Influence of the Reaction Temperature on Cd1-xZnxS Thin Films with Chemical Bath Deposited

2014 ◽  
Vol 924 ◽  
pp. 52-56
Author(s):  
Li Mei Zhou ◽  
Yue Jie Dong
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Reaction Temperature ◽  
Measurement Instrument ◽  
Cadmium Acetate ◽  
Soda Lime ◽  
Ammonia Concentration ◽  
Soda Lime Glass ◽  
Height Measurement ◽  
Acetate Aqueous Solution

Cd1-xZnxS thin films were deposited on soda-lime glass substrates with chemical-bath deposition (CBD) using cadmium acetate, zinc sulfate, thiourea, ammonia and ammonium acetate aqueous solution at different with stirring. All the samples were annealed at 200 °C for 60 min in the air. The crystal structure, surface morphology, thickness and optical properties of Cd1-xZnxS thin films with increasing ammonia concentration were studied with X-ray diffraction (XRD), scanning electron microscopy (SEM), step height measurement instrument and spectrophotometer respectively. The results revealed that Cd1-xZnxS thin films had cubic crystal structure and the intensity of the diffraction peak decreased gradually as reaction temperature rose and the average crystal size was from 7.0 nm to 8.9 nm. All of Cd1-xZnxS thin films had a granular surface with some smaller pores. The Cd1-xZnxS thin films band gap was from 2.68 eV to 2.83 eV. The transmission of film deposited at 80 °C was highest. The suitable reaction temperature was from 70 °C to 80 °C.

Preparation and Characterization of Cd1-xZnxS Thin Films with Chemical Bath Deposition

2015 ◽  
Vol 1088 ◽  
pp. 86-90
Author(s):  
Li Mei Zhou ◽  
Yun Long Li ◽  
Yue Jie Dong
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Measurement Instrument ◽  
Soda Lime ◽  
Atomic Ratio ◽  
Visible Range ◽  
Soda Lime Glass ◽  
Height Measurement ◽  
X Ray

Cd1-xZnxS thin films were grown on soda-lime glass substrates by chemical-bath deposition (CBD). The surface morphology, thickness, composition, state of the constituent elements and optical properties of the films were studied with X-ray diffraction (XRD), scanning electron microscopy (SEM), step height measurement instrument, X-ray photoelectron spectroscopy (XPS) and spectrophotometer, respectively. The affect of annealing for the Cd1-xZnxS thin films was studied. The Cd1-xZnxS thin films had cubic crystal structure and the average transmittance was 86.8% in the visible range with the optical band gap of 2.61eV and the films thickness was about 50nm. The atomic ratio of (Cd + Zn): S increased after annealing.

Effect of Heat Treatment on the Crystal Structure and Optical Band Gap of Cigs Thin Films

2011 ◽  
Vol 347-353 ◽  
pp. 94-97
Author(s):  
Lei Han ◽  
Tie Zhu Ding ◽  
Yan Lai Wang ◽  
Luo Meng Chao ◽  
Tao Shang
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Heat Treatment ◽  
Band Gap ◽  
Soda Lime ◽  
Absorption Efficiency ◽  
Treatment Temperature ◽  
Soda Lime Glass ◽  
Glass Substrates ◽  
Crystallization Conditions

The CIGS thin films were prepared on ordinary soda lime glass substrates by pulsed laser deposition (PLD). The XRD and UV-visible spectrophotometer has been determined. The influence of different heat treatment temperature on crystal structure and optical properties has been studied. The results shows that heat treatment at 450°C, the films along the (112) plane preferential grow. The thin film’s structure is integrity, the film is in best crystallization conditions, band gap is 1.35eV and the film has a high visible light absorption efficiency.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

scholarly journals Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5182
Author(s):  
Krunoslav Juraić ◽  
Davor Gracin ◽  
Matija Čulo ◽  
Željko Rapljenović ◽  
Jasper Rikkert Plaisier ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Texture Coefficient ◽  
Chemical Vapour ◽  
Visible Spectrum ◽  
Soda Lime ◽  
Fine Tuning ◽  
Soda Lime Glass ◽  
Charge Carrier Density

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO2), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 1020 cm−3 and 10–20 cm2/Vs, which are typical values for SnO2 films, and show a negligible temperature dependence from room temperature down to −269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO2 samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Optical and Electrical Analyses of Thallium Sulphide Thin Films

2021 ◽  
Vol 14 (3) ◽  
pp. 249-253
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Soda Lime ◽  
High Energy ◽  
Window Layer ◽  
Soda Lime Glass ◽  
Energy Band Gap ◽  
Thallium Chloride ◽  
Light Region ◽  
Silicon And Germanium

Abstract: In this paper, suitability of thallium sulphide films were investigated as an alternative to conventional silicon and germanium that were used as window layers in solar cells. Thin films were deposited on soda lime glass (SLG) substrates in a chemical bath containing Thallium Chloride (TlCl2) and Thiourea (NH2)2CS which was conditioned at 80 ºC for about 5 hours to deposit the films. Effects of annealing on the film samples at 300 ºC and 350 ºC were studied respectively by use of UV-VIS Avantes electrophotometer and Four-Point-Probe (FPP) machine in the light region with wavelength range from 200 nm to 1000 nm. The results obtained suggest that the thin films obtained are good materials for optoelectronics. The absorption spectra exhibited a relatively high energy band-gap. Materials of this nature are good for window layers which serve as passage to the absorber layer where needed charge carriers are produced. Keywords: Thin film, Thallium Sulphide, Window layer, Optoelectronics, Solar cells.

Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
High Performance ◽  
Annealing Temperature ◽  
Low Cost ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ito Glass

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

scholarly journals Surface microstructure, optical and electrical properties of spray pyrolyzed PbS and Zn-PbS thin films for optoelectronic applications

2017 ◽  
Vol 35 (3) ◽  
pp. 576-582 ◽  
Author(s):  
E. Adeoye Abiodun ◽  
Emmanuel Ajenifuja ◽  
A. Taleatu Bidini ◽  
D. Ogunmola Enoch ◽  
E. Omotoso ◽  
...  
Keyword(s):  
Thin Films ◽  
Interband Transition ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Chemical Spray Pyrolysis ◽  
Lead Sulphide ◽  
Average Growth ◽  
Morphological Studies

AbstractLead sulphide (PbS) and zinc- doped lead sulphide (Zn-PbS) thin films were prepared by chemical spray pyrolysis on soda lime glass substrates at a temperature of 250 °C. Precursors were prepared from chemical reagents including zinc acetate, lead acetate and thiourea. The deposited films thicknesses and elemental composition were studied by Rutherford backscattering spectroscopy (RBS); the percentages of Pb and S were estimated as 40.58 % and 59.42 %, respectively, while for the Zn-doped sample, the percentages of Zn, Pb and S were respectively 4.84 %, 44.57 % and 50.59 %. Morphological studies revealed that the films were continuous and the particles were uniformly distributed across the substrate surface. AFM probe revealed nanostructured films with particles densely distributed across the substrates surfaces with incorporation of Zn2+. Statistical distribution of the grains over a specific projected area indicated average growth height of about 47 nm. Optical studies indicated that the transmission in visible light region of Zn-PbS thin film was superior to that of the undoped sample. Interband transition of both PbS and Zn-PbS films is directly allowed and their energy band gaps were found to be 0.43 eV and 1.45 eV, respectively. Electrical characterization showed that both films are of p-type conductivity with surface resistivity values of the order of 104 Ω·cm.

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