confirmed with grazing incidence diffraction. MgO films deposited on (100) LaAlO3 are crystalline, but have varying orientations depending on the film thickness. From scanning electron microscopy, MgO films on SrTiO3 substrates appear smooth and dense while those deposited on LaAlO3 substrates possess rougher surfaces. Surface morphologies have been analyzed using atomic force microscopy.


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