Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

2005 ◽  
Vol 483-485 ◽  
pp. 717-720
Author(s):  
Samir Zelmat ◽  
Marie Laure Locatelli ◽  
Thierry Lebey
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dielectric Strength ◽  
Junction Temperature ◽  
Breakdown Field ◽  
Power Devices ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Different Temperatures

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer [2]. Due to their supposed high operating temperature and dielectric strength [3], spin coated polyimide materials appear as a possible candidates for SiC device passivation and insulation purposes. As a matter of fact, they are already used in current commercial SiC devices allowing a maximum junction temperature of 175 °C. The aim of this paper is to study the ability of polyimide (PI) coatings to be used for a Tjmax up to 300 °C. Therefore, the main electrical properties (dielectric permittivity, leakage current and breakdown field) at different temperatures of a high temperature commercially available polyimide material (from HD Microsystems) in both Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) structures are presented and discussed.

scholarly journals Electrical and Chemical Characterization of FIB-Deposited Insulators

1997 ◽  
Author(s):  
A. N. Campbell ◽  
D. M. Tanner ◽  
J. M. Soden ◽  
D. K. Stewart ◽  
A. Doyle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Properties ◽  
Chemical Characterization ◽  
Breakdown Field ◽  
Gate Oxides ◽  
Spectrometry Analysis ◽  
Metal Insulator Metal

Abstract The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric Si02 insulators.

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Effect of High Temperature Ageing on Active and Passive Power Devices

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000228-000235
Author(s):  
Cyril Buttay ◽  
Remi Robutel ◽  
Christian Martin ◽  
Christophe Raynaud ◽  
Simeon Dampieni ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Magnetic Materials ◽  
Power Converter ◽  
Power Devices ◽  
Active Devices ◽  
Passive Power ◽  
Temperature Ageing

The power devices needed to build a high-temperature converter (inductors, capacitors and active devices) have been stored at 200°C for up to 1000 hrs. Their characteristics have been monitored. Capacitors and magnetic materials from various manufacturers and technologies are tested, as well as silicon-carbide diodes. It is shown that by carefully choosing the components, it is possible to build a reliable power converter operating at high temperature.

Gate Stack Engineering for High Temperature Silicon Carbide CMOS ICs

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000033-000036 ◽  
Author(s):  
M.H. Weng ◽  
A.D. Murphy ◽  
D.T. Clark ◽  
D.A. Smith ◽  
R.F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Systematic Evaluation ◽  
Process Conditions ◽  
Operating Characteristics ◽  
Gate Stack ◽  
Metal Insulator ◽  
Semiconductor Interfaces

The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semiconductor interfaces to enable reliable high temperature functionality. Here we describe the effect of different process conditions for the formation of the dielectric layer on the characteristics of the resulting devices. The operating characteristics at elevated temperatures depend critically on the quality of the gate stack. Therefore a systematic evaluation of the intrinsic properties of the gate stack and data from reliability tests are needed.

scholarly journals Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

2015 ◽  
Vol 821-823 ◽  
pp. 814-817 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Dominique Tournier ◽  
Dominique Planson
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

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